JPS6115593B2 - - Google Patents
Info
- Publication number
- JPS6115593B2 JPS6115593B2 JP53074393A JP7439378A JPS6115593B2 JP S6115593 B2 JPS6115593 B2 JP S6115593B2 JP 53074393 A JP53074393 A JP 53074393A JP 7439378 A JP7439378 A JP 7439378A JP S6115593 B2 JPS6115593 B2 JP S6115593B2
- Authority
- JP
- Japan
- Prior art keywords
- gate
- igfet
- type
- substrate
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 16
- 230000005669 field effect Effects 0.000 claims description 5
- 101100119059 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) ERG25 gene Proteins 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Protection Of Static Devices (AREA)
- Amplifiers (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7439378A JPS551142A (en) | 1978-06-19 | 1978-06-19 | Semiconductor with protector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7439378A JPS551142A (en) | 1978-06-19 | 1978-06-19 | Semiconductor with protector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS551142A JPS551142A (en) | 1980-01-07 |
| JPS6115593B2 true JPS6115593B2 (de) | 1986-04-24 |
Family
ID=13545886
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7439378A Granted JPS551142A (en) | 1978-06-19 | 1978-06-19 | Semiconductor with protector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS551142A (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5750109A (en) * | 1980-09-10 | 1982-03-24 | Toshiba Corp | High impedance circuit for integrated circuit |
| JPS6211258A (ja) * | 1985-07-08 | 1987-01-20 | Nec Corp | ＧａＡｓ半導体集積回路 |
| US5686751A (en) * | 1996-06-28 | 1997-11-11 | Winbond Electronics Corp. | Electrostatic discharge protection circuit triggered by capacitive-coupling |
| JP5694020B2 (ja) * | 2011-03-18 | 2015-04-01 | トランスフォーム・ジャパン株式会社 | トランジスタ回路 |
-
1978
- 1978-06-19 JP JP7439378A patent/JPS551142A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS551142A (en) | 1980-01-07 |
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