JPS61166528U - - Google Patents

Info

Publication number
JPS61166528U
JPS61166528U JP5056185U JP5056185U JPS61166528U JP S61166528 U JPS61166528 U JP S61166528U JP 5056185 U JP5056185 U JP 5056185U JP 5056185 U JP5056185 U JP 5056185U JP S61166528 U JPS61166528 U JP S61166528U
Authority
JP
Japan
Prior art keywords
semiconductor substrate
semiconductor device
seed crystal
insulating layer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5056185U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP5056185U priority Critical patent/JPS61166528U/ja
Publication of JPS61166528U publication Critical patent/JPS61166528U/ja
Pending legal-status Critical Current

Links

JP5056185U 1985-04-04 1985-04-04 Pending JPS61166528U (enExample)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5056185U JPS61166528U (enExample) 1985-04-04 1985-04-04

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5056185U JPS61166528U (enExample) 1985-04-04 1985-04-04

Publications (1)

Publication Number Publication Date
JPS61166528U true JPS61166528U (enExample) 1986-10-16

Family

ID=30568811

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5056185U Pending JPS61166528U (enExample) 1985-04-04 1985-04-04

Country Status (1)

Country Link
JP (1) JPS61166528U (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0745519A (ja) * 1993-07-27 1995-02-14 Semiconductor Energy Lab Co Ltd 半導体装置およびその製造方法
US6872605B2 (en) 1992-12-04 2005-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US7622335B2 (en) 1992-12-04 2009-11-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film transistor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6872605B2 (en) 1992-12-04 2005-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US7622335B2 (en) 1992-12-04 2009-11-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film transistor device
US7238558B2 (en) 1993-06-30 2007-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
JPH0745519A (ja) * 1993-07-27 1995-02-14 Semiconductor Energy Lab Co Ltd 半導体装置およびその製造方法

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