JPS63293710A - Magnetic head - Google Patents
Magnetic headInfo
- Publication number
- JPS63293710A JPS63293710A JP13093187A JP13093187A JPS63293710A JP S63293710 A JPS63293710 A JP S63293710A JP 13093187 A JP13093187 A JP 13093187A JP 13093187 A JP13093187 A JP 13093187A JP S63293710 A JPS63293710 A JP S63293710A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- film
- substrate
- magnetic head
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 230000005415 magnetization Effects 0.000 claims abstract description 6
- 229910018125 Al-Si Inorganic materials 0.000 claims abstract 9
- 229910018520 Al—Si Inorganic materials 0.000 claims abstract 9
- 230000003746 surface roughness Effects 0.000 claims description 10
- 229910000859 α-Fe Inorganic materials 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 4
- 230000035699 permeability Effects 0.000 abstract description 19
- 238000004544 sputter deposition Methods 0.000 abstract description 13
- 238000000034 method Methods 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 238000007740 vapor deposition Methods 0.000 abstract 2
- 229910021364 Al-Si alloy Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 23
- 239000007789 gas Substances 0.000 description 12
- 239000010409 thin film Substances 0.000 description 12
- 229910045601 alloy Inorganic materials 0.000 description 9
- 239000000956 alloy Substances 0.000 description 9
- 239000010410 layer Substances 0.000 description 9
- 229910001004 magnetic alloy Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000004907 flux Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 229910000702 sendust Inorganic materials 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- 229910020630 Co Ni Inorganic materials 0.000 description 1
- 229910002440 Co–Ni Inorganic materials 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001308 Zinc ferrite Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910001566 austenite Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000700 radioactive tracer Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- WGEATSXPYVGFCC-UHFFFAOYSA-N zinc ferrite Chemical compound O=[Zn].O=[Fe]O[Fe]=O WGEATSXPYVGFCC-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は磁気ヘッドに係り、特にFe−Al2Si系磁
性膜を有する磁気ヘッドに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a magnetic head, and particularly to a magnetic head having a Fe-Al2Si magnetic film.
[従来の技術]
磁気記録の分野においては、高密度化に向けての検討が
、媒体・ヘッドの両方から精力的に進められている。媒
体は、従来のγ−F e 203からCo−Ni系合金
やCo−Cr系合金等の金属材料、あるいはBaフェラ
イト等の酸化物材料が検討され、作製法も塗布法に加え
、メッキ法・スパッタ法等の薄膜形成法が用いられるな
ど多様化しながら、高性能化への対応が行われている。[Prior Art] In the field of magnetic recording, studies toward higher density are being actively pursued in terms of both media and heads. For the medium, metal materials such as Co-Ni alloy and Co-Cr alloy, as well as oxide materials such as Ba ferrite, in addition to the conventional γ-Fe 203, have been considered, and manufacturing methods include coating, plating, and Efforts are being made to improve performance by diversifying the use of thin film forming methods such as sputtering.
一般的に高密度化を行うためには、記録波長を短くして
行くこと、記録周波数を上げて行くこと、記録トラック
幅を狭くしていくことが大きな要件として挙げられる。In general, in order to achieve higher density, the major requirements are to shorten the recording wavelength, increase the recording frequency, and narrow the recording track width.
そのため、媒体としては、高保磁力化・高飽和磁束密度
化・媒体厚さを薄くすること・磁化方向の変更等で対応
して行く。これに対し、磁気ヘッドは、狭ギャップ化・
狭トラツク化の方向で対応しているが、従来のフェライ
トヘッドでは、飽和磁束密度が5000G程度であるこ
とから、媒体を飽和させるのに充分なヘッド磁界を発生
できない状況になってきている。Therefore, the media will be addressed by increasing the coercive force, increasing the saturation magnetic flux density, reducing the thickness of the medium, changing the magnetization direction, etc. In contrast, magnetic heads have narrower gaps and
Although attempts have been made to narrow the track, conventional ferrite heads have a saturation magnetic flux density of approximately 5000 G, and are no longer able to generate a head magnetic field sufficient to saturate the medium.
