JPS5796452A - Wafer mounting device for ion implanting device - Google Patents

Wafer mounting device for ion implanting device

Info

Publication number
JPS5796452A
JPS5796452A JP55173503A JP17350380A JPS5796452A JP S5796452 A JPS5796452 A JP S5796452A JP 55173503 A JP55173503 A JP 55173503A JP 17350380 A JP17350380 A JP 17350380A JP S5796452 A JPS5796452 A JP S5796452A
Authority
JP
Japan
Prior art keywords
wafer
hole
disc
rotation
ion implanting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55173503A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6114633B2 (enrdf_load_stackoverflow
Inventor
Koji Matsuda
Masahiko Aoki
Katsuo Naito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NISSHIN HAIBORUTEEJI KK
Nissin High Voltage Co Ltd
Original Assignee
NISSHIN HAIBORUTEEJI KK
Nissin High Voltage Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NISSHIN HAIBORUTEEJI KK, Nissin High Voltage Co Ltd filed Critical NISSHIN HAIBORUTEEJI KK
Priority to JP55173503A priority Critical patent/JPS5796452A/ja
Publication of JPS5796452A publication Critical patent/JPS5796452A/ja
Publication of JPS6114633B2 publication Critical patent/JPS6114633B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
JP55173503A 1980-12-08 1980-12-08 Wafer mounting device for ion implanting device Granted JPS5796452A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55173503A JPS5796452A (en) 1980-12-08 1980-12-08 Wafer mounting device for ion implanting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55173503A JPS5796452A (en) 1980-12-08 1980-12-08 Wafer mounting device for ion implanting device

Publications (2)

Publication Number Publication Date
JPS5796452A true JPS5796452A (en) 1982-06-15
JPS6114633B2 JPS6114633B2 (enrdf_load_stackoverflow) 1986-04-19

Family

ID=15961719

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55173503A Granted JPS5796452A (en) 1980-12-08 1980-12-08 Wafer mounting device for ion implanting device

Country Status (1)

Country Link
JP (1) JPS5796452A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6267458U (enrdf_load_stackoverflow) * 1985-10-17 1987-04-27

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6267458U (enrdf_load_stackoverflow) * 1985-10-17 1987-04-27

Also Published As

Publication number Publication date
JPS6114633B2 (enrdf_load_stackoverflow) 1986-04-19

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