JPS6117488A - 化合物半導体単結晶の製造方法 - Google Patents
化合物半導体単結晶の製造方法Info
- Publication number
- JPS6117488A JPS6117488A JP13772784A JP13772784A JPS6117488A JP S6117488 A JPS6117488 A JP S6117488A JP 13772784 A JP13772784 A JP 13772784A JP 13772784 A JP13772784 A JP 13772784A JP S6117488 A JPS6117488 A JP S6117488A
- Authority
- JP
- Japan
- Prior art keywords
- reaction vessel
- single crystal
- semi
- compound semiconductor
- cooling body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims description 31
- 150000001875 compounds Chemical class 0.000 title claims description 25
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000001816 cooling Methods 0.000 claims description 21
- 238000006243 chemical reaction Methods 0.000 claims description 14
- 238000010494 dissociation reaction Methods 0.000 claims description 3
- 230000005593 dissociations Effects 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 9
- 238000009826 distribution Methods 0.000 description 7
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 239000000155 melt Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 235000006732 Torreya nucifera Nutrition 0.000 description 1
- 244000111306 Torreya nucifera Species 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13772784A JPS6117488A (ja) | 1984-07-03 | 1984-07-03 | 化合物半導体単結晶の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13772784A JPS6117488A (ja) | 1984-07-03 | 1984-07-03 | 化合物半導体単結晶の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6117488A true JPS6117488A (ja) | 1986-01-25 |
JPH0321513B2 JPH0321513B2 (enrdf_load_stackoverflow) | 1991-03-22 |
Family
ID=15205413
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13772784A Granted JPS6117488A (ja) | 1984-07-03 | 1984-07-03 | 化合物半導体単結晶の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6117488A (enrdf_load_stackoverflow) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5632272A (en) * | 1979-08-22 | 1981-04-01 | Nat Marine Plastic | Transporting bag |
JPS59217692A (ja) * | 1983-05-25 | 1984-12-07 | Rikagaku Kenkyusho | 薄膜単結晶の製造方法 |
-
1984
- 1984-07-03 JP JP13772784A patent/JPS6117488A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5632272A (en) * | 1979-08-22 | 1981-04-01 | Nat Marine Plastic | Transporting bag |
JPS59217692A (ja) * | 1983-05-25 | 1984-12-07 | Rikagaku Kenkyusho | 薄膜単結晶の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0321513B2 (enrdf_load_stackoverflow) | 1991-03-22 |
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