JPS61160975A - Mos field effect transistor - Google Patents

Mos field effect transistor

Info

Publication number
JPS61160975A
JPS61160975A JP106585A JP106585A JPS61160975A JP S61160975 A JPS61160975 A JP S61160975A JP 106585 A JP106585 A JP 106585A JP 106585 A JP106585 A JP 106585A JP S61160975 A JPS61160975 A JP S61160975A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
formed
channel region
gt
lt
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP106585A
Other versions
JPH0482064B2 (en )
Inventor
Masanori Fukumoto
Shinji Odanaka
Takashi Osone
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7838Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel latral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025Channel region of field-effect devices
    • H01L29/1029Channel region of field-effect devices of field-effect transistors
    • H01L29/1033Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/105Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with vertical doping variation

Abstract

PURPOSE:To keep low the coefficient of sub-threshold current, and to reduce VT variations due to drain voltage, by a method wherein a high concentration impurity layer which inhibits the elongation of the drain voltage potential is formed immediately under a channel region at the sides of source-drain regions. CONSTITUTION:After an N-well 7 is formed by a normal process, a P-type channel region 5 is formed by ion implantation through the oxide film; then, a 100Angstrom gate oxide film 3 and a gate electrode 2 are formed. Next, N<+> layers 6 are formed immediately under the P-type channel region 5 by implanting e.g. phosphorus at 130kev and at a dosage of 1.0X10<12>/cm<2>. After deposition of SiO2, an SiO2 side wall 4 is formed by etching removal; thereafter, source- drain region 1 are formed. Then, a MOSFET is completed. Since the MOSFET thus obtained has a high concentration impurity layer 6 of reverse conductivity type to that of the channel region 5 formed immediately under the region 5 at the sides of the source-drain regions 1, the coefficient of sub-threshold current is small, and VT variations due to drain voltage can be inhibited.
JP106585A 1985-01-08 1985-01-08 Expired - Lifetime JPH0482064B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP106585A JPH0482064B2 (en) 1985-01-08 1985-01-08

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP106585A JPH0482064B2 (en) 1985-01-08 1985-01-08

Publications (2)

Publication Number Publication Date
JPS61160975A true true JPS61160975A (en) 1986-07-21
JPH0482064B2 JPH0482064B2 (en) 1992-12-25

Family

ID=11491131

Family Applications (1)

Application Number Title Priority Date Filing Date
JP106585A Expired - Lifetime JPH0482064B2 (en) 1985-01-08 1985-01-08

Country Status (1)

Country Link
JP (1) JPH0482064B2 (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63302567A (en) * 1987-06-02 1988-12-09 Sanyo Electric Co Ltd Manufacture of mos semiconductor device
JPS63302568A (en) * 1987-06-02 1988-12-09 Sanyo Electric Co Ltd Manufacture of mos semiconductor device
JPS645068A (en) * 1987-06-26 1989-01-10 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
US5151759A (en) * 1989-03-02 1992-09-29 Thunderbird Technologies, Inc. Fermi threshold silicon-on-insulator field effect transistor
US5367186A (en) * 1992-01-28 1994-11-22 Thunderbird Technologies, Inc. Bounded tub fermi threshold field effect transistor
US5369295A (en) * 1992-01-28 1994-11-29 Thunderbird Technologies, Inc. Fermi threshold field effect transistor with reduced gate and diffusion capacitance
US5440160A (en) * 1992-01-28 1995-08-08 Thunderbird Technologies, Inc. High saturation current, low leakage current fermi threshold field effect transistor
US5525822A (en) * 1991-01-28 1996-06-11 Thunderbird Technologies, Inc. Fermi threshold field effect transistor including doping gradient regions
US5543654A (en) * 1992-01-28 1996-08-06 Thunderbird Technologies, Inc. Contoured-tub fermi-threshold field effect transistor and method of forming same
US5786620A (en) * 1992-01-28 1998-07-28 Thunderbird Technologies, Inc. Fermi-threshold field effect transistors including source/drain pocket implants and methods of fabricating same
US5814869A (en) * 1992-01-28 1998-09-29 Thunderbird Technologies, Inc. Short channel fermi-threshold field effect transistors
US7302376B2 (en) 2002-08-15 2007-11-27 International Business Machines Corporation Device modeling for proximity effects
USRE40132E1 (en) 1988-06-17 2008-03-04 Elpida Memory, Inc. Large scale integrated circuit with sense amplifier circuits for low voltage operation

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS559454A (en) * 1978-07-05 1980-01-23 Nec Corp Short channel mis type electric field effective transistor
JPS5516480A (en) * 1978-07-21 1980-02-05 Nippon Telegr & Teleph Corp <Ntt> Insulating gate electrostatic effect transistor and semiconductor integrated circuit device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS559454A (en) * 1978-07-05 1980-01-23 Nec Corp Short channel mis type electric field effective transistor
JPS5516480A (en) * 1978-07-21 1980-02-05 Nippon Telegr & Teleph Corp <Ntt> Insulating gate electrostatic effect transistor and semiconductor integrated circuit device

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63302567A (en) * 1987-06-02 1988-12-09 Sanyo Electric Co Ltd Manufacture of mos semiconductor device
JPS63302568A (en) * 1987-06-02 1988-12-09 Sanyo Electric Co Ltd Manufacture of mos semiconductor device
JPS645068A (en) * 1987-06-26 1989-01-10 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
USRE40132E1 (en) 1988-06-17 2008-03-04 Elpida Memory, Inc. Large scale integrated circuit with sense amplifier circuits for low voltage operation
US5151759A (en) * 1989-03-02 1992-09-29 Thunderbird Technologies, Inc. Fermi threshold silicon-on-insulator field effect transistor
US5525822A (en) * 1991-01-28 1996-06-11 Thunderbird Technologies, Inc. Fermi threshold field effect transistor including doping gradient regions
US5367186A (en) * 1992-01-28 1994-11-22 Thunderbird Technologies, Inc. Bounded tub fermi threshold field effect transistor
US5369295A (en) * 1992-01-28 1994-11-29 Thunderbird Technologies, Inc. Fermi threshold field effect transistor with reduced gate and diffusion capacitance
US5374836A (en) * 1992-01-28 1994-12-20 Thunderbird Technologies, Inc. High current fermi threshold field effect transistor
US5543654A (en) * 1992-01-28 1996-08-06 Thunderbird Technologies, Inc. Contoured-tub fermi-threshold field effect transistor and method of forming same
US5786620A (en) * 1992-01-28 1998-07-28 Thunderbird Technologies, Inc. Fermi-threshold field effect transistors including source/drain pocket implants and methods of fabricating same
US5814869A (en) * 1992-01-28 1998-09-29 Thunderbird Technologies, Inc. Short channel fermi-threshold field effect transistors
US5440160A (en) * 1992-01-28 1995-08-08 Thunderbird Technologies, Inc. High saturation current, low leakage current fermi threshold field effect transistor
US7302376B2 (en) 2002-08-15 2007-11-27 International Business Machines Corporation Device modeling for proximity effects

Also Published As

Publication number Publication date Type
JPH0482064B2 (en) 1992-12-25 grant

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term