JPS6123331A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6123331A
JPS6123331A JP59144704A JP14470484A JPS6123331A JP S6123331 A JPS6123331 A JP S6123331A JP 59144704 A JP59144704 A JP 59144704A JP 14470484 A JP14470484 A JP 14470484A JP S6123331 A JPS6123331 A JP S6123331A
Authority
JP
Japan
Prior art keywords
silver
ball
aluminum
wire
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59144704A
Other languages
Japanese (ja)
Inventor
Atsushi Kamijo
敦 上條
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP59144704A priority Critical patent/JPS6123331A/en
Publication of JPS6123331A publication Critical patent/JPS6123331A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05556—Shape in side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/85951—Forming additional members, e.g. for reinforcing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Abstract

PURPOSE:To provide a semiconductor device which has a low cost as well as the same reliability as prior gold wire bonding, by heat and pressure welding of a silver ball while keeping it at a higher temperature than that of the foundation. CONSTITUTION:By means of heat and pressure welding of a ball which is formed at the tip of a silver wire, an aluminium electrode on a semiconductor device and an external lead wire are connected to each other. In the course of such bonding, at a welding portion between the silver ball and an aluminium pad, aluminium is caused to react entirely with diffusing reaction so that composition variation in the alloy layer of silver and aluminium will not occur. In this case, a required temperature of the capillary or silver ball may be raised at least higher than a heated foundation temperature.

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は半導体装置の製造方法に関するものである。[Detailed description of the invention] (Industrial application field) The present invention relates to a method of manufacturing a semiconductor device.

（従来技術） トランジスタ、ＩＣなどの半導体素子上の内部電極（ア
ルミニウムパッド）と外部リードとの結線は、主に金ワ
イヤを用いるネイルヘッドボンディング、あるいはアル
ミニウムワイヤを用騒る超音波ボンディングにより行な
われている。前者は、水素炎（水素トーチ）あるいは放
電（電気トーチ）Ｋより金ワイヤの先・端部を溶融しボ
ールを形成（ボールアップ）した後熱圧着にょシ結線す
る方法である。この方法は汎用性が大きく高速ボンディ
ングが可能であるという特長をもっている。一方、後者
は、アルミニウムワイヤを超音波をかけてつぶし結線す
る方法で、ネイルヘッドボンディングのように熱を加え
る必要がなく常温で結線ができ、また、アルミニウムー
アルミニウムの接合であるために信頼性が高い。しかし
結線に際しては方向性があるために高速化が困難である
こと。(Prior art) Connections between internal electrodes (aluminum pads) on semiconductor devices such as transistors and ICs and external leads are mainly performed by nail head bonding using gold wire or ultrasonic bonding using aluminum wire. ing. The former is a method in which the tips and ends of the gold wire are melted using a hydrogen flame (hydrogen torch) or discharge (electric torch) K to form a ball (ball up), and then the wires are connected by thermocompression bonding. This method has the advantage of being highly versatile and capable of high-speed bonding. On the other hand, the latter is a method of crushing and connecting aluminum wires by applying ultrasonic waves, and unlike nail head bonding, it is not necessary to apply heat and the connections can be made at room temperature. Also, since it is an aluminum-aluminum bond, it is reliable. is high. However, it is difficult to increase the speed due to the directional nature of the wiring.

さらに、そもそもアルミニウムワイヤの引張シ強度が小
さいためにワイヤ断線が多く、製造コストが高くつくと
いう欠点を有している。以上のようなことから、通信用
の高信頼性を必要とされるような半導体装置をのぞくほ
とんどの民生用半導体装置の製造は金ワイヤによるネイ
ルヘッドボンディングにより行なわれている。Furthermore, since the tensile strength of the aluminum wire is low in the first place, wire breakage occurs frequently and manufacturing costs are high. Because of the above, most consumer semiconductor devices, except semiconductor devices for communications that require high reliability, are manufactured by nail head bonding using gold wire.

