JPS6115976A - プラズマ反応装置およびその使用方法 - Google Patents

プラズマ反応装置およびその使用方法

Info

Publication number
JPS6115976A
JPS6115976A JP59138153A JP13815384A JPS6115976A JP S6115976 A JPS6115976 A JP S6115976A JP 59138153 A JP59138153 A JP 59138153A JP 13815384 A JP13815384 A JP 13815384A JP S6115976 A JPS6115976 A JP S6115976A
Authority
JP
Japan
Prior art keywords
substrate
plasma
reaction
reaction tube
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59138153A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0355552B2 (enExample
Inventor
Kazufumi Ogawa
一文 小川
Yoshiko Yasuda
安田　美子
Kazuya Kikuchi
菊池　和也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP59138153A priority Critical patent/JPS6115976A/ja
Publication of JPS6115976A publication Critical patent/JPS6115976A/ja
Publication of JPH0355552B2 publication Critical patent/JPH0355552B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
    • B01J19/088—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • ing And Chemical Polishing (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
JP59138153A 1984-07-03 1984-07-03 プラズマ反応装置およびその使用方法 Granted JPS6115976A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59138153A JPS6115976A (ja) 1984-07-03 1984-07-03 プラズマ反応装置およびその使用方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59138153A JPS6115976A (ja) 1984-07-03 1984-07-03 プラズマ反応装置およびその使用方法

Publications (2)

Publication Number Publication Date
JPS6115976A true JPS6115976A (ja) 1986-01-24
JPH0355552B2 JPH0355552B2 (enExample) 1991-08-23

Family

ID=15215253

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59138153A Granted JPS6115976A (ja) 1984-07-03 1984-07-03 プラズマ反応装置およびその使用方法

Country Status (1)

Country Link
JP (1) JPS6115976A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998058731A3 (en) * 1997-06-20 1999-05-27 Flowgenix Corp Apparatus for exposing substrates to gas-phase radicals
WO2003029516A1 (en) * 2001-09-29 2003-04-10 Cree, Inc. Apparatus for inverted cvd
KR100745130B1 (ko) 2006-02-09 2007-08-01 삼성전자주식회사 박막 증착 장치 및 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53101276A (en) * 1977-02-16 1978-09-04 Hitachi Ltd Decompression cvd device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53101276A (en) * 1977-02-16 1978-09-04 Hitachi Ltd Decompression cvd device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998058731A3 (en) * 1997-06-20 1999-05-27 Flowgenix Corp Apparatus for exposing substrates to gas-phase radicals
WO2003029516A1 (en) * 2001-09-29 2003-04-10 Cree, Inc. Apparatus for inverted cvd
US8133322B2 (en) 2001-09-29 2012-03-13 Cree, Inc. Apparatus for inverted multi-wafer MOCVD fabrication
KR100745130B1 (ko) 2006-02-09 2007-08-01 삼성전자주식회사 박막 증착 장치 및 방법
US7781032B2 (en) 2006-02-09 2010-08-24 Samsung Electronics Co., Ltd. Method for depositing a thin film

Also Published As

Publication number Publication date
JPH0355552B2 (enExample) 1991-08-23

Similar Documents

Publication Publication Date Title
US9373499B2 (en) Batch-type remote plasma processing apparatus
JP2532401Y2 (ja) バイアスｅｃｒプラズマｃｖｄ装置
JP3979849B2 (ja) プラズマ処理装置および半導体装置の製造方法
US5626678A (en) Non-conductive alignment member for uniform plasma processing of substrates
JP3297288B2 (ja) 半導体装置の製造装置および製造方法
JP2921499B2 (ja) プラズマ処理装置
JP2013065872A (ja) 半導体装置の製造方法および基板処理装置
JP4435111B2 (ja) Ａｌｄ装置および半導体装置の製造方法
JPS6115976A (ja) プラズマ反応装置およびその使用方法
JP2990551B2 (ja) 成膜処理装置
JP4267506B2 (ja) プラズマ処理装置
JPS5821025B2 (ja) 気相化学蒸着装置
JPS62268127A (ja) プラズマ反応装置およびその使用方法
JP4384645B2 (ja) 処理管
JP2963145B2 (ja) Ｃｖｄ膜の形成方法及び形成装置
JPH01188678A (ja) プラズマ気相成長装置
JP2504489B2 (ja) 化学気相成長法
JP2607851Y2 (ja) 枚葉式ドライエッチング装置
JPH02246111A (ja) プラズマ処理装置
JPH10270364A (ja) 半導体成膜方法
JPH036366A (ja) 反応蒸着装置用基板ホルダー固定台
JPH0582474A (ja) 枚葉式ドライエツチング装置
JPH11238727A (ja) プラズマｃｖｄ装置
JP2532401Z (enExample)
KR20000009525U (ko) 고열효율 진공 증착기

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees