JPS61142520A - Thin film magnetic head - Google Patents

Abstract

PURPOSE:To form the title magnetic head consisting of a combination of a substrate satisfying the requisite charactersitic as the substrate and a Co-Nb-Zr film appropriate for the substrate by using a Co amorphous material as the metallic magnetic material, and forming the nonmagnetic substrate consisting of a stabilized zirconia phase. CONSTITUTION:A ceramic consisting of a stabilized zirconia phase is used as a nonmagnetic substrate, and an amorphous Co metallic material is vapor- deposited on the substrate to form a magnetic core. A Co-Nb-Zr material is desirable as the amorphous Co metallic material. A material contg. 4-20at%, in total, elements selected from Ti, V, Cr, Mn, Nb, and Ta, 2-10at%, in total, at least one kind of element between Zr and Hf, <=3at% (including zero), in total, metalloid element such as B, C, Si, P, and S, and the remainder of Co is preferable as the Co metallic material. The magnetic core is formed on the substrate preferably by vapor deposition such as sputtering.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a thin film magnetic head suitable for use in recording and reproducing high-density magnetic recording.

[Prior Art] In recent years, there has been a strong demand for higher recording densities in the field of magnetic recording, and in longitudinal recording media, conventional γ-Fe2O3 is coated on the disk together with resin. In order to obtain a high coercive force, a material doped with Co is also used.

Furthermore, in order to increase the magnetic recording density, electroless plating of C0-N1-P, and furthermore, co-pt.

Recording media coated with Co-Ni-Pt, Co-Ni, etc. by sputtering are beginning to be used.

On the other hand, as a recording medium for perpendicular magnetic recording, coating type C
Hexagonal Ba ferrite with large axial anisotropy.

As for the thin film type, Co-0r magnetic film and the like are seen as promising and are being developed.

Furthermore, since conventional magnetic heads formed from ferrite cores are not compatible with magnetic heads, development of magnetic heads with new configurations is progressing. In high-density magnetic recording heads, those using Co--Nb--Zr based materials as the core are viewed as promising. This is C0-2r
By adding Nb, the saturation magnetic flux density decreases, but the magnetic permeability increases, so the magnetic properties are improved in a comprehensive sense, but currently sputtering on non-magnetic substrates such as glass by Co-Nb-Z
A method has been put into practical use in which a film of r II is formed and a gap portion is formed by bonding. Also, Co
-Nb-Zr II alone lacks magnetic flux density, so ferrite is often used as a back-up material, but in any case a non-magnetic substrate must be used on the surface facing the magnetic disk surface. However, the glasses currently in use have problems in terms of wear resistance or sliding properties. Therefore, a new non-magnetic substrate other than glass is required.

[Problem that the invention seeks to solve]

As mentioned above, in a non-magnetic substrate for a magnetic head, since Co-Nb-Zrjl is directly formed on the non-magnetic substrate,
It is necessary to satisfy the following characteristics. First, the coefficient of thermal expansion is Co-Nb-Zr l! (7) 100X 1
It needs to be equivalent to 0°C.

If the difference in thermal expansion coefficient between the substrate material and the thin film is too large, problems such as peeling and cracking of the film will occur during cooling after film formation.

Therefore, the difference in thermal expansion coefficient is at most ±10X10-'
C-', preferably ±5X10-'C-'.

Second, since the film is directly formed, the surface condition of the substrate is extremely important, and it is desirable that the bore be within 1% at most, and that surface roughness and micro waviness be as small as possible.

Thirdly, it is required that the disk not be damaged during sliding, that is, that it has good sliding characteristics.

Fourthly, good workability is required when processing into a head shape.

Co-Nb-Zrjl made by vapor deposition such as sputtering is more likely to become amorphous than one made by roll quenching. The Co-Nb-1r alloy must be in an amorphous state because when it becomes crystalline, the magnetic permeability and saturation magnetization Bs of the magnetic properties are significantly lowered compared to those in an amorphous state.

In order to maintain the amorphous state, Zr is added at 8 at% or more, but when the amount of Zr is increased in this way, although the amorphous state is maintained, the magnetic properties deteriorate. I had something to do.