（従来技術の問題点） 近年、半導体素子の製造技術の進歩や半導体装置の組立
装置の自動化などにより、半導体装置の製造コストはま
すます安くなってきたのに対し、高価な金を用いるがゆ
えに半導体装置の原価に占める金ワイヤの割合は増大し
、原価を圧迫するようになった。この傾向は半導体素子
自体の付加価値の小さなトランジスタなどの個別半導体
において顕著であり１代替ワイヤの開発が要求されてい
る。(Problems with conventional technology) In recent years, the manufacturing cost of semiconductor devices has become lower and lower due to advances in semiconductor element manufacturing technology and automation of semiconductor device assembly equipment. The proportion of gold wire in the cost of semiconductor devices has increased, putting pressure on the cost. This tendency is remarkable in individual semiconductors such as transistors where the added value of the semiconductor element itself is small, and there is a demand for the development of an alternative wire.

電気伝導度の大きさ、ボンディングワイヤへの伸線のし
やすさ、ボンディングワイヤとしての引張り強度、ボー
ルアップのしやすさ、あるいは、ボールの圧着に重要と
なる塑性変形のしやすさなどを考えると、銀ワイヤが金
ワイヤの代替とな）うる。事実、本発明者らの発明によ
る特願昭５８−０９５１６５によれば、銀ワイヤを半導
体素子上の内部電極と外部リードの結線に用いることが
できる。すなわち、銀ワイヤと放電電極間に放電を生じ
させ、該銀ワイヤの先端部にボールを形成した後、この
銀ワイヤを用いてボンディングを行なう方法において、
上記銀ワイヤと放電電極を該銀ワイヤと放電電極を結ぶ
方向でかつ放電電極から釧ワイヤの向きに流れる保護雰
囲気ガスの気流中に配置し、該気流中で放電を生じさせ
、上記銀ワイヤの先端部をボール状に形成した後、該釧
ワイヤを用いてワイヤボンディングを行なうことを特徴
とするボンディング方法で、これによれば銀ワイヤによ
る信頼のある結線が高速で行なえるものである。Consider factors such as electrical conductivity, ease of drawing into bonding wire, tensile strength as bonding wire, ease of ball-up, and ease of plastic deformation, which is important for crimping balls. In this case, silver wire can be used as a substitute for gold wire. In fact, according to Japanese Patent Application No. 58-095165 invented by the present inventors, silver wire can be used to connect internal electrodes on a semiconductor element and external leads. That is, in a method in which a discharge is generated between a silver wire and a discharge electrode, a ball is formed at the tip of the silver wire, and then bonding is performed using this silver wire.
The silver wire and the discharge electrode are placed in an airflow of a protective atmosphere gas flowing in the direction connecting the silver wire and the discharge electrode and from the discharge electrode to the wire, and a discharge is generated in the airflow, and the silver wire is This is a bonding method characterized by forming the tip into a ball shape and then performing wire bonding using the piece wire. According to this method, reliable connection using silver wire can be made at high speed.

しかしながらこの方法により銀ワイヤをボンディングし
、樹脂刺入したのち、信頼性試験を行表ってみると、プ
レッシャークツカーテスト（ｐｒｅｓｓｕｒｅ　（：ｏ
ｏｋｅｒ　Ｔｅ５ｔ以下ＰＣＴと記す。）での累積故障
率が、第１表に示すように金ワイヤでボンディングした
場合に比較するとかｇ大きいという問題が生じた。ただ
しＰＣＴの試験条件は１．１２５℃、２．３気圧であり
、端子間抵抗が初期値より１０パーセント増大したら故
障と判定した。However, when we conducted a reliability test after bonding the silver wire and inserting the resin using this method, we found that the pressure
Oker Te5t is hereinafter referred to as PCT. ), a problem arose in that the cumulative failure rate was higher than that in the case of bonding with gold wire, as shown in Table 1. However, the PCT test conditions were 1.125°C and 2.3 atm, and a failure was determined if the resistance between the terminals increased by 10% from the initial value.

第１表 第１表で、１００時間で起こる故障は、主としてアルミ
ニウム配線の腐食によるものである。Table 1 In Table 1, failures that occur after 100 hours are mainly due to corrosion of the aluminum wiring.

