JPS6117298A - Test method of large-scale integrated circuit - Google Patents

Test method of large-scale integrated circuit

Info

Publication number
JPS6117298A
JPS6117298A JP59138301A JP13830184A JPS6117298A JP S6117298 A JPS6117298 A JP S6117298A JP 59138301 A JP59138301 A JP 59138301A JP 13830184 A JP13830184 A JP 13830184A JP S6117298 A JPS6117298 A JP S6117298A
Authority
JP
Japan
Prior art keywords
ram
rom
address
data
test
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59138301A
Other languages
Japanese (ja)
Inventor
Akinobu Minagawa
明信 皆川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP59138301A priority Critical patent/JPS6117298A/en
Publication of JPS6117298A publication Critical patent/JPS6117298A/en
Pending legal-status Critical Current

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  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

PURPOSE:To shorten a testing time of a large-scale integrated circuit and to reduce a test cost by testing simultaneously an ROM and RAM. CONSTITUTION:An integrated circuit is set to an test mode by a ROM/RAM test mode specifying means 16. An ROM address specifying means 12 specifies an address by one step from zero address and transfers ROM data to an RAM through a data bus. As soon as the overall bit writing to the RAM is terminated, an RAM address specifying means 14 starts again at zero address to read data. The ROM address specifying means 12 re-starts at the moment all the RAM data is completely outputted, begins the specifying the address next to that at the stopping. Said procedure is repeated until all data in the ROM is transferred to the RAM. Thus testing of the ROM and RAM can be executed simultaneously.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、ROM、RAMを1チップ半導体基板内に備
えた大規模集積回路の従来のテスト方法の欠点を除去し
、効率良くデバイステストを実施するテスト方法に関す
るものである。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention eliminates the drawbacks of conventional testing methods for large-scale integrated circuits that include ROM and RAM in one chip semiconductor substrate, and efficiently performs device tests. It concerns testing methods.

従来例の構成とその問題点 近年、大規模集積回路は、1チツプ内にデジタル・アナ
ログ変換器、CPU、タイマー回路、液晶や螢光表示管
の駆動回路を組み込んで、多機能となシ複雑になってき
た。1チツプマイクロコンピユータなどには、上述の回
路等に加えて、大容量のROMやRAMが備えられ、特
にRAMの大容量化が図られている。
Conventional configurations and their problems In recent years, large-scale integrated circuits have become multi-functional and complex, incorporating digital-to-analog converters, CPUs, timer circuits, liquid crystal and fluorescent display tube drive circuits into one chip. It has become. One-chip microcomputers and the like are equipped with large-capacity ROMs and RAMs in addition to the above-mentioned circuits, and in particular, efforts are being made to increase the capacity of RAMs.

以下に従来の1チツプ内に備えられたROMとRAMの
ビット落ち確認テストの方法について説明する。
A conventional method of testing to confirm bit loss in ROM and RAM provided in one chip will be described below.

第1図は従来のROMのビット落ち確認テスト手段のブ
ロック図の一例である。1はROM、2はROMのア)
゛レス指定手段で、カウンター回路、やラッチなどで構
成されている。3は周辺端子、4はテスト信号発生手段
である。
FIG. 1 is an example of a block diagram of a conventional ROM bit loss confirmation test means. 1 is ROM, 2 is ROM a)
It is a means for specifying a response, and consists of a counter circuit, a latch, etc. 3 is a peripheral terminal, and 4 is a test signal generating means.

以上のように構成された従来のROMテスト手段で実施
するROMのビット落ち確認テスト方法について、以下
その動作を説明する。
The operation of the ROM bit loss confirmation test method performed by the conventional ROM test means configured as described above will be described below.

まず、テスト手段4によって、集積回路をROM−1の
テストモードに設定する。この時、ROMアドレス指定
手段2は、0番地指定からスタートし、1番地づつ順次
アドレス指定するモードとなっていて、ROMのアドレ
スを0番地から最終番地まで指定してゆく。指定された
アドレスのROMデータは、周辺端子3へ出力され、L
SIテスターによってビット落ちのテストが実施される
First, the test means 4 sets the integrated circuit to the ROM-1 test mode. At this time, the ROM address designating means 2 is in a mode that starts from designating address 0 and sequentially designates addresses one by one, and designates the ROM address from address 0 to the final address. The ROM data at the specified address is output to the peripheral terminal 3, and the L
A bit drop test is performed by an SI tester.

第2図はRAMのビット落ち確認テスト手段のブロック
図の一例である。6はRAM、6はテスト手段、7は周
辺端子、8はRAMへのデータ書き込み信号経路、9は
RAMデータ読み出し信号経路である。
FIG. 2 is an example of a block diagram of a RAM bit loss confirmation test means. 6 is a RAM, 6 is a test means, 7 is a peripheral terminal, 8 is a data write signal path to the RAM, and 9 is a RAM data read signal path.

