JPS61142785A - 半導体レ−ザ装置 - Google Patents

半導体レ−ザ装置

Info

Publication number
JPS61142785A
JPS61142785A JP59265079A JP26507984A JPS61142785A JP S61142785 A JPS61142785 A JP S61142785A JP 59265079 A JP59265079 A JP 59265079A JP 26507984 A JP26507984 A JP 26507984A JP S61142785 A JPS61142785 A JP S61142785A
Authority
JP
Japan
Prior art keywords
laser operating
internal reflection
section
face
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59265079A
Other languages
English (en)
Japanese (ja)
Other versions
JPH027195B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Osamu Yamamoto
修 山本
Hiroshi Hayashi
寛 林
Taiji Morimoto
泰司 森本
Saburo Yamamoto
三郎 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP59265079A priority Critical patent/JPS61142785A/ja
Priority to US06/807,867 priority patent/US4720834A/en
Priority to EP85309030A priority patent/EP0186387B1/en
Priority to DE8585309030T priority patent/DE3582666D1/de
Publication of JPS61142785A publication Critical patent/JPS61142785A/ja
Publication of JPH027195B2 publication Critical patent/JPH027195B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
    • H01S3/082—Construction or shape of optical resonators or components thereof comprising three or more reflectors defining a plurality of resonators, e.g. for mode selection or suppression
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1021—Coupled cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Lasers (AREA)
JP59265079A 1984-12-15 1984-12-15 半導体レ−ザ装置 Granted JPS61142785A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP59265079A JPS61142785A (ja) 1984-12-15 1984-12-15 半導体レ−ザ装置
US06/807,867 US4720834A (en) 1984-12-15 1985-12-11 Internal-reflection-interference semiconductor laser device
EP85309030A EP0186387B1 (en) 1984-12-15 1985-12-12 An internal-reflection-interference semiconductor laser device
DE8585309030T DE3582666D1 (de) 1984-12-15 1985-12-12 Halbleiterlaservorrichtung mit einem inneren reflektor, der interferenz verursacht.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59265079A JPS61142785A (ja) 1984-12-15 1984-12-15 半導体レ−ザ装置

Publications (2)

Publication Number Publication Date
JPS61142785A true JPS61142785A (ja) 1986-06-30
JPH027195B2 JPH027195B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-02-15

Family

ID=17412303

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59265079A Granted JPS61142785A (ja) 1984-12-15 1984-12-15 半導体レ−ザ装置

Country Status (4)

Country Link
US (1) US4720834A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0186387B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS61142785A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3582666D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4901329A (en) * 1988-10-31 1990-02-13 International Business Machines Corporation Integrated laser arrays and support circuits
US5126803A (en) * 1991-03-11 1992-06-30 The Boeing Company Broadband quantum well LED
JP2001284715A (ja) * 2000-03-30 2001-10-12 Ando Electric Co Ltd 外部共振器型レーザ光源
US6798798B2 (en) * 2000-12-12 2004-09-28 The Furukawa Electric Co., Ltd. Semiconductor laser apparatus and fabrication method of same, and semiconductor laser module
EP1769568A1 (en) * 2004-07-16 2007-04-04 University College Cork-National University of Ireland, Cork Method for designing a semiconductor laser with intracavity reflecting features, semiconductor laser and method of fabrication thereof
CN100477420C (zh) * 2004-07-16 2009-04-08 爱尔兰国家大学科克学院 具有腔内反射特征的半导体激光器的设计方法、半导体激光器及其制造方法
US9007723B1 (en) 2013-12-13 2015-04-14 HGST Netherlands B.V. Microwave-assisted magnetic recording (MAMR) head employing advanced current control to establish a magnetic resonance state
US8908481B1 (en) 2014-01-27 2014-12-09 HGST Netherlands B.V. Thermally-assisted magnetic recording head that suppresses effects of mode hopping

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52152182A (en) * 1976-06-14 1977-12-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light emitting element
JPS52155992A (en) * 1976-06-21 1977-12-24 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5638497Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1974-12-03 1981-09-08
US4092659A (en) * 1977-04-28 1978-05-30 Rca Corporation Multi-layer reflector for electroluminescent device
US4163953A (en) * 1977-07-07 1979-08-07 Northern Telecom Limited Double heterostructure laser for direct coupling to an optical fiber
US4284963A (en) * 1979-08-24 1981-08-18 Mcdonnell Douglas Corporation Etalon laser diode
US4488307A (en) * 1982-06-07 1984-12-11 The United States Of America As Represented By The Secretary Of The Navy Three-mirror active-passive semiconductor laser
US4608697A (en) * 1983-04-11 1986-08-26 At&T Bell Laboratories Spectral control arrangement for coupled cavity laser

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52152182A (en) * 1976-06-14 1977-12-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light emitting element
JPS52155992A (en) * 1976-06-21 1977-12-24 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser

Also Published As

Publication number Publication date
JPH027195B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-02-15
EP0186387A2 (en) 1986-07-02
US4720834A (en) 1988-01-19
EP0186387B1 (en) 1991-04-24
DE3582666D1 (de) 1991-05-29
EP0186387A3 (en) 1988-07-13

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