本発明者は、銀ワイヤボンディング品のＰＣＴで起きた
故障原因について調べた結果、上記の故障は、銀ボール
とアルミニ、ラムパッド接合部に形成される銀とアルミ
ニウムの合金の成長が不十分であることに起因すること
をつきとめた。As a result of investigating the causes of failures that occurred in PCT of silver wire bonded products, the inventor of the present invention found that the above failures were due to insufficient growth of the silver-aluminum alloy formed at the junction of the silver ball, aluminum, and ram pad. I found out that this was caused by this.

（発明の目的） 本発明の目的は、上記故障のない低価格で信頼性の高い
半導体装置の製造方法を提供するこ、とにある。(Objective of the Invention) An object of the present invention is to provide a method for manufacturing a semiconductor device that is free from the above-mentioned failures and is inexpensive and highly reliable.

（発明の構成） 銀ワイヤを用い、銀ワイヤの先端にボールを形成しこの
ボールを熱圧着して、半導体素子上のアルミニウム電極
と外部リードの接続を行なう半導体装置の製造方法にお
いて、銀ボールとアルミニウム電極の接合部のアルミニ
ウムをすべて拡散堺応させるために、銀ボールを下地加
熱の温度より高い温度に保持しながら熱圧着を行なうこ
とを特徴とする半導体装置の製造方法である。(Structure of the Invention) In a method for manufacturing a semiconductor device in which an aluminum electrode on a semiconductor element and an external lead are connected by forming a ball at the tip of the silver wire and bonding the ball by thermocompression, the silver ball and This method of manufacturing a semiconductor device is characterized in that thermocompression bonding is carried out while holding the silver ball at a temperature higher than the base heating temperature in order to cause all of the aluminum in the joint portion of the aluminum electrode to undergo diffusion reaction.

（本発明の概要） 銀ボールとア化ミニウムパ、ド接合部に、銀とアルミニ
ウムの拡散反応によって形成される合金層の成長幅とＰ
ＣＴ故障との関連を調べるために、以下の実験を行なっ
た。下地加熱温度３５０℃、キャピラリ温度１００℃、
ボンディング荷重９０ｔの条件で、銀ワイヤによりネイ
ルへ、ドポンデイングを行なった後、適当な熱処理を行
ない、銀ボールとアルミニウムパッド接合部の合金層を
成長させ、これを樹脂刺入し、ＰＣＴ’ｅ行なった。熱
処理の条件とＰＣＴ（試験時間は、２５０時間とした）
での故障率の関係を第２表に示す。(Summary of the present invention) The growth width and P of the alloy layer formed by the diffusion reaction of silver and aluminum at the junction between the silver ball and the minium oxide
In order to investigate the relationship with CT failure, the following experiment was conducted. Substrate heating temperature 350℃, capillary temperature 100℃,
After bonding the nail with a silver wire under the condition of a bonding load of 90 tons, an appropriate heat treatment is performed to grow an alloy layer at the joint between the silver ball and the aluminum pad, this is injected with resin, and PCT'e is performed. Ta. Heat treatment conditions and PCT (test time was 250 hours)
Table 2 shows the relationship between failure rates.

