JPS6118046Y2 - - Google Patents
Info
- Publication number
- JPS6118046Y2 JPS6118046Y2 JP14901882U JP14901882U JPS6118046Y2 JP S6118046 Y2 JPS6118046 Y2 JP S6118046Y2 JP 14901882 U JP14901882 U JP 14901882U JP 14901882 U JP14901882 U JP 14901882U JP S6118046 Y2 JPS6118046 Y2 JP S6118046Y2
- Authority
- JP
- Japan
- Prior art keywords
- melt
- seed
- pulling
- single crystal
- stirring device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 34
- 238000003756 stirring Methods 0.000 claims description 26
- 239000008393 encapsulating agent Substances 0.000 claims description 2
- 238000010899 nucleation Methods 0.000 description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 9
- 239000000565 sealant Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 239000002994 raw material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【考案の詳細な説明】
（技術分野）
本考案は周期律表の−族化合物半導体単結
晶の液体封止式引上法に関するものである。[Detailed Description of the Invention] (Technical Field) The present invention relates to a liquid-sealed pulling method for single crystal compound semiconductors of - group of the periodic table.
（背景技術）
これらの化合物半導体（例、GaAs）は成分中
に蒸気圧の高い成分（例、As）を含むため、単
結晶引上げの種付け時に、封止剤であるB2O3
が、原料（例、GaAs多結晶）融解時に発生した
上記成分（例、As）によりにごる。これはB2O3
の粘度が大きく、又B2O3上面は温度が低いた
め、Asが外へ飛び出しにくいためである。(Background technology) These compound semiconductors (e.g., GaAs) contain components with high vapor pressure (e.g., As), so B 2 O 3 , which is a sealant, is used when seeding for single crystal pulling.
However, it becomes cloudy due to the above components (e.g., As) generated when the raw material (e.g., GaAs polycrystal) is melted. This is B2O3
This is because the viscosity of B 2 O 3 is high and the temperature of the top surface of B 2 O 3 is low, making it difficult for As to jump out.
第１図は従来の単結晶引上げ装置の例を示す縦
断面図であり、ルツボ１内に、例えばGaAs（原
料）融液２が収容され、その上面にはB2O3融液
３でおおわれている。４は上記成分（As）によ
るにごりで、種結晶（シード）５およびルツボ１
を回転させるため、Asは種結晶の周りに集ま
る。 FIG. 1 is a vertical cross-sectional view showing an example of a conventional single crystal pulling apparatus. For example, a GaAs (raw material) melt 2 is contained in a crucible 1, and the upper surface is covered with a B 2 O 3 melt 3. ing. 4 is cloudy due to the above component (As), seed crystal (seed) 5 and crucible 1
As it rotates, As gathers around the seed crystal.
図のように、種結晶５をGaAs融液２に接触さ
せて種付けを行なう際、覗き窓８を通しての上か
らの観察では、にごり４のため、種結晶５の先端
の状態、すなわち結晶成長部の状態が全く観察で
きず、コントロールができないため、種付けの失
販が多く、種付けを何回か繰り返すため、単結晶
の成長に時間がかかる欠点があつた。６は引上
軸、７はシードチヤツクである。 As shown in the figure, when seeding is performed by bringing the seed crystal 5 into contact with the GaAs melt 2, observation from above through the observation window 8 reveals the state of the tip of the seed crystal 5, that is, the crystal growth area, due to cloudiness 4. Since the state of the seed cannot be observed or controlled at all, there are many lost sales of seeds, and since seeding is repeated several times, it takes a long time to grow a single crystal. 6 is a pulling shaft, and 7 is a seed chuck.
（考案の開示）
本考案は、上述の欠点を解消するため成された
もので、引上軸の下方に特殊な撹拌装置を設け
て、種結晶の周りの封止剤融液を撹拌することに
より、封止剤中のにごりを無くし、種付け時の結
晶成長部の状態を良く観察できる単結晶成長装置
を提供することが目的である。(Disclosure of the invention) The present invention was made to eliminate the above-mentioned drawbacks, and involves providing a special stirring device below the pulling shaft to stir the sealant melt around the seed crystal. Therefore, it is an object of the present invention to provide a single crystal growth apparatus that eliminates turbidity in the sealant and allows good observation of the state of the crystal growth area during seeding.
本考案は、引上軸の下方に、該軸と共に回転
し、種結晶の周りの封止剤融液を撹拌する撹拌装
置を設けたことを特徴とする単結晶引上装置であ
る。 The present invention is a single crystal pulling apparatus characterized in that a stirring device is provided below the pulling shaft and rotates together with the shaft to stir the sealant melt around the seed crystal.
