JPS61168949A - ワイヤボンデイング方法 - Google Patents

ワイヤボンデイング方法

Info

Publication number
JPS61168949A
JPS61168949A JP60008375A JP837585A JPS61168949A JP S61168949 A JPS61168949 A JP S61168949A JP 60008375 A JP60008375 A JP 60008375A JP 837585 A JP837585 A JP 837585A JP S61168949 A JPS61168949 A JP S61168949A
Authority
JP
Japan
Prior art keywords
wire
bonding
bonding pad
silane
pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60008375A
Other languages
English (en)
Inventor
Masayoshi Yamaguchi
政義 山口
Takao Watanabe
隆夫 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60008375A priority Critical patent/JPS61168949A/ja
Publication of JPS61168949A publication Critical patent/JPS61168949A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/45691—The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
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    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔発明め分野〕 この発明はワイヤボンディング方法に関する。
〔技術的背景およびその問題点〕
ワイヤボンディングは周知の通り半導体素子のボンディ
ングパッドと他のボンディングパッド間をワイヤ接続す
るものである。近時、ワイヤボンディングは全自動ワイ
ヤボンディング装置の発達に伴ない高速でリードフレー
ムとＩＣチップ間のワイヤボンディング印刷回路基板と
ＩＣチップ間のワイヤボンディングが行なわれて贋るっ
これらのワイヤボンディングに用いるワイヤは被覆のな
い全線が実用されているうしかしながら、高速化が要望
されるにつれて、ボンディングされたワイヤがたわんだ
り、その九わみによシ他の回路に接触したシするなどの
問題があった。特にワイヤボンディング後モールドする
と、この接触によるシ璽−トの不良が多くなる問題があ
った。この問題を解決する手段として被覆ワイヤを用い
ることが特開昭５８−３２３９号、特開昭５９−１５４
０５４号で提案されている。
しかしながら、これらの手段はワイヤの被覆材にポリエ
チレン、ポリエステル、ポリプロピレン、ポリイミドな
どの電気絶縁性の被覆を用いているため、ワイヤボンデ
ィング後の加熱工程例えばモールドエ穆罠より被覆が溶
融して絶縁破壊されるなどの問題があった。
〔発明の目的〕
この発明は上記点に鑑みなされたもので、ワイヤボンデ
ィングの加熱工種に対しても安定な信頼性のあるワイヤ
ボンディング方法を提供するものであろう 〔発明の概要〕 この発明は、無機絶縁材で被覆されたワイヤを用いて半
導体素子のボンディングパッドと他のボンディングパッ
ド間をワイヤボンディングするワイヤボンディング方法
を得るものである。
〔発明の実施例〕
次に本発明ボンディング方法の実施例を図面を参照して
説明する。
ワイヤボンディング装置は当業者において周知であるか
らその説明を略す。このワイヤボンディング装置を用い
て例えば印刷回路基板（す上にダイボンダによシボンデ
ィングされた半導体チップ（２）のワイヤボンディング
された状態を図に示す０このワイヤボンディングに用い
るワイヤは無機絶縁材で被覆されたワイヤを用いる。こ
の無機絶縁材として例えばシランを用いる。すなわちワ
イヤである導電体例えば金線（３）上にシラン（８ｉＨ
４）被覆（４）を設ける。このシラン被覆（４）は例え
ばシランガス雰囲気中でプラズマ放電を生起させ、この
プラズマ雰囲慨中に金線（３）を設けることにより、金
線（３）の表面と接触したシランが金線（３）の表面に
付着する。この時、金線（３）は回転させながら走行さ
せるとさらに良好な一様に被覆されたワイヤを得ること
ができる。このようにシラン被覆（４）され九ワイヤを
用いて半導体素子例えば半導体チップのボンディングパ
ッドと他のボンディングパッド例えば印刷回路基板のボ
ンディングパッド間をワイヤボンディングする。
このワイヤボンディングはポールボンディングテモ、ウ
ェッジボンディングでも適宜選択できる。
しかし、ウェッジボンディングにより表面のシラン被覆
（４１をこすり破ると共に圧接することによシボンディ
ングすることが好適である。
このようにシラン被覆（４）のワイヤを用いてワイヤボ
ンディングすることにより、従来ワイヤをループを抽い
て配線していたのを、印刷回路基板（１）表面、半導体
チップ（２）表面を沿わせて配線することができる。こ
のようにワイヤボンディングしたのちモールド（５）す
るととくより、モールド時の高温に対しても無機絶縁材
被覆は安定である０さらに配線が表面に沿っているので
、モールド材の固着時や、モールド材の混入時の断線を
改善できるばかりでなく、−配線単位に要するワイヤの
長さも短縮化することができる０ さらに表面を無機絶縁材で被覆したワイヤを用いるので
、無機絶縁被覆によシ強度を保護でき、従来より細い金
線を用いることができる。このように細い金線を利用で
きることはワイヤボンディング仕易い特徴がある。
さらにまた表面を無機絶縁材で被覆したワイヤを用いる
ので、全代替ワイヤ例えば常温よシ高温で酸化しやすい
銅、アルミニウムなどのワイヤを用いたワイヤボンディ
ングに適用して極めて有益である。これは全代替ワイヤ
ボンディングにおいてＨ＃＃＆ボンデｌング性を得るの
く、ボンディング面を予め加熱されるが、この熱による
酸化を防止できる効果があるう さらにまた、無機絶縁材はモールド時溶解もしくは蒸発
しない様に１５０℃以上の耐熱、耐燃焼性のあるものを
用いることが好適である。
〔発明の効果〕
この発明方法によれば半導体素子製造工程による熱く対
して安定な無機絶縁材で被覆されたワイヤによるワイヤ
ボンディングを実行できるので、り嘗−トなどによる不
良を改善できる効果がある。
【図面の簡単な説明】
図は本発明方法の実施例を説明するための半導体装置の
断面図である。 ｌ・・・印刷回路基板、　２・・・半導体チップ。 ３・・・金　線、　　４・・・無機絶縁材による被覆。