Therefore, it is necessary to select a component that has good magnetic properties while maintaining an amorphous state.

An object of the present invention is to provide a magnetic head that combines a substrate that satisfies the above-mentioned required characteristics for the substrate and an appropriate Co--Nb--Zr VA.

[Means for Solving the Problems] The thin center magnetic head of the present invention uses a ceramic substantially consisting of a stabilized zirconia phase as a nonmagnetic substrate, and an amorphous Co-based metal material is deposited thereon. It is characterized by having a made magnetic core. As the amorphous Co-based gold metal material, a Qo-Nb-Zr system is desirable.

The Co-based amorphous material of the magnetic head iii of the present invention is made of Ti
, V, Cr, Mn, Nb, and Ta in a total of 4 to 20 at%, and Zr.

) (2 to 10 at% in total of at least one element of f
.

A material containing at least 3 at % (including 0) of at least one of the metalloid elements B, C, Si 2 , P, and S in total, with the remainder being substantially Co is desirable.

In the magnetic head of the present invention, it is desirable that the magnetic core be formed on the substrate by vapor deposition such as sputtering.

The above ceramic substrate contains 10 to 30 yttrium oxide.
wt%, aluminum oxide 0.5 to 10 wt%.

Mn 02, T! 02, S! 02 and UFe
0.2 to 10w of at least one of 203
It is desirable that the content be zirconium oxide in an amount of t%, with the remainder being substantially zirconium oxide. The thermal expansion coefficient of ceramic substrate is 90-1
10x10-7℃-', more preferably 95-105X
10-'-c-1.

In the above amorphous magnetic material, Ti, V.

From Cr, Mn, Nb, Ta'; t
-7 (7) At least one of Ti, Nb, and Ta
Contains 5 to 15 at% of seeds in total, and Zr and @f are 2 to 15 at%.
When containing 6 at%, the magnetic properties can be further improved. When Nb is selected from among Ti, Nb, and Ta, it has excellent wear resistance, and Ti is effective in further improving corrosion resistance. Furthermore, when Ta is used, the crystallization temperature can be relatively high.

'If Zr alone is less than Sat%, it will be difficult to make it amorphous, but by adding less than 2 at% of Hf to make the total of 7-r and Hf 2 to 6 at%. It becomes possible to become amorphous. In this way, convert Zrl to S
When reduced to less than at %, the saturation magnetic flux density of this material can be significantly improved.

Among the metalloid elements that can be included in amorphous magnetic materials, B and Si are elements that greatly contribute to amorphization.
It is desirable to select B and sr as metalloid elements.

When a magnetic material does not contain a metalloid element, it is difficult to make it amorphous using a manufacturing method using roll quenching, but when a magnetic material is made by vapor deposition such as a sputtering method, it can be made amorphous. When metaloid is not contained in this way, magnetic permeability and saturation magnetic flux density can be further increased.

Among the iron group elements, magnetic materials based on Co are less likely to rust. It is also desirable because of its low magnetostriction.

[Function] The ceramic substantially consisting of a stabilized zirconia phase used in the substrate of the thin-film magnetic head of the present invention is made of Co
-Nb-Zr The coefficient of thermal expansion is 85, which is almost the same as that of the amorphous soft magnetic material film. Zirconium oxide (Zr 02 )
Although the coefficient of thermal expansion varies somewhat depending on yttrium oxide (Y2O2) I, it is 90 to 110 x 10-7°C, and the adhesion when Co-Nb-ZrffQ is formed is very good. Moreover, ZrO2 is another aluminum oxide (Al1).

Compared to ceramics such as No. 03), it has better sliding properties and also has better wear resistance.

As is well known, there are two main existing uses for ZI"02. One is to use fine Zr02 powder with low ω
It is a partially stabilized zirconia that obtains high strength and toughness by adding stabilizers such as MgO, CaO, Y203, etc., and allowing the high temperature layer to remain at room temperature. The other type is stabilized zirconia, which is used in oxygen sensors and other devices, and utilizes oxygen ion inductivity at high temperatures by adding a large amount of stabilizer. Thus, the properties of ZrO2 vary greatly depending on the amount of stabilizer. Partially stabilized ZrO2 has fine grains and can easily be used to obtain high-density products, but on the other hand, the resistance during cutting is too large, making it difficult to meet the fourth requirement of good workability as a substrate material. It is inappropriate because it goes against the grain. On the other hand, the workability of stabilized zirconia mainly composed of cubic crystals is significantly improved compared to partially stabilized zirconia.

