JPS6116502B2 - - Google Patents
Info
- Publication number
- JPS6116502B2 JPS6116502B2 JP1489878A JP1489878A JPS6116502B2 JP S6116502 B2 JPS6116502 B2 JP S6116502B2 JP 1489878 A JP1489878 A JP 1489878A JP 1489878 A JP1489878 A JP 1489878A JP S6116502 B2 JPS6116502 B2 JP S6116502B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- gas
- reaction chamber
- plasma generation
- generation tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007789 gas Substances 0.000 claims description 16
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 239000011261 inert gas Substances 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 238000001816 cooling Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- 238000011282 treatment Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 238000010405 reoxidation reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Drying Of Semiconductors (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1489878A JPS54107876A (en) | 1978-02-14 | 1978-02-14 | Method and apparatus for reduction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1489878A JPS54107876A (en) | 1978-02-14 | 1978-02-14 | Method and apparatus for reduction |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54107876A JPS54107876A (en) | 1979-08-24 |
| JPS6116502B2 true JPS6116502B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1986-04-30 |
Family
ID=11873802
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1489878A Granted JPS54107876A (en) | 1978-02-14 | 1978-02-14 | Method and apparatus for reduction |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54107876A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS587337B2 (ja) * | 1979-05-08 | 1983-02-09 | 理化学研究所 | 酸化物還元法 |
| JPS5762537A (en) * | 1980-10-02 | 1982-04-15 | Semiconductor Energy Lab Co Ltd | Forming method for film |
| JPS57138159A (en) * | 1981-02-20 | 1982-08-26 | Fujitsu Ltd | Formation of thin film |
-
1978
- 1978-02-14 JP JP1489878A patent/JPS54107876A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54107876A (en) | 1979-08-24 |