第２表 故障解析のため、銀ボールとアルミニウムパッド接合部
の断面研摩を行ない仁の部分を走査型電子顕倣鏡（Ｓ　
ＥＭ　）により観察した゛ところ、ＰＣＴ故障の著しい
、熱処理を行なわなかったものは、銀とアルミニウムの
合金が腐食しているかのように見える。一方、ＰＣＴ故
障のない、２００℃４０分の熱処理を行なったものは、
アルミニウムがすべて反応しきっていたが、熱処理なし
の場合のような異常は認められなかった。合金組成の変
化のようすとＰＣＴ故障の関係をみるために、Ｘ線マイ
クロあ・ アナライザー（ＸＭＡ）により、銀（Ａｔ）Ｊよびアル
ミニウム（ＡＩ）の分布を調べた。第１図は、圧着され
た銀ボールｌとアルミニウムパッド２接合部の断面の概
略図である。３はｓｉｏ、のバッジベージ■ン、４はシ
リコンである。第１図のＡＡ’で示される線に沿って線
分析を行なった。第２図。Table 2 For failure analysis, the cross section of the silver ball and aluminum pad joint was polished and the nicked part was polished using a scanning electron microscope (S).
When observed by EM), it appears that the alloy of silver and aluminum is corroded in the case where the PCT failure is significant and the heat treatment is not performed. On the other hand, those subjected to heat treatment at 200°C for 40 minutes without PCT failure,
All of the aluminum had completely reacted, but no abnormality was observed as in the case without heat treatment. In order to examine the relationship between changes in alloy composition and PCT failure, we investigated the distribution of silver (At) and aluminum (AI) using an X-ray microanalyzer (XMA). FIG. 1 is a schematic cross-sectional view of the crimped silver ball l and aluminum pad 2 joint. 3 is the badge base of sio, and 4 is silicon. Line analysis was performed along the line indicated by AA' in FIG. Figure 2.

第３図、第４図はそれぞれ、熱処理をしなかったもの、
２００℃−５分の熱処理を行なったもの。Figures 3 and 4 are for those without heat treatment, respectively.
Heat treated at 200°C for 5 minutes.

２００℃−４０分の熱処理を行なったものの銀（Ａｙ）
およびアルミニウム（Ａりの線分析図である。縦軸は銀
あるいはアルミニウムの濃度に対応している。これらの
線分析の結果と第１表の故障率の結果およびＳＥＭによ
る観察結果をあわせて考えてみると、アルミニウムが未
反応で残シ５銀とアルミニウムの合金内の組成変化の大
きい場合にＰＣＴ故障が起き、アルミニウムが反応しき
って、銀とアルミニウムの合金層内の組成変化がない場
合には、ＰＣＴ故障は生じなりとｂうことになる。以下
実施列を用いて本発明につ込て具体的に説明する。Silver (Ay) after heat treatment at 200℃ for 40 minutes
This is a line analysis diagram of aluminum and aluminum (A). The vertical axis corresponds to the concentration of silver or aluminum. Considering the results of these line analyzes together with the failure rate results in Table 1 and the observation results by SEM. As a result, PCT failure occurs when aluminum remains unreacted and there is a large compositional change in the silver-aluminum alloy layer, and when aluminum has completely reacted and there is no compositional change in the silver-aluminum alloy layer. In this case, a PCT failure will inevitably occur.The present invention will be explained in detail below using examples.

（実施例） 上述の実験をふまえ、ボンディング時点で、欽ボールと
アルミニウムパッドの接合部で、拡散反応によってアル
ミニウムが反応しきって、銀とアルミニウムの合金層内
の組成ｉ化がな込ようにするための条件を調べた。半導
体素子すなわちシリコンチップは高温下にさらすことは
できないので、銀ボール側を高温にし、熱圧着を行なっ
た。なお銀ボールの熱酸化を防止するために、ボール形
成から熱圧着までの間は、不活性ガス雰囲気により保護
した。第５図は、本発明の詳細な説明するための概略図
である。銀ワイヤ５を挿通したキャピラリ６は、ヒータ
ー７の内部に設置され、このヒーター７によってキャピ
ラリ６の先端に形成した銀ボール８を任意の温度に加熱
できる。ヒーター７からの熱を有効に銀ボール８に伝達
させるために、ヒーター７およびキャピラリ６を支持す
るアーム９の先端部は、アルミナブロック１０で熱絶縁
されている。また、銀ボール８の熱酸化全防止するため
に、ヒーターブロック１１上のリードフレーム１２をボ
ンディング時に固定するためのリードフレームおさえ１
３から不活性ガス、具体的には、窒素ガス１４が供給さ
れる。(Example) Based on the above experiment, at the time of bonding, at the joint between the aluminum ball and the aluminum pad, the aluminum is completely reacted by diffusion reaction, and the composition i in the silver and aluminum alloy layer is smoothed out. We looked into the conditions for this. Since a semiconductor element, that is, a silicon chip, cannot be exposed to high temperatures, the silver ball side was heated to a high temperature and thermocompression bonding was performed. In order to prevent thermal oxidation of the silver ball, the period from ball formation to thermocompression bonding was protected by an inert gas atmosphere. FIG. 5 is a schematic diagram for explaining the present invention in detail. A capillary 6 through which a silver wire 5 is inserted is installed inside a heater 7, and a silver ball 8 formed at the tip of the capillary 6 can be heated to an arbitrary temperature by this heater 7. In order to effectively transfer the heat from the heater 7 to the silver ball 8, the tip of the arm 9 that supports the heater 7 and the capillary 6 is thermally insulated with an alumina block 10. In addition, in order to completely prevent thermal oxidation of the silver balls 8, a lead frame presser 1 is provided for fixing the lead frame 12 on the heater block 11 during bonding.
Inert gas, specifically nitrogen gas 14, is supplied from 3.