Cubic crystals tend to cause grain growth and leave bores inside the grains, making it difficult to obtain high-density products. By adding a sintering aid such as Fe20x and applying hot isostatic pressing (HIP) treatment after pressureless sintering, it is possible to achieve a high relative density of 99% or more. In other words, all of these infusions are dissolved in ZrO2,
Since it promotes sintering of 2r○2, it is effective in increasing the density.

On the other hand, since the addition of the above-mentioned oxide promotes grain growth, there is a possibility that large bores that cannot be eliminated remain within the grains. In order to prevent this, AI 203, which does not form a solid solution with Zr 02, is added, and by its dispersion, the cubic crystal 7r
02 grain growth is suppressed.

In this way, the combined use of Al2O3 and a sintering aid has the effect of both promoting sintering and suppressing grain growth, so even pressureless sintering alone can produce a sintered body with a relative density of about 96-97%. can get. By further HIPing this, a relative density of 99% or more can be achieved.

Furthermore, in order to obtain desired effects, it is necessary to select the composition, sintering conditions, etc. within predetermined ranges, as described below. The amount of stabilizer Y203 added is 10-3o
It is preferable that it is wt%, but the reason is that 1owt
If the Y2O31 content is less than 30 wt%, the cutting resistance increases due to the presence of residual tetragonal crystals, while if the Y2O31 content exceeds 30 wt%, it becomes difficult to increase the sintered density, and the cubic crystals contain YaZr.
This is because sα2 etc. are precipitated and have a negative effect on behavioral characteristics (AI).

The amount of 03 added is preferably 0.5 to 10 wt%. This is because if it is less than 0.5 wt%, it will be dispersed in ZrO2 and will not have the effect of suppressing grain growth, and if it exceeds 10 wt%, the hardness will increase and the sliding properties of ZrO2 will be impaired. This is because the Mn02.

The amount of sintering aids such as Ti 02 , Si 02 , l”e 20a, etc. needs to be limited to 0.2 to 10 wt%. If it is less than 0.2 wt%, the sintering density cannot be improved as an aid. , this is because there is no effect, and 10W [%
This is because, if the value exceeds 0.25%, the hardness of Zr 02 decreases, contrary to the case of Al2O3. Furthermore, in the present invention,
If the amount of Al2O3 and sintering aid added is large, the coefficient of thermal expansion will drop below 90X10'''Q'', so it is inappropriate to add too much. As for the sintering conditions, sintering at 1300 to 1600°C in the air is desirable. this is,
This is because below 1300°C, sintering is insufficient and the density cannot be increased, and above 1600°C grain growth cannot be suppressed even if Al2O3 is contained.

In addition, the HIP conditions are 1200-1500℃, 1
ooo~1500 atm is desirable.

This zirconia ceramic contains M! as an impurity! I
f O, Hf 02 , Ca O, etc., combination M+ Te2
Even if the content is less than wt%, the same effect of the present invention will not be reduced.

In the above, Y2O3 is added to stabilize ZrO2, but the addition method includes Zr 02 ,
Y2O3 powder may be mixed and directly sintered, or a powder co-precipitated from a solution state and calcined may be used.

The zirconia ceramic described above is processed into the shape of a magnetic head substrate, and a magnetic core made of an amorphous magnetic material is formed in the gear forming portion to form a magnetic head.

The amorphous 'R magnetic material contains Zr, Hf for amorphization, and metalloid elements as necessary in the iron group element base, and Ti, Hf, and Ti for adjusting the magnetic properties.
Contains an element selected from V, Cr, Mn, Nb, and Ta.

The metalloid elements B, C, Si, P, and S are suitable for making this material amorphous, but if they are included in large amounts, they are bad for magnetic properties such as magnetic permeability and saturation magnetic flux density. Because of the adverse effects, it is necessary to keep the amount below 3 at% at most. Metaloid Uchiday.

