JPS61149268U - - Google Patents
Info
- Publication number
- JPS61149268U JPS61149268U JP3320185U JP3320185U JPS61149268U JP S61149268 U JPS61149268 U JP S61149268U JP 3320185 U JP3320185 U JP 3320185U JP 3320185 U JP3320185 U JP 3320185U JP S61149268 U JPS61149268 U JP S61149268U
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- arranged opposite
- exit port
- charged particle
- deflection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002245 particle Substances 0.000 claims 3
- 239000006185 dispersion Substances 0.000 claims 1
- 230000005684 electric field Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
Landscapes
- Analysing Materials By The Use Of Radiation (AREA)
- Electron Tubes For Measurement (AREA)
Description
第１図は本考案の一実施例の構成図、第２図及
び第３図は本考案に使用される検出器の一例を示
した図、第４図は本考案を説明するための図、第
５図は従来技術を説明するための図である。
１：半球面型電極、１ａ，１ｂ：半球電極、２
，２′：光電子、３：分析用電源、４：掃引制御
電極、５ａ，５ｂ，５ｃ，５ｄ：電子線検出器、
６：検出器用加速電源、７：メツシユ状電極、８
：偏向電極、９：偏向電源。
FIG. 1 is a configuration diagram of an embodiment of the present invention, FIGS. 2 and 3 are diagrams showing an example of a detector used in the present invention, and FIG. 4 is a diagram for explaining the present invention. FIG. 5 is a diagram for explaining the prior art. 1: Hemispherical electrode, 1a, 1b: Hemispherical electrode, 2
, 2': photoelectron, 3: power source for analysis, 4: sweep control electrode, 5a, 5b, 5c, 5d: electron beam detector,
6: Acceleration power source for detector, 7: Meshed electrode, 8
: Deflection electrode, 9: Deflection power supply.
Claims (1)
電界を生じさせるための電源と、該電極の出射口
を通過する荷電粒子を検出するために該出射口に
対向して配置された複数の荷電粒子検出器とを備
えた装置において、各検出器の入射口の非検出部
分に略一致させて配設され、この部分に向つて入
射する荷電粒子を検出器の有効検出面に向けて偏
向するための偏向電極を設けたことを特徴とする
軌道分散型荷電粒子分析装置。 A pair of electrodes arranged opposite to each other, a power source for generating an electric field between the two electrodes, and a plurality of electrodes arranged opposite to the exit port for detecting charged particles passing through the exit port of the electrodes. In an apparatus equipped with a charged particle detector of An orbit dispersion type charged particle analyzer characterized by being provided with a deflection electrode for deflection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3320185U JPH0323654Y2 (en) | 1985-03-08 | 1985-03-08 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3320185U JPH0323654Y2 (en) | 1985-03-08 | 1985-03-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61149268U true JPS61149268U (en) | 1986-09-13 |
| JPH0323654Y2 JPH0323654Y2 (en) | 1991-05-23 |
Family
ID=30535430
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3320185U Expired JPH0323654Y2 (en) | 1985-03-08 | 1985-03-08 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0323654Y2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8569894B2 (en) | 2010-01-13 | 2013-10-29 | Advanced Semiconductor Engineering, Inc. | Semiconductor package with single sided substrate design and manufacturing methods thereof |
| TWI411075B (en) | 2010-03-22 | 2013-10-01 | Advanced Semiconductor Eng | Semiconductor package and manufacturing method thereof |
| US9406658B2 (en) | 2010-12-17 | 2016-08-02 | Advanced Semiconductor Engineering, Inc. | Embedded component device and manufacturing methods thereof |
-
1985
- 1985-03-08 JP JP3320185U patent/JPH0323654Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0323654Y2 (en) | 1991-05-23 |
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