第５図のキャピラリ６の温度（これは、キャピラリと銀
ワイヤの熱容量を考えると銀ボールの温度とみなせる。The temperature of the capillary 6 in FIG. 5 (this can be regarded as the temperature of the silver ball considering the heat capacity of the capillary and the silver wire).

）を変えながらボンディングを行ない、銀ボールとアル
ミニウムパッド接合部での合金層の成長の様子と樹脂封
入後にＰＣＴ２５０時間行なった時の故障率を調べ、第
３表の結果を得た。なお本実施例に用−たボンダーのボ
ンディング速度は、１本あたり０６２秒、またシリコン
チップ上のアルミニウムパッドの厚さは０．８μｍで、
下地加熱温度３５０℃ボンディング荷重９０９のもとて
ボンディングを行なった。　　　７−　、第３表 第３表より、ボンディングの工程中に、銀ボールとアル
ミニウムパッドの接合部で、拡散反応によ）アルミニウ
ムをすべて反応させ、鋏とアルミニウムの合金層内の組
成変化がないようにすればＰＣＴでの故障をなくすこと
ができることがわかる。), the growth of the alloy layer at the junction between the silver ball and the aluminum pad and the failure rate when PCT was performed for 250 hours after resin encapsulation were investigated, and the results shown in Table 3 were obtained. The bonding speed of the bonder used in this example was 0.62 seconds per bonder, and the thickness of the aluminum pad on the silicon chip was 0.8 μm.
Bonding was performed at a base heating temperature of 350° C. and a bonding load of 909. 7-, Table 3 From Table 3, it can be seen that during the bonding process, all of the aluminum (by diffusion reaction) is reacted at the joint between the silver ball and the aluminum pad, and there is no change in the composition of the scissors and the aluminum alloy layer. It can be seen that if this is done, failures in PCT can be eliminated.

そして、このために必要なキャピラリ温度すなわち銀ボ
ールの温度は、少なくとも下地加熱温度より高ければよ
い。The capillary temperature required for this purpose, that is, the temperature of the silver ball, should be at least higher than the base heating temperature.

（発明の効果） 以上詳述したとおり１本発明によれば、従来の金ワイヤ
ボンディング品と同等の信頼性を有し々から、かつ低価
格の半導体装置の製造が可能となるものである。(Effects of the Invention) As described in detail above, according to the present invention, it is possible to manufacture a semiconductor device with reliability equivalent to that of conventional gold wire bonded products and at a low cost.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は、銀ボールとアルミニウムパッド接合部の断面
の概略図。第２図から第４図までは欽ボールとアルミニ
ウムパッド接合部のＸＭＡによる線分析図。第５図は１
本発明の実施例を行なうために用すたボンダーの概略図
。 １・・・熱圧着されたボール ２・・・アルミニウムパッド ３・・・二酸化シリコンのバッジベージ璽ン４・・・シ
リコン　　　　５・・・銀ワイヤ６・・・キャピラリ　
　　　７・・・ヒーター８・・・銀ボール　　　　９・
・・アーム１０・・・アルミナブロック １トヒーターブロック １２・・・リードフレーム　１３・・・リードフレーム
押工。 メプ「 亭　１　図 Ａ′ ギ　２　図 ＡＬ　　　　Ａｇ 悴　４　図FIG. 1 is a schematic cross-sectional view of the junction between the silver ball and the aluminum pad. Figures 2 to 4 are XMA line analysis diagrams of the joint between the aluminum ball and the aluminum pad. Figure 5 is 1
1 is a schematic diagram of a bonder used to carry out an embodiment of the present invention. 1... Heat-pressed ball 2... Aluminum pad 3... Silicon dioxide badge 4... Silicon 5... Silver wire 6... Capillary
7...Heater 8...Silver ball 9.
...Arm 10...Alumina block 1 Heater block 12...Lead frame 13...Lead frame pressing. Mepu' Tei 1 Figure A' Gi 2 Figure AL Ag Sae 4 Figure