3i has a large effect on making the material amorphous, and can be made amorphous even in a small amount.

Even if the metalloid component is reduced in this way, Zr.

By setting Hr to 2 to S at %, it can be made amorphous by sputtering. Zr.

When the amount of Hf is less than 2 at%, it is extremely difficult to make it amorphous. On the other hand, if it exceeds e at %, the magnetic properties will deteriorate.

The functions of each element, Ti, V, Cr, Mn, Nb, and Ta, all play a role in changing the magnetostriction constant, but when other characteristics are also considered, the most notable effects are as follows.

That is, Ti and Or improve corrosion resistance.

Nb improves wear resistance, and Ta improves crystallization temperature.

Also, Mn and V mainly have an effect on controlling the magnetostriction constant at+.

[Example] The invention will be explained in detail by the following examples.

FIG. 1 is a diagram schematically showing an embodiment of the magnetic head of the present invention. The magnetic head 1 consists of a slider 2 and a chip 3, and the chip 3 is fixed in a slit 6 formed in one of the two air bearing surfaces 4.5 of the slider 2 by molding of a material such as glass. has been done.

A detailed structure of an example of the chip 3 is shown in FIGS. 2 and 3. In FIG. 2, an amorphous magnetic material 11!11.degree. 12 is formed on a stabilized zirconia ceramic substrate 10 by sputtering. In FIG. 3, amorphous magnetic materials 113-15, 16-18 and insulating layers 19-20.
21 and 22 are alternately stacked. Here, the amorphous magnetic material film described above is used. Further, the insulating layer may be made of, for example, Si 02 or Al 2
A nonmagnetic insulating film such as No. 03 can be formed by sputtering or the like. The pair of chip members are glass-bonded between metal magnetic films so as to have a gap 31 . 3
2 indicates a glass joint. The window 33 is wound with a predetermined number of turns.

Book 1 like this! To create a magnetic head, first,
A study on stabilized zirconia ceramic substrates was conducted as follows.

Y2 was added to fine Zr02 powder with a secondary particle size of 0.5 μm.
03. AI 20a, Mn 02 as sintering aid.

Ti 02. Si02. Fe 203 was blended in the proportions shown in the table and mixed in a ball mill using ethanol as a solvent. Add polyvinyl alcohol (
PVA) and polyethylene glycol (PEG) were added, granulated with a spray dryer, molded, and then sintered under the conditions shown in Table 1. After measuring the density using the underwater displacement method, it was made into a 3" wafer by surface grinding and mirror lapping. After measuring the surface roughness, Co-10at%Nb-3,58t%Z
A film was formed by T'' If!1 sputtering, and the adhesion of the film was evaluated.

The cutting resistance was measured by measuring the stress applied to the blade of the peripheral slicer using a piezoelectric element. The above results are shown in Table 2. No. in the table, 1.5.6, 9゜10.13. is a comparative example outside the range. In addition, No. 14 and No. 17 have a very low sintering temperature and a very high sintering temperature, respectively.

In Table 2 N 0.1-5, AIAl20a5%, TiQ2S
This is a case where YzOs is added by wt% and the amount of YzOs is changed.

In N011, which has a small amount of Y2O31, the relative density is almost as high as the theoretical density, and the crystal grain size is fine, but the cutting resistance is significantly larger than in other cases, so it is not suitable as a substrate material. If Y2O3 is increased, the cutting resistance will decrease, but if it is too large, like N095, the density will decrease rapidly.

No, 6~9ha, Y20s 15wt%, “rio
25 wt% was added to change Al2031. If the amount of AI 20s is small like N016,
The crystal grain size is large at 15-20 μm, whereas Al2O
As 3 is increased, the crystal grains become finer and chipping during cutting becomes smaller. However, if the amount is too large, the thermal expansion coefficient becomes small and the adhesion of the film deteriorates. .

No. 10 to 13 are Y20a15wt%, A1203
5 wt% was added and the amount of TiO2 was varied. When TtOzffi is small, sufficient sintered density cannot be obtained. If T102m increases, sufficient density will be obtained, but if it is too large, the coefficient of thermal expansion will become small and the hardness will also become small.

