JPS6115600B2 - - Google Patents
Info
- Publication number
- JPS6115600B2 JPS6115600B2 JP14685678A JP14685678A JPS6115600B2 JP S6115600 B2 JPS6115600 B2 JP S6115600B2 JP 14685678 A JP14685678 A JP 14685678A JP 14685678 A JP14685678 A JP 14685678A JP S6115600 B2 JPS6115600 B2 JP S6115600B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor layer
- type
- conductivity type
- refractive index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 33
- 238000005530 etching Methods 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 239000007791 liquid phase Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 21
- 230000003287 optical effect Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000009036 growth inhibition Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14685678A JPS5574194A (en) | 1978-11-28 | 1978-11-28 | Manufacturing semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14685678A JPS5574194A (en) | 1978-11-28 | 1978-11-28 | Manufacturing semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5574194A JPS5574194A (en) | 1980-06-04 |
| JPS6115600B2 true JPS6115600B2 (enExample) | 1986-04-24 |
Family
ID=15417093
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14685678A Granted JPS5574194A (en) | 1978-11-28 | 1978-11-28 | Manufacturing semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5574194A (enExample) |
-
1978
- 1978-11-28 JP JP14685678A patent/JPS5574194A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5574194A (en) | 1980-06-04 |
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