JPS61166028A - ドライエツチング装置 - Google Patents

ドライエツチング装置

Info

Publication number
JPS61166028A
JPS61166028A JP654885A JP654885A JPS61166028A JP S61166028 A JPS61166028 A JP S61166028A JP 654885 A JP654885 A JP 654885A JP 654885 A JP654885 A JP 654885A JP S61166028 A JPS61166028 A JP S61166028A
Authority
JP
Japan
Prior art keywords
electrode
self
vacuum chamber
bias voltage
high frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP654885A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0527967B2 (enExample
Inventor
Katsuzo Ukai
鵜飼　勝三
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP654885A priority Critical patent/JPS61166028A/ja
Publication of JPS61166028A publication Critical patent/JPS61166028A/ja
Publication of JPH0527967B2 publication Critical patent/JPH0527967B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP654885A 1985-01-17 1985-01-17 ドライエツチング装置 Granted JPS61166028A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP654885A JPS61166028A (ja) 1985-01-17 1985-01-17 ドライエツチング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP654885A JPS61166028A (ja) 1985-01-17 1985-01-17 ドライエツチング装置

Publications (2)

Publication Number Publication Date
JPS61166028A true JPS61166028A (ja) 1986-07-26
JPH0527967B2 JPH0527967B2 (enExample) 1993-04-22

Family

ID=11641382

Family Applications (1)

Application Number Title Priority Date Filing Date
JP654885A Granted JPS61166028A (ja) 1985-01-17 1985-01-17 ドライエツチング装置

Country Status (1)

Country Link
JP (1) JPS61166028A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004059716A1 (en) 2002-12-20 2004-07-15 Lam Research Corporation A system and method for controlling plasma with an adjustable coupling to ground circuit
JP2010524156A (ja) * 2007-03-30 2010-07-15 ラム リサーチ コーポレーション ウエハに面する電極に直流電圧を誘導するための方法および装置
JP2012165007A (ja) * 2006-07-10 2012-08-30 Lam Research Corporation プラズマ電位制御装置およびその方法
JP2012523101A (ja) * 2009-04-06 2012-09-27 ラム リサーチ コーポレーション 多重周波数容量結合プラズマエッチングチャンバ
CN108480053A (zh) * 2018-02-08 2018-09-04 中国矿业大学 一种摩擦电选的非线性电场自动调节装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5440079A (en) * 1977-09-05 1979-03-28 Fujitsu Ltd Plasma etching method
JPS57181376A (en) * 1981-04-30 1982-11-08 Toshiba Corp Dry etching device
JPS58158929A (ja) * 1982-03-17 1983-09-21 Kokusai Electric Co Ltd プラズマ発生装置
JPS58202531A (ja) * 1982-05-21 1983-11-25 Hitachi Ltd 反応性スパツタエツチング装置
JPS60187025A (ja) * 1984-03-07 1985-09-24 Ulvac Corp プラズマ放電装置に於けるセルフバイアス電圧制御装置
JPS61159735A (ja) * 1985-01-07 1986-07-19 Hitachi Ltd プラズマ処理方法及び装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5440079A (en) * 1977-09-05 1979-03-28 Fujitsu Ltd Plasma etching method
JPS57181376A (en) * 1981-04-30 1982-11-08 Toshiba Corp Dry etching device
JPS58158929A (ja) * 1982-03-17 1983-09-21 Kokusai Electric Co Ltd プラズマ発生装置
JPS58202531A (ja) * 1982-05-21 1983-11-25 Hitachi Ltd 反応性スパツタエツチング装置
JPS60187025A (ja) * 1984-03-07 1985-09-24 Ulvac Corp プラズマ放電装置に於けるセルフバイアス電圧制御装置
JPS61159735A (ja) * 1985-01-07 1986-07-19 Hitachi Ltd プラズマ処理方法及び装置

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004059716A1 (en) 2002-12-20 2004-07-15 Lam Research Corporation A system and method for controlling plasma with an adjustable coupling to ground circuit
CN100380606C (zh) * 2002-12-20 2008-04-09 朗姆研究公司 等离子体处理系统
US8518211B2 (en) 2002-12-20 2013-08-27 Lam Research Corporation System and method for controlling plasma with an adjustable coupling to ground circuit
US20130306240A1 (en) * 2002-12-20 2013-11-21 Lam Research Corporation System and Method for Controlling Plasma With an Adjustable Coupling to Ground Circuit
US9190302B2 (en) * 2002-12-20 2015-11-17 Lam Research Corporation System and method for controlling plasma with an adjustable coupling to ground circuit
JP2012165007A (ja) * 2006-07-10 2012-08-30 Lam Research Corporation プラズマ電位制御装置およびその方法
JP2010524156A (ja) * 2007-03-30 2010-07-15 ラム リサーチ コーポレーション ウエハに面する電極に直流電圧を誘導するための方法および装置
US8450635B2 (en) 2007-03-30 2013-05-28 Lam Research Corporation Method and apparatus for inducing DC voltage on wafer-facing electrode
JP2012523101A (ja) * 2009-04-06 2012-09-27 ラム リサーチ コーポレーション 多重周波数容量結合プラズマエッチングチャンバ
CN108480053A (zh) * 2018-02-08 2018-09-04 中国矿业大学 一种摩擦电选的非线性电场自动调节装置

Also Published As

Publication number Publication date
JPH0527967B2 (enExample) 1993-04-22

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