本考案装置により引上げる単結晶は、例えば
GaAs，InAs，GaP，InP等の周期律表の−
族化合物半導体又はそれらの混晶より成るもので
ある。 For example, the single crystal pulled by the device of this invention is
− of the periodic table of GaAs, InAs, GaP, InP, etc.
Compound semiconductors or mixed crystals thereof.
第２図は本考案の実施例を示す縦断面図であ
る。図において第１図と同一の符号はそれぞれ同
一の部分を示す。第１図と異なる点は、シードチ
ヤツク１７の部分に撹拌装置９を取付けた点であ
る。 FIG. 2 is a longitudinal sectional view showing an embodiment of the present invention. In the figure, the same reference numerals as in FIG. 1 indicate the same parts. The difference from FIG. 1 is that a stirring device 9 is attached to the seed chuck 17.
この撹拌装置９はシードチヤツク１７に取付け
られて引上軸６と共に回転し、B2O3融液３の種
結晶５の周りの部分を撹拌するものであり、この
撹拌により融液３中のにごり４を除去する役目を
する。 The stirring device 9 is attached to the seed chuck 17 and rotates together with the pulling shaft 6 to stir the portion of the B 2 O 3 melt 3 around the seed crystal 5, and this stirring serves to remove turbidity 4 from the melt 3.
撹拌装置９は、回転撹拌中の羽根部１０を通し
て種結晶５の先端部を透視し易いように、棒状又
は線状のものより構成することが望ましい。 It is preferable that the stirring device 9 is formed into a rod-like or linear shape so that the tip of the seed crystal 5 can be easily seen through the blade portion 10 during rotational stirring.
図では、例えばモリブデン（Mo）線又は白金
線等を外側にカギ状に折曲げて羽根部１０を形成
し、根部をシードチヤツク１７に固着している。 In the figure, for example, a molybdenum (Mo) wire or a platinum wire is bent outward into a hook shape to form a wing portion 10, and the root portion is fixed to a seed chuck 17.
撹拌器の材料としてBN（窒化ボロン）を用い
ると、更に不純物による汚染が避けられる。 Using BN (boron nitride) as the material for the stirrer further avoids contamination by impurities.
第３図は本考案の他の実施例を示す側面図で、
第２図と同一の符号はそれぞれ同一の部分を示
す。図において、シードチヤツク１７′の中央部
に溝１１を設け、それにモリブデン線を巻き付け
て、両端を下方に延ばし、端末部を外側にカギ状
に折曲げて羽根部１０′を形成し、撹拌装置９′を
構成したものである。 FIG. 3 is a side view showing another embodiment of the present invention.
The same reference numerals as in FIG. 2 indicate the same parts. In the figure, a groove 11 is provided in the center of a seed chuck 17', a molybdenum wire is wound around it, both ends are extended downward, and the end portion is bent outward into a hook shape to form a blade part 10', and a stirring device 9 is formed. ′ is constructed.
なお本考案における撹拌装置は、引上軸６の下
方の他の部分に取付けても良い。 Note that the stirring device according to the present invention may be attached to other parts below the pulling shaft 6.
第２図および第３図のように構成された撹拌装
置９，９′によると、種付け時、引上軸６の回転
により種結晶５および撹拌装置９，９′を回転し
ながら、種結晶５の先端をGaAs融液２の液面に
近付けると、撹拌装置９，９′がB2O3融液３の種
結晶５の周辺部を撹拌することにより、その部分
のにごり４を形成する成分（As）が外へ飛び出
して除去されるため、にごり４が無くなつて
B2O3融液３が透明となるので、種付け時の結晶
成長部の観察が可能となる。 According to the stirring devices 9, 9' configured as shown in FIGS. 2 and 3, during seeding, the seed crystal 5 and the stirring devices 9, 9' are rotated by the rotation of the pulling shaft 6. When the tip of the B 2 O 3 melt 3 is brought close to the liquid surface of the GaAs melt 2, the stirring devices 9 and 9' stir the area around the seed crystal 5 of the B 2 O 3 melt 3, thereby removing the components forming the cloudy part 4 in that area. (As) jumps out and is removed, so turbidity 4 disappears.
Since the B 2 O 3 melt 3 becomes transparent, it becomes possible to observe the crystal growth area during seeding.
