JPS61156727A - 化合物半導体装置およびその製法 - Google Patents

化合物半導体装置およびその製法

Info

Publication number
JPS61156727A
JPS61156727A JP59281765A JP28176584A JPS61156727A JP S61156727 A JPS61156727 A JP S61156727A JP 59281765 A JP59281765 A JP 59281765A JP 28176584 A JP28176584 A JP 28176584A JP S61156727 A JPS61156727 A JP S61156727A
Authority
JP
Japan
Prior art keywords
layer
type
solution
added
tellurium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59281765A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0473638B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Hiroyuki Kano
浩之 加納
Masafumi Hashimoto
雅文 橋本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Central R&D Labs Inc
Original Assignee
Toyota Central R&D Labs Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Central R&D Labs Inc filed Critical Toyota Central R&D Labs Inc
Priority to JP59281765A priority Critical patent/JPS61156727A/ja
Publication of JPS61156727A publication Critical patent/JPS61156727A/ja
Publication of JPH0473638B2 publication Critical patent/JPH0473638B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP59281765A 1984-12-27 1984-12-27 化合物半導体装置およびその製法 Granted JPS61156727A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59281765A JPS61156727A (ja) 1984-12-27 1984-12-27 化合物半導体装置およびその製法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59281765A JPS61156727A (ja) 1984-12-27 1984-12-27 化合物半導体装置およびその製法

Publications (2)

Publication Number Publication Date
JPS61156727A true JPS61156727A (ja) 1986-07-16
JPH0473638B2 JPH0473638B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-11-24

Family

ID=17643655

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59281765A Granted JPS61156727A (ja) 1984-12-27 1984-12-27 化合物半導体装置およびその製法

Country Status (1)

Country Link
JP (1) JPS61156727A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5598910A (en) * 1993-11-01 1997-02-04 Kabushikikaisha Equos Research Clutch mechanism
EP1653103A2 (de) 2004-10-26 2006-05-03 LuK Lamellen und Kupplungsbau Beteiligungs KG Kupplungsscheibenanordnung für eine Mehrscheibenkupplung

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5388A (en) * 1976-06-24 1978-01-05 Hitachi Ltd Iii-v group chemical compound semiconductor element and its manufacture
JPS59169186A (ja) * 1983-03-16 1984-09-25 Toshiba Corp 発光ダイオ−ドの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5388A (en) * 1976-06-24 1978-01-05 Hitachi Ltd Iii-v group chemical compound semiconductor element and its manufacture
JPS59169186A (ja) * 1983-03-16 1984-09-25 Toshiba Corp 発光ダイオ−ドの製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5598910A (en) * 1993-11-01 1997-02-04 Kabushikikaisha Equos Research Clutch mechanism
EP1653103A2 (de) 2004-10-26 2006-05-03 LuK Lamellen und Kupplungsbau Beteiligungs KG Kupplungsscheibenanordnung für eine Mehrscheibenkupplung

Also Published As

Publication number Publication date
JPH0473638B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-11-24

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