JPH061696A - Method for growing beta-barium borate single crystal - Google Patents
Method for growing beta-barium borate single crystalInfo
- Publication number
- JPH061696A JPH061696A JP15907192A JP15907192A JPH061696A JP H061696 A JPH061696 A JP H061696A JP 15907192 A JP15907192 A JP 15907192A JP 15907192 A JP15907192 A JP 15907192A JP H061696 A JPH061696 A JP H061696A
- Authority
- JP
- Japan
- Prior art keywords
- seed crystal
- beta
- crystal
- growing
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ベータバリウムボレイ
ト単結晶（β−ＢａＢ2 Ｏ4 ：以後ＢＢＯと略記する）
を種子結晶を用いて引上法で育成する方法に関する。BACKGROUND OF THE INVENTION The present invention relates to a beta barium borate single crystal (β-BaB 2 O 4 : hereinafter abbreviated as BBO).
The present invention relates to a method for growing seeds by a pulling method using seed crystals.
【従来の技術】従来、ＢＢＯを種子結晶を用いて引上法
で育成する際に用いる種子結晶は、種子結晶に必要な直
径および長さに育成した結晶をそのまま用いていた（特
願平３−２７２０４６）。2. Description of the Related Art Conventionally, as a seed crystal used for growing BBO by a pull-up method using a seed crystal, a crystal grown to have a diameter and a length required for the seed crystal was used as it is (Japanese Patent Application No. 3-311). -272046).
【０００２】[0002]
【発明が解決しようとする課題】種子結晶に必要な大き
さのＢＢＯを再現良く育成することは非常に難しかっ
た。It has been very difficult to grow BBO having a size required for seed crystals with good reproducibility.
【０００３】[0003]
【課題を解決するための手段】本発明は先を尖らせて加
工した種子結晶の表面を鏡面研磨し、融液直上に保持し
て先端部分の表面を熱処理してから育成することによ
り、容易にＢＢＯを育成する方法であり、また、先を尖
らせて加工した種子結晶の表面を鏡面研磨し、種子結晶
の先端を燐酸でエッチングしてから育成を開始すること
により、容易にＢＢＯを育成する方法である。According to the present invention, the surface of a seed crystal processed with a sharpened tip is mirror-polished, and the surface of the tip portion is heat-treated and held immediately above the melt, and then grown. Is a method for growing BBO, and the surface of the seed crystal processed with a sharpened tip is mirror-polished, and the tip of the seed crystal is etched with phosphoric acid, and then the growth is started to easily grow BBO. Is the way to do it.
【０００４】[0004]
【作用】ＢＢＯを種子結晶を用いて引上法で育成するた
めには種子結晶からの熱の逃げが大きくなければならな
い。必要な種子結晶の大きさに加工しただけでは結晶表
面からの熱の逃げが悪くまた表面の加工歪みの影響で、
融液に接触させたときにクラックが入ってしまう。その
ため種子結晶に必要な大きさに育成した、表面が平滑で
加工歪みの無い結晶をそのまま用いなければならなかっ
た。しかし先を尖らせて加工した種子結晶の表面全体を
鏡面研磨し、育成開始前に融液直上に種子結晶を保持す
ることで種子結晶表面の加工歪みが除去され、また先が
尖っていることで融液に接触させたときの熱ショックも
緩和されてクラックが入らず、β相の結晶が育成される
条件を実現することが出来る。In order to grow BBO by using the seed crystal by the pulling method, the heat escape from the seed crystal must be large. Only by processing to the required size of seed crystal, the heat escape from the crystal surface is poor and due to the processing strain on the surface,
It cracks when it comes into contact with the melt. Therefore, it has been necessary to use a crystal having a smooth surface and no processing strain, which has been grown to a size necessary for a seed crystal. However, the processing strain on the seed crystal surface is removed by mirror-polishing the entire surface of the seed crystal processed by sharpening and holding the seed crystal directly above the melt before the start of growth, and the point is also sharp. Thus, the condition that the heat shock when brought into contact with the melt is relaxed, cracks do not occur, and the β-phase crystal is grown can be realized.
【０００５】また熱燐酸でエッチングすることでも加工
歪みが除去され、前記方法と同様にβ相の結晶が育成さ
れる条件を実現することが出来る。Also, etching with hot phosphoric acid removes the processing strain, and the conditions under which β-phase crystals are grown can be realized as in the above method.
【０００６】[0006]
【実施例】長さ５０ｍｍ、直径３ｍｍに加工したＢＢＯ
の片側の先を長さ１０ｍｍだけ直径１．０ｍｍまで尖ら
せた。表面全体を鏡面研磨して種子結晶とし、育成前に
原料を融解させた融液直上に種子結晶を約５時間保持し
た。その後種子結晶を融液中に約１０ｍｍ／ｈｒで直径
が２ｍｍの部分まで下ろした。その状態で約１５分保持
した後、１ｍｍ／ｈｒで引上げを開始したところ、β相
の単結晶が育成された。[Example] BBO processed to a length of 50 mm and a diameter of 3 mm
The tip on one side was sharpened to a diameter of 1.0 mm by a length of 10 mm. The entire surface was mirror-polished to form seed crystals, and the seed crystals were held for about 5 hours directly above the melt in which the raw materials were melted before growing. After that, the seed crystal was lowered into the melt at a rate of about 10 mm / hr to a diameter of 2 mm. After holding in that state for about 15 minutes, when pulling was started at 1 mm / hr, a β-phase single crystal was grown.
【０００７】また、前記と同様に加工した種子結晶の先
端部分約１０ｍｍを熱燐酸で１８０℃、５分間エッチン
グした後、育成原料の融液に約１０ｍｍ／ｈｒで直径が
２ｍｍの部分まで下ろした。その状態で約１５分保持し
た後、１ｍｍ／ｈｒで引上げを開始したところ、β相の
単結晶が育成された。Further, about 10 mm of the tip portion of the seed crystal processed in the same manner as described above was etched with hot phosphoric acid at 180 ° C. for 5 minutes, and then dropped into the melt of the growing material at a portion of about 2 mm in diameter at about 10 mm / hr. . After holding in that state for about 15 minutes, when pulling was started at 1 mm / hr, a β-phase single crystal was grown.
【０００８】[0008]
【発明の効果】本発明によれば種子結晶を用いてＢＢＯ
を育成する際に、種子結晶にβ相が晶出する熱的条件を
実現でき、また種子結晶は再現性良く作成できるので、
ＢＢＯ育成の歩留まりが向上する。INDUSTRIAL APPLICABILITY According to the present invention, BBO using seed crystals
When growing, it is possible to realize the thermal condition that the β phase crystallizes in the seed crystal, and because the seed crystal can be created with good reproducibility,
The yield of BBO growth is improved.
Claims (2)
で育成する方法において、先を尖らせて鏡面研磨した種
子結晶を融液直上に保持し先端の表面を熱処理してから
育成を開始することを特徴とする、ベータバリウムボレ
イト単結晶の育成方法。1. A method for growing a beta barium borate single crystal by a pulling method, wherein a seed crystal having a pointed and mirror-polished surface is held directly above the melt and the surface of the tip is heat-treated before starting the growth. A method for growing a beta barium borate single crystal, which is characterized in that
で育成する方法において、先を尖らせて鏡面研磨した種
子結晶の先端を燐酸でエッチングしてから育成を開始す
ることを特徴とする、ベータバリウムボレイト単結晶の
育成方法。2. A method for growing a beta-barium borate single crystal by the pulling method, characterized in that the tip of a seed crystal having a pointed and mirror-polished surface is etched with phosphoric acid before starting the growth. Method for growing beta-barium borate single crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15907192A JP2861640B2 (en) | 1992-06-18 | 1992-06-18 | Beta barium borate single crystal growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15907192A JP2861640B2 (en) | 1992-06-18 | 1992-06-18 | Beta barium borate single crystal growth method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH061696A true JPH061696A (en) | 1994-01-11 |
| JP2861640B2 JP2861640B2 (en) | 1999-02-24 |
Family
ID=15685587
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15907192A Expired - Fee Related JP2861640B2 (en) | 1992-06-18 | 1992-06-18 | Beta barium borate single crystal growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2861640B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5456303A (en) * | 1994-02-23 | 1995-10-10 | Seiki Hanbai Co., Ltd. | Open-and-close screen door |
| US20120136370A1 (en) * | 2010-11-30 | 2012-05-31 | Olympus Corporation | Medical manipulator |
| WO2013073713A1 (en) | 2011-11-16 | 2013-05-23 | Olympus Corporation | Medical treatment tool and manipulator including the same |
-
1992
- 1992-06-18 JP JP15907192A patent/JP2861640B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5456303A (en) * | 1994-02-23 | 1995-10-10 | Seiki Hanbai Co., Ltd. | Open-and-close screen door |
| US20120136370A1 (en) * | 2010-11-30 | 2012-05-31 | Olympus Corporation | Medical manipulator |
| WO2013073713A1 (en) | 2011-11-16 | 2013-05-23 | Olympus Corporation | Medical treatment tool and manipulator including the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2861640B2 (en) | 1999-02-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19981110 |
|
| LAPS | Cancellation because of no payment of annual fees |