そこで、コンピュータ記録再生磁気ヘッド、VTRテー
プの位置決め用磁気センサ、PCM録音テープ用ヘッド
、電子カメラ用ヘッドなどの高密度記録用磁気ヘッドと
して従来のフェライト及びセンダストバルク材を使用し
たヘッドに変わって薄膜を利用した磁気ヘッドが注目さ
れている。Therefore, instead of conventional heads using ferrite and sendust bulk materials, thin film magnetic heads were used for high-density recording magnetic heads such as computer recording/reproducing magnetic heads, VTR tape positioning magnetic sensors, PCM recording tape heads, electronic camera heads, etc. Magnetic heads that utilize this are attracting attention.
発明者らは、この磁気ヘッドに使用されるFe−AIL
Si系合金膜について検討を進めている。この合金系は
、バルク材ではセンダストと呼ばれ、高性能軟磁性材料
として知られているが、薄膜という形態をとった場合に
は、従来バルク材での特性が得られていなかった。これ
に対し、特開昭60−218820号公報にはN2ガス
を含む不活性ガス中でのスパッタリングにより得られる
Fe−AlSi系合金薄膜が高透磁率を有し、また飽和
磁束密度を低下することなく高硬度を有することが記載
されている。The inventors discovered Fe-AIL used in this magnetic head.
We are currently investigating Si-based alloy films. This alloy system is called sendust in bulk material and is known as a high-performance soft magnetic material, but when it is in the form of a thin film, it has not been able to achieve the characteristics of conventional bulk materials. On the other hand, Japanese Patent Application Laid-Open No. 60-218820 discloses that a Fe-AlSi alloy thin film obtained by sputtering in an inert gas containing N2 gas has high magnetic permeability and lowers the saturation magnetic flux density. It is described that it has high hardness.
[発明が解決しようとする問題点]
上記特開昭60−218820号では、5〜6μm程度
の厚さのFe−AILSi膜については、透磁率μm5
000程度を得ている。しかしながら、本発明者が種々
検討したところ、3μm程度の薄い膜では透磁率μがか
なり低下することが認められた。[Problems to be Solved by the Invention] In the above-mentioned Japanese Patent Application Laid-Open No. 60-218820, for a Fe-AILSi film with a thickness of about 5 to 6 μm, the magnetic permeability is μm5.
I got about 000. However, as a result of various studies conducted by the present inventors, it has been found that the magnetic permeability .mu. decreases considerably in a thin film of about 3 .mu.m.
[問題点を解決するための手段及び作用]本発明は基板
面上にFe−AIL−Si系磁性膜を蒸着して作った磁
気コアを有する磁気ヘッドにおいて、上記Fe−AjZ
−St系磁性膜を主磁路の方向とほぼ垂直方向を容易磁
化方向としたことを特徴とする磁気ヘッドである。[Means and effects for solving the problems] The present invention provides a magnetic head having a magnetic core made by depositing an Fe-AIL-Si magnetic film on a substrate surface.
- This is a magnetic head characterized in that the easy magnetization direction of the St-based magnetic film is approximately perpendicular to the direction of the main magnetic path.
かかる本発明によれば、膜厚が小さくとも透磁率の高い
磁性膜を有する磁気ヘッドが提供される。According to the present invention, there is provided a magnetic head having a magnetic film having high magnetic permeability even if the film thickness is small.
以下に、本発明について更に詳細に説明する。The present invention will be explained in more detail below.
