JPS61159792A

JPS61159792A - セラミツク配線基板の製法

セラミツク配線基板の製法

Info

Publication number: JPS61159792A
Authority: JP; Japan
Prior art keywords: ceramic; ceramic wiring; phosphoric acid; ceramic substrate; metal layer
Prior art date: 1985-01-07
Legal status : Granted

Application number

JP72585A

Other languages

English (en)

Japanese (ja)

Other versions

JPH0533555B2 (enrdf_load_stackoverflow

Inventor

昇山口

悟小川

吉澤　出

進梶田

脇　清隆

Current Assignee

Panasonic Electric Works Co Ltd

Original Assignee

Matsushita Electric Works Ltd

Priority date

1985-01-07

Filing date

1985-01-07

Publication date

1986-07-19

1985-01-07 Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd

1985-01-07 Priority to JP72585A priority Critical patent/JPS61159792A/ja

1986-07-19 Publication of JPS61159792A publication Critical patent/JPS61159792A/ja

1993-05-19 Publication of JPH0533555B2 publication Critical patent/JPH0533555B2/ja

Status Granted legal-status Critical Current

Links

239000000919 ceramic Substances 0.000 title claims description 47
238000000034 method Methods 0.000 claims description 36
239000000758 substrate Substances 0.000 claims description 32
NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 27
229910052751 metal Inorganic materials 0.000 claims description 20
239000002184 metal Substances 0.000 claims description 20
235000011007 phosphoric acid Nutrition 0.000 claims description 14
229910000147 aluminium phosphate Inorganic materials 0.000 claims description 11
238000004519 manufacturing process Methods 0.000 claims description 11
238000005240 physical vapour deposition Methods 0.000 claims description 10
238000009713 electroplating Methods 0.000 claims description 6
238000007733 ion plating Methods 0.000 claims description 4
238000004544 sputter deposition Methods 0.000 claims description 4
238000007740 vapor deposition Methods 0.000 claims description 3
UEZVMMHDMIWARA-UHFFFAOYSA-N Metaphosphoric acid Chemical compound OP(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-N 0.000 claims description 2
XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 claims description 2
229940005657 pyrophosphoric acid Drugs 0.000 claims description 2
150000003839 salts Chemical class 0.000 claims description 2
239000010410 layer Substances 0.000 description 16
238000005530 etching Methods 0.000 description 14
238000007788 roughening Methods 0.000 description 9
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
239000003795 chemical substances by application Substances 0.000 description 6
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
239000010949 copper Substances 0.000 description 5
239000011521 glass Substances 0.000 description 5
230000003746 surface roughness Effects 0.000 description 5
MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
239000010953 base metal Substances 0.000 description 4
239000004020 conductor Substances 0.000 description 4
229910052802 copper Inorganic materials 0.000 description 4
230000000694 effects Effects 0.000 description 4
239000000463 material Substances 0.000 description 4
229910052759 nickel Inorganic materials 0.000 description 4
HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
239000000853 adhesive Substances 0.000 description 3
230000001070 adhesive effect Effects 0.000 description 3
PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
230000000052 comparative effect Effects 0.000 description 3
238000007747 plating Methods 0.000 description 3
239000000126 substance Substances 0.000 description 3
GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 2
238000010304 firing Methods 0.000 description 2
239000000155 melt Substances 0.000 description 2
229910052863 mullite Inorganic materials 0.000 description 2
238000012545 processing Methods 0.000 description 2
238000005245 sintering Methods 0.000 description 2
239000004593 Epoxy Substances 0.000 description 1
229910001111 Fine metal Inorganic materials 0.000 description 1
230000002411 adverse Effects 0.000 description 1
239000012298 atmosphere Substances 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
229910021538 borax Inorganic materials 0.000 description 1
238000012993 chemical processing Methods 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
239000011889 copper foil Substances 0.000 description 1
229910052878 cordierite Inorganic materials 0.000 description 1
230000002950 deficient Effects 0.000 description 1
238000000151 deposition Methods 0.000 description 1
230000008021 deposition Effects 0.000 description 1
230000006866 deterioration Effects 0.000 description 1
238000010586 diagram Methods 0.000 description 1
JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
238000005868 electrolysis reaction Methods 0.000 description 1
238000000635 electron micrograph Methods 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
229910052839 forsterite Inorganic materials 0.000 description 1
229910052737 gold Inorganic materials 0.000 description 1
238000007654 immersion Methods 0.000 description 1
HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
150000004767 nitrides Chemical class 0.000 description 1
229910052763 palladium Inorganic materials 0.000 description 1
239000002245 particle Substances 0.000 description 1
229910052697 platinum Inorganic materials 0.000 description 1
238000005498 polishing Methods 0.000 description 1
239000000843 powder Substances 0.000 description 1
239000002002 slurry Substances 0.000 description 1
238000002791 soaking Methods 0.000 description 1
235000010339 sodium tetraborate Nutrition 0.000 description 1
239000004328 sodium tetraborate Substances 0.000 description 1
229910000679 solder Inorganic materials 0.000 description 1
-1 steatite Chemical compound 0.000 description 1
239000002344 surface layer Substances 0.000 description 1
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
229910052721 tungsten Inorganic materials 0.000 description 1
239000010937 tungsten Substances 0.000 description 1
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
229910052845 zircon Inorganic materials 0.000 description 1
GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1