Nos. 14 to 17 are cases where the sintering temperature was changed. , the density is as low as 95% at 1200°C. At 1300°C, the m density becomes sufficient for HIP, but at 160°C
At temperatures above 0° C., even if AIzOa is added, the growth of crystal grains cannot be suppressed.

No. 18 to 21, MnO2 instead of Ti02,
S! 02, Fe 20s, etc., although there were differences in particle size and color of the sintered body, sufficient density was obtained in all cases.

[Brief explanation of drawings]

FIG. 1 is a perspective view of a magnetic head according to an embodiment of the present invention. FIGS. 2 and 3 are diagrams showing the detailed structure of the chip. 2... Slider 10... Boards 11-18...
・Metal magnetic layer 31...Gap 32...Glass joint part No.
1 Ward 1 ------- Magnetic head 2 --- Slider 3 --- Magnetic head chip 4, 5 --- Air pairing surface 6 ------- Slit 2nd Figure 10------1 Substrate 11.12-m-Metal magnetic layer 31--Gap 32--Glass joint 33--1 Winding window 3rd section 10----m=Substrates 13 to 18- Metal magnetic layers 19 to 22- Insulating layer 31--Gap 32--Glass joint 33--One winding window

Claims (11)

[Claims] (1) In a magnetic head having a magnetic core made of a metal magnetic material made by vapor deposition on a non-magnetic substrate, the metal magnetic material is a Co-based amorphous material, and the non-magnetic substrate is substantially stable. A thin film magnetic head characterized by being made of a zirconia chloride phase. (2) A thin film magnetic head according to claim 1, wherein the metal magnetic material is a Co-Nb-Zr amorphous material. (3) In the product described in claim 1 or 2, the non-magnetic substrate contains 10 to 10% of yttrium oxide.
30wt%, aluminum oxide 0.5-10wt%,
MnO_2, TiO_2, SiO_2 and Fe_2O
_0.2-10wt% of at least one of 3
1. A thin film magnetic head characterized in that the remainder is substantially zirconium oxide. (4) In the product described in claim 3, the ceramic substrate has a thermal expansion coefficient of 90 to 110×10^-^7.
A thin film magnetic head characterized in that the temperature is ℃^-^1. (5) In the product described in claim 4, the ceramic substrate has a thermal expansion coefficient of 95 to 105×10^-^7.
A thin film magnetic head characterized by a temperature of ℃＾-＾1. (6) In the item described in claim 1 or 2, the metal magnetic material is Ti, V, Cr, Mn.
4 to 20 at% in total of at least one element selected from , Nb, and Ta, 2 to 10 at% in total of at least one of Zr and Hf, and at least one of metalloids B, C, Si, P, and S. A thin film magnetic head comprising a total of 3 at% or less (including 0) of Co, with the remainder substantially consisting of Co. (7) In the item described in claim 6, the amorphous soft magnetic material contains at least one element selected from Ti, Nb, and Ta in a total of 5 to 15 at%, Zr, and H.
A total of 2 to 6 at% of at least one of metalloids B, C, Si, P, and S, and a total of 3 at% of at least one of metalloids B, C, Si, P, and S.
A thin film magnetic head characterized in that the remainder is substantially made of Co. (8) In the product described in claim 7, at least one of B and Si is used as the metalloid element in a total of 3
A thin film magnetic head characterized in that it contains at % or less. (9) In the item described in claim 6, the amorphous soft magnetic material contains a total of 5 to 15 at% of at least one element selected from Ti, Nb, and Ta, and at least one of Zr and Hf. 1. A thin film magnetic head comprising a total of 2 to 6 at% of seeds, with the remainder being substantially Co. (10) In the item described in claim 9, the amorphous soft magnetic material contains 5 to 15 at% of Nb and 2 to 6 at% of at least one of Zr and Hf in total, and the balance is substantially Co. A thin film magnetic head characterized by comprising: (11) In the item described in claim 9, the amorphous soft magnetic material contains Nb of 5 to 15 at%, less than 5 at% of Zr, and less than 2 at% of Hf for a total of 2
A thin film magnetic head characterized in that it contains ~6 at% of Co, with the remainder being essentially Co.