第1図は本発明の磁気ヘッドの一実施例の概略図である
。磁気へラド1は非磁性スライダー2とチップ3とから
なり、チップ3はスライダー2と2本の空気ベアリング
面4.5の一方の面4に形成されたスリット6中に、ガ
ラス等でモールド固定されている。FIG. 1 is a schematic diagram of an embodiment of the magnetic head of the present invention. The magnetic helad 1 consists of a non-magnetic slider 2 and a tip 3, and the tip 3 is molded and fixed with glass or the like in a slit 6 formed in one side 4 of the slider 2 and two air bearing surfaces 4.5. has been done.
チップ3の一例の詳細な構造を第2.3図に示す。第2
.3図において、非磁性基板よりなるコア10上にスパ
ッタ膜が形成されており、このスパッタ膜は、磁性合金
層11〜13.14〜16と絶縁層17〜18.19〜
20とが交互に積層した構造となっている。一対のチッ
プ部材は、ギャップ21を有するように、磁性合金層1
3と16との面でガラス接合されている。22はガラス
接合部を示す。また、巻線窓23に所定の巻線が施され
る。A detailed structure of an example of the chip 3 is shown in FIG. 2.3. Second
.. In FIG. 3, a sputtered film is formed on a core 10 made of a non-magnetic substrate, and this sputtered film includes magnetic alloy layers 11-13, 14-16 and insulating layers 17-18, 19-
20 are alternately stacked. The pair of chip members has a magnetic alloy layer 1 so as to have a gap 21.
3 and 16 are glass-bonded. 22 indicates a glass joint. Further, a predetermined winding is applied to the winding window 23.
本発明において、Fe−Alt、−Si系磁性膜として
は、重量%にてAρ2〜10%、Si:3〜16%、残
部実質的にFeであるものが好適であり、特にAl:4
〜8%、Si:6〜11%、残部実質的にFeであるも
のが好適である。なお、Ti%Ruをそれぞれ2%以下
ずつ含んでいても、耐食性、耐摩耗性を向上させること
ができ、好適である。また、Crを4%以下含んでいて
も同様の効果が得られる。In the present invention, it is preferable that the Fe-Alt, -Si-based magnetic film is composed of Aρ2 to 10%, Si: 3 to 16%, and the remainder substantially Fe, particularly Al: 4% by weight.
-8%, Si: 6-11%, and the balance is preferably Fe. Note that even if Ti%Ru is contained in an amount of 2% or less, corrosion resistance and wear resistance can be improved, which is preferable. Further, the same effect can be obtained even if Cr is contained in an amount of 4% or less.
このFe−AILSi系磁性膜は、−軸異方性が付与さ
れるようにスパッタリング等の気相蒸着法により基板面
上に形成される。このように−軸異方性を付与するため
の例としては、
■ 基板表面粗さを0. 1 μm (100OA)
以下、とりわけ0.06μm以下とする。This Fe-AILSi magnetic film is formed on the substrate surface by a vapor phase deposition method such as sputtering so as to impart −axis anisotropy. Examples of how to impart -axis anisotropy in this way include: (1) Setting the substrate surface roughness to 0. 1 μm (100OA)
Hereinafter, the thickness is particularly set to 0.06 μm or less.
■ 基板表面に磁界を印加しながらスパッタリングする
。■ Sputtering while applying a magnetic field to the substrate surface.
■ マグネトロンスパッタリングの漏れ磁界を利用して
基板表面に磁界を形成する。■ A magnetic field is created on the substrate surface using the leakage magnetic field of magnetron sputtering.
のいずれかの手法によれば良い。また、■と■の併用又
は■と■の併用によっても良い。Any one of these methods may be used. Further, a combination of ■ and ■ or a combination of ■ and ■ may also be used.
即ち、本発明者は、Ar等の不活性ガスとN2ガスとの
混合ガスを使用したスパッタ膜形成法で好ましくは表面
粗さを0.1μm以下におさえた下地基板の上に膜形成
を行った後、400〜750℃の温度範囲で熱処理する
ことにより、センダスト膜に一軸異方性が付与できるこ
とを見出した。That is, the present inventor preferably formed a film on a base substrate with a surface roughness of 0.1 μm or less by a sputtering film formation method using a mixed gas of an inert gas such as Ar and N2 gas. It has been found that uniaxial anisotropy can be imparted to the sendust film by heat-treating it at a temperature range of 400 to 750°C.
ArガスにN2ガスを添加した雰囲気でスパッタ法によ
りFe−Ajl−St’系合金膜を形成した場合には、
ArへのN2の添加量を0.1〜5.0voJZ%、好
ましくは、0. 2〜1. 0vofL%に制御するこ
とで熱処理後の膜のHeが低下し、透磁率が大きく向上
する。しかし、膜付する下地基板の表面粗さが0.1μ
mを超える場合には、−軸異方性が誘起されず、そのB
−H曲線は等方向となっている。そのため透磁率は20
00程度である。しかし、表面粗さが0.1μm以下に
なると、−軸異方性が誘起されるために、困難軸方向の
透磁率が増加し、4000程度まで増加する。When a Fe-Ajl-St' alloy film is formed by sputtering in an atmosphere in which N2 gas is added to Ar gas,
The amount of N2 added to Ar is 0.1 to 5.0 voJZ%, preferably 0. 2-1. By controlling it to 0 vofL%, the He content of the film after heat treatment is reduced and the magnetic permeability is greatly improved. However, the surface roughness of the base substrate to which the film is attached is 0.1μ.
If it exceeds m, -axis anisotropy is not induced and its B
-H curves are isodirectional. Therefore, the magnetic permeability is 20
It is about 00. However, when the surface roughness becomes 0.1 μm or less, -axis anisotropy is induced, so the magnetic permeability in the difficult axis direction increases to about 4000.
この原因は明らかではないが、N2ガスが結晶の配向性
をわずかながら改善する効果があり、かつ下地基板の面
粗さを小さくすることで、上記N2の効果が現われてく
るものと考えられる。Although the cause of this is not clear, it is thought that N2 gas has the effect of slightly improving crystal orientation, and that the effect of N2 appears by reducing the surface roughness of the underlying substrate.
本発明では、上記の如く磁化困難性軸方向の透磁率が高
いので、この−軸異方性を有する磁性膜は、磁化容易軸
方向が主磁路の方向とほぼ垂直(例えば70〜1100
の範囲)となるように形成する。In the present invention, since the magnetic permeability in the direction of the hard magnetization axis is high as described above, the magnetic film having this -axis anisotropy has an easy axis direction almost perpendicular to the direction of the main magnetic path (for example, 70 to 1100
range).
本発明において、透磁率の周波数特性を向上するために
、スパッタ薄膜は多層とするのが望ましい。この場合、
各磁性合金層間に酸化珪素等の絶amを介在させる。絶
縁層が磁性合金層の1/20以下であれば磁気抵抗は充
分に小さく、また0、02μm以上であれば充分が絶縁
が得られる。一般に絶縁層の厚さは0.01〜1.0μ
m1好ましくは0.05〜0.2μmである。In the present invention, in order to improve the frequency characteristics of magnetic permeability, it is desirable that the sputtered thin film be multilayered. in this case,
A magnetic material such as silicon oxide is interposed between each magnetic alloy layer. If the insulating layer is 1/20 or less of the magnetic alloy layer, the magnetic resistance is sufficiently small, and if it is 0.02 μm or more, sufficient insulation can be obtained. Generally, the thickness of the insulating layer is 0.01~1.0μ
m1 is preferably 0.05 to 0.2 μm.
第2図は3層の磁性合金層を有するスパッタ薄膜を示し
ているが、2層、4層又はそれ以上のものも必要に応じ
使用することができる。Although FIG. 2 shows a sputtered thin film having three magnetic alloy layers, two, four, or more layers can be used if desired.
