JPS61174211U - - Google Patents

Info

Publication number
JPS61174211U
JPS61174211U JP5775985U JP5775985U JPS61174211U JP S61174211 U JPS61174211 U JP S61174211U JP 5775985 U JP5775985 U JP 5775985U JP 5775985 U JP5775985 U JP 5775985U JP S61174211 U JPS61174211 U JP S61174211U
Authority
JP
Japan
Prior art keywords
transistor
mute
low frequency
bias voltage
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5775985U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP5775985U priority Critical patent/JPS61174211U/ja
Publication of JPS61174211U publication Critical patent/JPS61174211U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Amplifiers (AREA)

Description

【図面の簡単な説明】
第1図はこの考案の低周波増幅回路の一実施例
の結線図である。 D1,D2……バイアス電圧設定用第1、第2
ダイオード、Q3……第3トランジスタ。

Claims (1)

    【実用新案登録請求の範囲】
  1. ミユート機能を具備した低周波増幅回路におい
    て、バイアス電圧設定部の両端にトランジスタの
    エミツタ及びコレクタを接続するとともに、該ト
    ランジスタのベースに、ミユート信号を印可する
    ようにしたことを特徴とする低周波増幅回路。
JP5775985U 1985-04-17 1985-04-17 Pending JPS61174211U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5775985U JPS61174211U (ja) 1985-04-17 1985-04-17

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5775985U JPS61174211U (ja) 1985-04-17 1985-04-17

Publications (1)

Publication Number Publication Date
JPS61174211U true JPS61174211U (ja) 1986-10-30

Family

ID=30582593

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5775985U Pending JPS61174211U (ja) 1985-04-17 1985-04-17

Country Status (1)

Country Link
JP (1) JPS61174211U (ja)

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