以上のように構成された従来のRAMテスト手段で実施
するRAMのビット落ち確認テスト方法について以下そ
の動作を説明する。
The operation of the RAM bit loss confirmation test method performed by the conventional RAM test means configured as described above will be described below.

まず、テスト手段6によってRAMテストモードに設定
する。この時、RAMへのデータ書き込み信号、RAM
データ読み出し信号は任意に発生させることができる。
First, the test means 6 sets the RAM test mode. At this time, the data write signal to the RAM,
The data read signal can be generated arbitrarily.

またRAMのアドレス指定も周辺端子7よシ、任意に設
定できる。周辺端子7からRAMのアドレスデータと書
き込みデータとをそれぞれRAMに転送し、経路8の書
き込み信号によって指定アドレスに全エリアデータを書
き込む。書き込み終了後、経路9の読み出し信号によっ
て、周辺端子7へRAMデータを転送し、出力してRA
Mのビット落ち確認テストをLSIテスターによって実
施する。
Further, RAM address designation can also be set arbitrarily from the peripheral terminal 7. The address data and write data of the RAM are transferred from the peripheral terminal 7 to the RAM, respectively, and the entire area data is written to the specified address by the write signal on the path 8. After writing is completed, the read signal on path 9 transfers the RAM data to peripheral terminal 7 and outputs it to RAM.
A bit loss confirmation test for M is performed using an LSI tester.

しかしながらROMとRAMとが同一チップ内にあシ、
また、データ転送用のデータバスを共有している場合が
多いため、上記のようなテスト方法では、ROM、RA
Mのテストを各々単独で実施しなければならない。RO
MとRAMの容量が大きくなればなるほど、テスト時間
が長くかかるという問題を有−してへた。
However, if ROM and RAM are on the same chip,
In addition, since the data bus for data transfer is often shared, the test method described above
Each of the M tests must be performed independently. R.O.
The problem arises that the larger the capacity of M and the RAM, the longer the test time.

発明の目的 本発明は上記従来の問題点を解消するためのもので、R
OMとRAMとを1チツプ内に備えた大規模集積回路を
効率良くテストし、テスト時間を短縮することを提供す
るものである。
Purpose of the Invention The present invention is intended to solve the above-mentioned conventional problems.
It is an object of the present invention to efficiently test a large-scale integrated circuit including an OM and a RAM in one chip, and to shorten test time.

発明の構成 本発明はROMテスト手段とRAMテスト手段とを備え
た集積回路のテスト方法であシ、2つのメモリテストを
同時に実施することにヨシ、テスト時間を短縮すること
ができるものである。
DESCRIPTION OF THE INVENTION The present invention is a method for testing an integrated circuit that includes a ROM test means and a RAM test means, and allows two memory tests to be performed simultaneously, thereby reducing the test time.

実施例の説明 第3図は本発明の実施例におけるROMとRAM同時テ
スト手段のブロック図を示すものである。
DESCRIPTION OF THE EMBODIMENT FIG. 3 shows a block diagram of a ROM and RAM simultaneous test means in an embodiment of the present invention.

第3図ニオイテ、11 はROM、12iROM7ドレ
ス指定手段、13はRAM114はRAMアドレス指定
手段、15はROMアドレス指定禁止手段、16はRO
M、RAMテストモード指定手段、17は周辺端子、1
8はRAM書き込み信号線、19はRAM読み出し信号
線である。
3. 11 is ROM, 12 iROM7 address designation means, 13 is RAM 114 is RAM address designation means, 15 is ROM address designation prohibition means, 16 is RO
M, RAM test mode designation means, 17 peripheral terminals, 1
8 is a RAM write signal line, and 19 is a RAM read signal line.

以上のように構成された本実施例のROM。The ROM of this embodiment is configured as described above.

RAM同時テスト方法について、以下第3図のブロック
図にもとづいてその動作を説明する。
The operation of the RAM simultaneous test method will be explained below based on the block diagram of FIG.

まず、ROM、RAMテストモード指定手段16によっ
て、集積回路をテストモードに設定する。
First, the integrated circuit is set to a test mode by the ROM/RAM test mode specifying means 16.

