JPS61161712A - 半導体製造装置 - Google Patents

半導体製造装置

Info

Publication number
JPS61161712A
JPS61161712A JP292885A JP292885A JPS61161712A JP S61161712 A JPS61161712 A JP S61161712A JP 292885 A JP292885 A JP 292885A JP 292885 A JP292885 A JP 292885A JP S61161712 A JPS61161712 A JP S61161712A
Authority
JP
Japan
Prior art keywords
heating furnace
reaction tube
reaction pipe
semiconductor manufacturing
rotated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP292885A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0311088B2 (enExample
Inventor
Isao Hishikari
功 菱刈
Yasushi Sakaino
境野 靖
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chino Corp
Original Assignee
Chino Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chino Works Ltd filed Critical Chino Works Ltd
Priority to JP292885A priority Critical patent/JPS61161712A/ja
Publication of JPS61161712A publication Critical patent/JPS61161712A/ja
Publication of JPH0311088B2 publication Critical patent/JPH0311088B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP292885A 1985-01-11 1985-01-11 半導体製造装置 Granted JPS61161712A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP292885A JPS61161712A (ja) 1985-01-11 1985-01-11 半導体製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP292885A JPS61161712A (ja) 1985-01-11 1985-01-11 半導体製造装置

Publications (2)

Publication Number Publication Date
JPS61161712A true JPS61161712A (ja) 1986-07-22
JPH0311088B2 JPH0311088B2 (enExample) 1991-02-15

Family

ID=11543000

Family Applications (1)

Application Number Title Priority Date Filing Date
JP292885A Granted JPS61161712A (ja) 1985-01-11 1985-01-11 半導体製造装置

Country Status (1)

Country Link
JP (1) JPS61161712A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01280312A (ja) * 1987-09-29 1989-11-10 Tel Sagami Ltd 熱処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01280312A (ja) * 1987-09-29 1989-11-10 Tel Sagami Ltd 熱処理装置

Also Published As

Publication number Publication date
JPH0311088B2 (enExample) 1991-02-15

Similar Documents

Publication Publication Date Title
JPS61161712A (ja) 半導体製造装置
JPH0513396Y2 (enExample)
KR20220081935A (ko) 스풀 균형식 씨드 리프트
JPH07172975A (ja) 単結晶引上装置用原料組み込み方法及び装置
JPS61202445A (ja) 半導体製造装置
JPS60238073A (ja) 遠心鋳造炉
CN214622235U (zh) 一种电线电缆低温卷绕试验装置
JPH0340552Y2 (enExample)
JP2665500B2 (ja) Cz炉のワイヤ振れ止め装置
CN221563162U (zh) 一种建筑施工用铁管转运设备
JPS606426Y2 (ja) 焼入浴の整流装置
JP3040602U (ja) 排気用ダクトフ−ド部の平衡昇降装置
JP2563776B2 (ja) 原子炉燃料のつかみ装置
JPH033638B2 (enExample)
CN211179013U (zh) 压力锅性能综合试验装置
JPS6115030Y2 (enExample)
CN113432852B (zh) 一种编织绳疲劳测试装置及测试方法
CN222920020U (zh) 一种攻丝机
JPS59121187A (ja) 化合物半導体単結晶の引上装置
JP4026695B2 (ja) 単結晶保持装置
JP4026694B2 (ja) 単結晶保持装置
JPH10279386A (ja) 単結晶引上げ装置及び単結晶支持機構並びに単結晶引上げ方法
JPH0528558Y2 (enExample)
JPS6226458Y2 (enExample)
JP2000086386A (ja) 単結晶育成装置及び方法