Claims (3)

    【特許請求の範囲】
  1. （１）無機絶縁材で被覆されたワイヤを用いて半導体素
    子のボンディングパッドと他のボンディングパッド間を
    ワイヤボンディングすることを特徴とするワイヤボンデ
    ィング方法。
  2. （２）ワイヤの無機絶縁被覆材はシランである特許請求
    の範囲第１項記載のワイヤボンディング方法。
  3. （３）無機絶縁材はモールド時溶解もしくは蒸発しない
    様に１５０℃以上の耐熱、耐燃焼性である特許請求の範
    囲第１項記載のワイヤボンディング方法。
JP60008375A 1985-01-22 1985-01-22 ワイヤボンデイング方法 Pending JPS61168949A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60008375A JPS61168949A (ja) 1985-01-22 1985-01-22 ワイヤボンデイング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60008375A JPS61168949A (ja) 1985-01-22 1985-01-22 ワイヤボンデイング方法

Publications (1)

Publication Number Publication Date
JPS61168949A true JPS61168949A (ja) 1986-07-30

Family

ID=11691480

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60008375A Pending JPS61168949A (ja) 1985-01-22 1985-01-22 ワイヤボンデイング方法

Country Status (1)

Country Link
JP (1) JPS61168949A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01167040U (ja) * 1988-05-16 1989-11-22
JPH0370147A (ja) * 1989-08-09 1991-03-26 Nippon Steel Corp 半導体用絶縁被覆ボンディング細線

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01167040U (ja) * 1988-05-16 1989-11-22
JPH0370147A (ja) * 1989-08-09 1991-03-26 Nippon Steel Corp 半導体用絶縁被覆ボンディング細線

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