ROMアドレス指定回路12は、0番地よ、!71ステ
ップづつアドレス指定を行ない、ROMデータをデータ
バスでRAMへと転送する010Mデータ出力に同期し
てRAMアドレス指定手段14が作動し、同時に信号a
18のRAM書き込み信号が発生して、ROMデータが
RAMの0番地から順に書き込まれてゆく。RAMの最
終アドレスまでROMデータが書き込まれると、ROM
アドレス指定禁□止手段16によってROMアドレス指
定を一時禁止する。ROMアドレス指定手段12は前の
状態を維持したままストップし、すべてのRAMデータ
が出力されるまで待ち状態となって”いる。RAMアド
レス指定手段14はRAMに全ビット書き込みが終了す
ると同時に読み出しのため、再び0番地からスタートす
る。すべてのRAMデータが出力が終了すると同時にR
OMアドレス指定手段12は再スタートシ、停止した時
の次のアドレスから指定しはじめ、以上の動作をROM
の全データがRAMに転送されるまで繰り返すことによ
4Q、ROM、RAMのテストを同時に実施することが
できる。
ROM addressing circuit 12 is at address 0! The RAM address designating means 14 operates in synchronization with the 010M data output, which performs addressing in 71 steps and transfers the ROM data to the RAM via the data bus, and at the same time the signal a
18 RAM write signals are generated, and ROM data is sequentially written from address 0 of the RAM. When the ROM data is written to the final address of RAM, the ROM
ROM address specification is temporarily prohibited by the address specification prohibition means 16. The ROM addressing means 12 stops while maintaining the previous state and is in a waiting state until all the RAM data is output.The RAM addressing means 14 starts reading the data at the same time as all bits have been written to the RAM. Therefore, it starts again from address 0. At the same time as all RAM data is finished outputting, it starts from address 0.
The OM address specifying means 12 starts specifying from the next address when restarting or stopping, and performs the above operations in the ROM.
4Q, ROM, and RAM can be tested at the same time by repeating the test until all data is transferred to RAM.

発明の効果 本発明によれば、ROMとRAMを同時にテストするこ
とによって大規模集積回路のテスト時間を短縮し、テス
トコストを低減でき、RAMの容  積置が大きくなれ
ばなるほどこの効果が大きくなるとい5優れた大規模集
積回路のテスト方法を実現できる。
Effects of the Invention According to the present invention, testing time for large-scale integrated circuits can be shortened and test costs can be reduced by testing ROM and RAM at the same time, and this effect becomes greater as the RAM capacity increases. 5. An excellent method for testing large-scale integrated circuits can be realized.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のROMテスト手段のブロック図、第2図
は従来のRAMテスト手段のブロック図、第3図は本発
明による実施例のROM、RAM同時テスト手段のブロ
ック図である。 11・・・・・・ROM、12・・・・・・ROMアド
レス指定手段、13・・・・・・RAM、 14・・・
・・・RAMアドレス  5指定手段、16・・・・・
・ROMアドレス指定禁止手段、16・・・・・・RO
M/RAMテストモード指定手段、17・・・・・・周
辺端子、18・・・・・・RAM書き込み信号、1e・
・・・・・RAM読み出し信号。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名31
図 イ @ 2 図
FIG. 1 is a block diagram of a conventional ROM test means, FIG. 2 is a block diagram of a conventional RAM test means, and FIG. 3 is a block diagram of a ROM and RAM simultaneous test means according to an embodiment of the present invention. 11...ROM, 12...ROM address designation means, 13...RAM, 14...
...RAM address 5 specifying means, 16...
・ROM address specification prohibition means, 16...RO
M/RAM test mode specifying means, 17... peripheral terminal, 18... RAM write signal, 1e.
...RAM read signal. Name of agent: Patent attorney Toshio Nakao and 1 other person31
Figure I @ 2 Figure

Claims (1)

【特許請求の範囲】[Claims]  リードオンリーメモリ(ROM)とランダムアクセス
メモリ(RAM)を1チップ半導体基板内に備えた大規
模集積回路内に、ROMデータとRAMデータの読み出
し、RAMへのデータ書き込みが任意にできるテスト回
路を備え、前記ROMデータとRAMデータのビット落
ちテストを同時に実施することを特徴とする大規模集積
回路のテスト方法。
A large-scale integrated circuit with read-only memory (ROM) and random access memory (RAM) on a single chip semiconductor substrate includes a test circuit that can read ROM data and RAM data, and write data to RAM at will. . A method for testing a large-scale integrated circuit, characterized in that a bit loss test of the ROM data and RAM data is performed simultaneously.
JP59138301A 1984-07-03 1984-07-03 Test method of large-scale integrated circuit Pending JPS6117298A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59138301A JPS6117298A (en) 1984-07-03 1984-07-03 Test method of large-scale integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59138301A JPS6117298A (en) 1984-07-03 1984-07-03 Test method of large-scale integrated circuit

Publications (1)

Publication Number Publication Date
JPS6117298A true JPS6117298A (en) 1986-01-25

Family

ID=15218673

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59138301A Pending JPS6117298A (en) 1984-07-03 1984-07-03 Test method of large-scale integrated circuit

Country Status (1)

Country Link
JP (1) JPS6117298A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6443900A (en) * 1987-08-10 1989-02-16 Nec Corp Semiconductor integrated circuit
WO1998016933A1 (en) * 1996-10-15 1998-04-23 Advantest Corporation Memory tester and method of switching the tester to ram test mode and rom test mode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6443900A (en) * 1987-08-10 1989-02-16 Nec Corp Semiconductor integrated circuit
WO1998016933A1 (en) * 1996-10-15 1998-04-23 Advantest Corporation Memory tester and method of switching the tester to ram test mode and rom test mode

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