Claims (1)

【特許請求の範囲】[Claims] 　銀ワイヤを用い、銀ワイヤの先端にボールを形成し、
このボールを熱圧着して、半導体素子上のアルミニウム
電極と外部リードの接続を行なう半導体装置の製造方法
において、銀ボールを下地加熱の温度より高い温度に保
持しながら熱圧着を行ない、銀ボールとアルミニウム電
極の接合部のアルミニウムをすべて拡散反応させ、銀と
アルミニウムの合金層内の組成変化をなくすことを特徴
とする半導体装置の製造方法。Using a silver wire, form a ball at the tip of the silver wire,
In a semiconductor device manufacturing method that connects an aluminum electrode on a semiconductor element to an external lead by thermocompression bonding these balls, thermocompression bonding is performed while holding the silver ball at a temperature higher than the base heating temperature. A method for manufacturing a semiconductor device, characterized by subjecting all aluminum in a joint of aluminum electrodes to a diffusion reaction to eliminate compositional changes in a silver-aluminum alloy layer.
JP59144704A 1984-07-12 1984-07-12 Manufacture of semiconductor device Pending JPS6123331A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59144704A JPS6123331A (en) 1984-07-12 1984-07-12 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59144704A JPS6123331A (en) 1984-07-12 1984-07-12 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6123331A true JPS6123331A (en) 1986-01-31

Family

ID=15368342

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59144704A Pending JPS6123331A (en) 1984-07-12 1984-07-12 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6123331A (en)

Similar Documents

Publication Publication Date Title
US4674671A (en) Thermosonic palladium lead wire bonding
US4717066A (en) Method of bonding conductors to semiconductor devices
TWI496900B (en) Copper alloy bonding wire for semiconductors
KR880008437A (en) Semiconductor device, manufacturing method thereof and wire bonding apparatus used therein
US7261230B2 (en) Wirebonding insulated wire and capillary therefor
CN107230668B (en) Structure and method for stabilizing leads in wire-bonded semiconductor devices
US6854637B2 (en) Wirebonding insulated wire
KR100275001B1 (en) How to form gold alloy wires and gold alloy bumps
JPH0817189B2 (en) Method for manufacturing semiconductor device
JPS60154537A (en) Method of producing semiconductor device
JPH03127843A (en) Semiconductor integrated circuit device
EP1367644A1 (en) Semiconductor electronic device and method of manufacturing thereof
US5124277A (en) Method of ball bonding to non-wire bonded electrodes of semiconductor devices
JPS6123331A (en) Manufacture of semiconductor device
JP3323185B2 (en) Gold wire for connecting semiconductor elements
JPS6123330A (en) Semiconductor device
JP5465874B2 (en) Copper bonding wire manufacturing method and copper bonding wire using the manufacturing method
JPS6130043A (en) Manufacture of semiconductor device
JPH03208355A (en) Semiconductor device and manufacture thereof
JP3085090B2 (en) Bonding wire
TWI508248B (en) Copper on organic solderability preservative (osp) interconnect and enhanced wire bonding process
JPS60177639A (en) Manufacture of semiconductor device
JP2515324B2 (en) Resin-sealed semiconductor device
Maneeroth et al. Enhancement of 8 Leads Small Outline Integrated Circuit Package with AuPd Coated Cu Wire Bonding for Automotive Devices
JPH0325019B2 (en)