JPS61168922A - プラズマ・エツチング装置 - Google Patents
プラズマ・エツチング装置Info
- Publication number
- JPS61168922A JPS61168922A JP22793885A JP22793885A JPS61168922A JP S61168922 A JPS61168922 A JP S61168922A JP 22793885 A JP22793885 A JP 22793885A JP 22793885 A JP22793885 A JP 22793885A JP S61168922 A JPS61168922 A JP S61168922A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- gas
- substrate
- reaction chamber
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001020 plasma etching Methods 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims description 78
- 238000006243 chemical reaction Methods 0.000 claims description 42
- 230000005684 electric field Effects 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 64
- 238000000034 method Methods 0.000 description 18
- 238000000151 deposition Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000000376 reactant Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000010587 phase diagram Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000454 electroless metal deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000036470 plasma concentration Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009489 vacuum treatment Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0055—After-treatment, e.g. cleaning or desmearing of holes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/09—Treatments involving charged particles
- H05K2203/095—Plasma, e.g. for treating a substrate to improve adhesion with a conductor or for cleaning holes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US69214485A | 1985-01-17 | 1985-01-17 | |
| US692144 | 1985-01-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61168922A true JPS61168922A (ja) | 1986-07-30 |
| JPH0439222B2 JPH0439222B2 (enExample) | 1992-06-26 |
Family
ID=24779433
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22793885A Granted JPS61168922A (ja) | 1985-01-17 | 1985-10-15 | プラズマ・エツチング装置 |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0188208B2 (enExample) |
| JP (1) | JPS61168922A (enExample) |
| DE (1) | DE3671482D1 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5074456A (en) | 1990-09-18 | 1991-12-24 | Lam Research Corporation | Composite electrode for plasma processes |
| JP3215643B2 (ja) * | 1997-01-31 | 2001-10-09 | ワイエイシイ株式会社 | プラズマ処理装置 |
| WO2005081592A1 (en) * | 2004-02-20 | 2005-09-01 | The University Of Sydney | An apparatus for plasma treatment |
| US8770142B2 (en) | 2008-09-17 | 2014-07-08 | Veeco Ald Inc. | Electrode for generating plasma and plasma generator |
| US8851012B2 (en) | 2008-09-17 | 2014-10-07 | Veeco Ald Inc. | Vapor deposition reactor using plasma and method for forming thin film using the same |
| US8871628B2 (en) | 2009-01-21 | 2014-10-28 | Veeco Ald Inc. | Electrode structure, device comprising the same and method for forming electrode structure |
| US8257799B2 (en) | 2009-02-23 | 2012-09-04 | Synos Technology, Inc. | Method for forming thin film using radicals generated by plasma |
| US8758512B2 (en) | 2009-06-08 | 2014-06-24 | Veeco Ald Inc. | Vapor deposition reactor and method for forming thin film |
| US8771791B2 (en) | 2010-10-18 | 2014-07-08 | Veeco Ald Inc. | Deposition of layer using depositing apparatus with reciprocating susceptor |
| KR20130086620A (ko) * | 2010-11-05 | 2013-08-02 | 시너스 테크놀리지, 인코포레이티드 | 다중 플라즈마 챔버를 구비한 라디칼 반응기 |
| US8877300B2 (en) | 2011-02-16 | 2014-11-04 | Veeco Ald Inc. | Atomic layer deposition using radicals of gas mixture |
| US9163310B2 (en) | 2011-02-18 | 2015-10-20 | Veeco Ald Inc. | Enhanced deposition of layer on substrate using radicals |
| GB202312418D0 (en) * | 2023-08-14 | 2023-09-27 | P2I Ltd | Coating apparatus |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5291650A (en) * | 1976-01-29 | 1977-08-02 | Toshiba Corp | Continuous gas plasma etching apparatus |
| JPS5571027A (en) * | 1978-11-24 | 1980-05-28 | Hitachi Ltd | Continuous surface treatment apparatus |
| JPS56152973A (en) * | 1980-04-30 | 1981-11-26 | Tokuda Seisakusho Ltd | Sputter etching device |
| JPS59225524A (ja) * | 1983-06-06 | 1984-12-18 | Sanyo Electric Co Ltd | プラズマ反応方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4013532A (en) | 1975-03-03 | 1977-03-22 | Airco, Inc. | Method for coating a substrate |
| US4264393A (en) * | 1977-10-31 | 1981-04-28 | Motorola, Inc. | Reactor apparatus for plasma etching or deposition |
| US4289598A (en) * | 1980-05-03 | 1981-09-15 | Technics, Inc. | Plasma reactor and method therefor |
| US4282077A (en) * | 1980-07-03 | 1981-08-04 | General Dynamics, Pomona Division | Uniform plasma etching system |
| DE3107914A1 (de) | 1981-03-02 | 1982-09-16 | Leybold-Heraeus GmbH, 5000 Köln | Verfahren und vorrichtung zum beschichten von formteilen durch katodenzerstaeubung |
| JPS5970766A (ja) * | 1982-10-18 | 1984-04-21 | Ulvac Corp | プラズマｃｖｄ装置 |
-
1985
- 1985-10-15 JP JP22793885A patent/JPS61168922A/ja active Granted
-
1986
- 1986-01-07 DE DE8686100109T patent/DE3671482D1/de not_active Expired - Lifetime
- 1986-01-07 EP EP19860100109 patent/EP0188208B2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5291650A (en) * | 1976-01-29 | 1977-08-02 | Toshiba Corp | Continuous gas plasma etching apparatus |
| JPS5571027A (en) * | 1978-11-24 | 1980-05-28 | Hitachi Ltd | Continuous surface treatment apparatus |
| JPS56152973A (en) * | 1980-04-30 | 1981-11-26 | Tokuda Seisakusho Ltd | Sputter etching device |
| JPS59225524A (ja) * | 1983-06-06 | 1984-12-18 | Sanyo Electric Co Ltd | プラズマ反応方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3671482D1 (de) | 1990-06-28 |
| EP0188208B2 (en) | 1994-01-12 |
| EP0188208A2 (en) | 1986-07-23 |
| EP0188208A3 (en) | 1987-09-30 |
| EP0188208B1 (en) | 1990-05-23 |
| JPH0439222B2 (enExample) | 1992-06-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS61164224A (ja) | プラズマ発生装置 | |
| US5061359A (en) | Plasma processing apparatus including three bus structures | |
| JPH0439222B2 (enExample) | ||
| US5464476A (en) | Plasma processing device comprising plural RF inductive coils | |
| US4601807A (en) | Reactor for plasma desmear of high aspect ratio hole | |
| US20090120582A1 (en) | Shower plate and substrate processing apparatus | |
| CN103474327A (zh) | 具有被限制的处理室的多电极等离子体处理系统和与该电极的内部连接的电连接 | |
| US20130113169A1 (en) | Power input device and vacuum processing apparatus using the same | |
| KR20100025699A (ko) | 용량 결합 플라즈마 반응기 및 이를 이용한 플라즈마 처리 방법 및 이것에 의해 제조된 반도체 장치 | |
| US9175383B2 (en) | Double-coating device with one process chamber | |
| WO2011013525A1 (ja) | プラズマ処理装置及びプリント配線基板の製造方法 | |
| US5021138A (en) | Side source center sink plasma reactor | |
| US4399014A (en) | Plasma reactor and method therefor | |
| CN1846293A (zh) | 用于在等离子体处理装置中平衡返回电流的方法 | |
| US5543688A (en) | Plasma generation apparatus with interleaved electrodes and corresponding method | |
| JP3037597B2 (ja) | ドライエッチング装置 | |
| KR100747132B1 (ko) | 반도체 제조를 위한 원격의 제 2 애노드를 갖는 도금 시스템 | |
| CN100514571C (zh) | 等离子体刻蚀系统 | |
| KR19990080959A (ko) | 대면적 평면 안테나를 이용한 플라즈마 가공장치 | |
| JP7653776B2 (ja) | 表面処理装置および表面処理方法 | |
| US12347648B2 (en) | Filter box for a substrate processing system | |
| US4443409A (en) | Apparatus for improved low temperature ashing in a plasma | |
| CN117660940A (zh) | 用于多腔体沉积设备的双射频电源和多腔体沉积设备 | |
| JP2004111587A (ja) | フレキシブルプリント配線板の製造装置及び製造方法 | |
| KR20000043924A (ko) | 플라즈마 증착 장비 및 이를 이용한 반도체 소자의 절연막형성 방법 |