JPS6114633B2 - - Google Patents

Info

Publication number
JPS6114633B2
JPS6114633B2 JP55173503A JP17350380A JPS6114633B2 JP S6114633 B2 JPS6114633 B2 JP S6114633B2 JP 55173503 A JP55173503 A JP 55173503A JP 17350380 A JP17350380 A JP 17350380A JP S6114633 B2 JPS6114633 B2 JP S6114633B2
Authority
JP
Japan
Prior art keywords
wafer
disk
hole
diagonal
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55173503A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5796452A (en
Inventor
Koji Matsuda
Masahiko Aoki
Katsuo Naito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NITSUSHIN HAIBORUTEEJI KK
Original Assignee
NITSUSHIN HAIBORUTEEJI KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NITSUSHIN HAIBORUTEEJI KK filed Critical NITSUSHIN HAIBORUTEEJI KK
Priority to JP55173503A priority Critical patent/JPS5796452A/ja
Publication of JPS5796452A publication Critical patent/JPS5796452A/ja
Publication of JPS6114633B2 publication Critical patent/JPS6114633B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
JP55173503A 1980-12-08 1980-12-08 Wafer mounting device for ion implanting device Granted JPS5796452A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55173503A JPS5796452A (en) 1980-12-08 1980-12-08 Wafer mounting device for ion implanting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55173503A JPS5796452A (en) 1980-12-08 1980-12-08 Wafer mounting device for ion implanting device

Publications (2)

Publication Number Publication Date
JPS5796452A JPS5796452A (en) 1982-06-15
JPS6114633B2 true JPS6114633B2 (enrdf_load_stackoverflow) 1986-04-19

Family

ID=15961719

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55173503A Granted JPS5796452A (en) 1980-12-08 1980-12-08 Wafer mounting device for ion implanting device

Country Status (1)

Country Link
JP (1) JPS5796452A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6267458U (enrdf_load_stackoverflow) * 1985-10-17 1987-04-27

Also Published As

Publication number Publication date
JPS5796452A (en) 1982-06-15

Similar Documents

Publication Publication Date Title
JP2582552B2 (ja) イオン注入装置
US5753923A (en) Ion injection device and method therefor
EP0074691A2 (en) Electrostatic chuck for holding a semiconductor wafer
JPS60240041A (ja) サイクリック真空処理装置において熱伝達を制御するための装置
JP2004303499A (ja) イオン注入装置およびイオン注入方法
KR20140099903A (ko) 이온 주입 장치 및 이온 주입 방법
US5124557A (en) Apparatus and methods relating to ion implantation and heat transfer
US4315182A (en) Frosted X-ray tube
JP6982701B2 (ja) 静電チャック、真空処理装置及び基板処理方法
JPS6114633B2 (enrdf_load_stackoverflow)
JP2010015774A (ja) イオン注入装置
JP3139378B2 (ja) イオン注入装置
JPS6127857B2 (enrdf_load_stackoverflow)
US6667485B2 (en) Ion implanting apparatus and sample processing apparatus
EP0217616A2 (en) Substrate processing apparatus
US4806769A (en) Disk exchangeable target mechanism with effective cooling means, for ion implantation system
JPS6276147A (ja) イオン注入装置
JPS59134543A (ja) イオン打込装置
JP6686962B2 (ja) 貼り合わせウェーハの製造方法
JPH0222986Y2 (enrdf_load_stackoverflow)
JPS63108713A (ja) イオン注入方法
JP2002231176A (ja) イオン注入機
JPH05159738A (ja) イオン注入装置
JP2707080B2 (ja) イオン打込方法及びその装置
JPS61214345A (ja) イオン注入装置のためのプラテンおよびビーム設定フラグ組立体