（実施例）
第３図に示す本考案による単結晶引上装置を用
い、GaAs単結晶を引上げた。撹拌装置９′の羽根
部１０′は、図に示すように、種結晶５から５mm
離し、種付け位置において、羽根部１０′の水平
部がB2O3融液３の上面から５mmの位置になるよ
うに設置した。(Example) A GaAs single crystal was pulled using the single crystal pulling apparatus according to the present invention shown in FIG. The blade part 10' of the stirring device 9' is 5 mm from the seed crystal 5, as shown in the figure.
The blade part 10' was installed so that the horizontal part of the blade part 10' was 5 mm from the upper surface of the B 2 O 3 melt 3 at the seeding position.
B2O3融液３の撹拌開始後、10〜15分でAsによ
るにごり４はほとんど無くなり、種結晶５の先端
の観察が可能となり、一回で種付けに成功した。 After 10 to 15 minutes after the start of stirring the B 2 O 3 melt 3, the cloudiness 4 due to As disappeared, and it became possible to observe the tip of the seed crystal 5, and the seeding was successful in one attempt.
（考案の効果）
以上述べたように、本考案の単結晶引上装置
は、引上軸の下方に、該軸と共に回転し、種結晶
の周りの封止剤融液を撹拌する撹拌装置を設けた
ため、撹拌装置により、種付け時、化合物（例、
GaAs）の蒸気圧の高い成分（例、As）により生
じた封止剤融液（例、B2O3）のにごり部を撹拌す
ることにより、上記成分（As）が外へ飛び出
し、にごりが無くなるので、種付け時の結晶成長
部の微妙な変化の観察が可能となるため、種付け
の失敗が減少し、従つて単結晶の歩留りが向上
し、かつ製造時間を短縮し得る利点がある。(Effects of the invention) As described above, the single crystal pulling device of the present invention has a stirring device below the pulling shaft that rotates together with the shaft and stirs the sealant melt around the seed crystal. Because of this, the stirring device allows compounds (e.g.
By stirring the cloudy part of the encapsulant melt (e.g., B 2 O 3 ) generated by a component (e.g., As) with high vapor pressure (GaAs), the component (As) will fly out and the cloudy part will be removed. This makes it possible to observe subtle changes in the crystal growth area during seeding, which reduces seeding failures, improves the yield of single crystals, and has the advantage of shortening manufacturing time.
第１図は従来の単結晶引上装置の例を示す縦断
面図である。第２図および第３図はそれぞれ本考
案の実施例を示す図で、第２図は縦断面図、第３
図は側面図である。
１……ルツボ、２……GaAs（原料）融液、３
……B2O3融液、４……にごり、５……種結晶
（シード）、６……引上軸、７……シードチヤツ
ク、８……覗き窓、９，９′……撹拌装置、１
０，１０′……羽根部、１１……溝、１７，１
７′……シードチヤツク。
FIG. 1 is a longitudinal sectional view showing an example of a conventional single crystal pulling apparatus. 2 and 3 are views showing an embodiment of the present invention, respectively.
The figure is a side view. 1... Crucible, 2... GaAs (raw material) melt, 3
... B 2 O 3 melt, 4 ... cloudy, 5 ... seed crystal (seed), 6 ... pulling shaft, 7 ... seed chuck, 8 ... viewing window, 9,9' ... stirring device, 1
0,10'...Blade part, 11...Groove, 17,1
7'... Seed chuck.
Claims (1)
の周りの封止剤融液を撹拌する撹拌装置を設け
たことを特徴とする単結晶引上装置。 (2) 撹拌装置が、線状又は棒状のものより成り、
シードチヤツクに取付けられたものである実用
新案登録請求の範囲第１項記載の単結晶引上装
置。[Claims for Utility Model Registration] (1) A single crystal pulling device characterized in that a stirring device is provided below the pulling shaft and rotates together with the pulling shaft to stir the encapsulant melt around the seed crystal. Upper device. (2) The stirring device consists of a linear or rod-shaped device,
A single crystal pulling device according to claim 1, which is attached to a seed chuck.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14901882U JPS5954572U (en) | 1982-09-29 | 1982-09-29 | Single crystal pulling device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14901882U JPS5954572U (en) | 1982-09-29 | 1982-09-29 | Single crystal pulling device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5954572U JPS5954572U (en) | 1984-04-10 |
| JPS6118046Y2 true JPS6118046Y2 (en) | 1986-06-02 |
Family
ID=30330914
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14901882U Granted JPS5954572U (en) | 1982-09-29 | 1982-09-29 | Single crystal pulling device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5954572U (en) |
-
1982
- 1982-09-29 JP JP14901882U patent/JPS5954572U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5954572U (en) | 1984-04-10 |
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