スパッタリングにより磁性合金薄膜を形成した磁気ヘッ
ドに、透磁率を向上させるために、熱処理を施すのが好
ましい。熱処理は真空中または不活性ガス中で好ましく
は400〜750℃、特に好ましくは500〜700℃
の温度で0.3時間〜2時間、好ましくは0.5〜1時
間行う。熱処理をガラス接合と同時に行ってもよい。か
かる熱処理により、構造は、不規則α相から規則DO3
相への変態をおこし、それに伴ない、磁気特性が改善さ
れる。In order to improve magnetic permeability, it is preferable to heat-treat a magnetic head on which a magnetic alloy thin film is formed by sputtering. The heat treatment is preferably carried out in vacuum or in an inert gas at 400 to 750°C, particularly preferably at 500 to 700°C.
The treatment is carried out at a temperature of 0.3 to 2 hours, preferably 0.5 to 1 hour. Heat treatment may be performed simultaneously with glass bonding. Through such heat treatment, the structure changes from the disordered α phase to the ordered DO3
A phase transformation occurs, and the magnetic properties are improved accordingly.
本発明において基板としては磁性基板、非磁性基板のい
ずれでも良い。In the present invention, the substrate may be either a magnetic substrate or a nonmagnetic substrate.
磁性基板としてはMn−Znフェライト等の磁性フェラ
イトが一例として挙げられる。また、非磁性基板として
はチタン酸バリウム、チタン酸カルシウム、アルミナ、
亜鉛フェライト、ガラス等のばか特公昭56−2173
2、特開昭59−908にて公知とされたもの、あるい
はMn0−Ni0系セラミツクなどが挙げられる。An example of the magnetic substrate is a magnetic ferrite such as Mn-Zn ferrite. In addition, non-magnetic substrates include barium titanate, calcium titanate, alumina,
Baka Special Publication for Zinc Ferrite, Glass, etc. 1973-2173
2. Examples include those known in Japanese Patent Application Laid-Open No. 59-908, Mn0-Ni0 ceramics, and the like.
これらの基板は、表面の鏡面仕上げ処理を行って前記の
表面粗さとする。The surfaces of these substrates are mirror-finished to achieve the above-mentioned surface roughness.
[実施例] 以下、実施例及び比較例について説明する。[Example] Examples and comparative examples will be described below.
直径76mm、厚さ2mmのFe、AJ2及びStを含
有する合金ターゲットを用い、下記のスパッタ条件に従
ってマグネトロンスパッタ法によるスパッタリングを行
い、Fe−AX−St系磁性膜をMn0−Ni0某セラ
ミツク基板又は結晶化ガラス基板上に形成した。その表
面粗さは、第1表に示す通りである。Using an alloy target containing Fe, AJ2, and St with a diameter of 76 mm and a thickness of 2 mm, sputtering was performed by the magnetron sputtering method according to the sputtering conditions below, and a Fe-AX-St based magnetic film was sputtered onto a Mn0-Ni0 certain ceramic substrate or crystal. It was formed on a chemically modified glass substrate. The surface roughness is as shown in Table 1.
なお、基板の面方向に、マグネトロンターゲットの漏れ
磁界を利用して磁界を加えた。Note that a magnetic field was applied in the plane direction of the substrate using the leakage magnetic field of the magnetron target.
RFパワー 400w
ターゲット基板間距離 76cm
基本温度 〜70℃(水冷)
到達真空度 4X10−’Paガス圧力
7X10−’Pa
磁性1Iilli厚 約1μmなお、スパ
ッタリング雰囲気はAr+N2とし、N2ガスの混入量
は分圧で制御した。得られたFe−AIL−Ni系合金
膜を400〜800℃の雰囲気の所定の温度で1時間熱
処理し、保磁力及び透磁率を測定した。結果を第1表に
示す。RF power 400w Distance between target substrates 76cm Basic temperature ~70℃ (water cooling) Ultimate vacuum 4X10-'Pa gas pressure
7X10-'Pa Magnetic 1Illi thickness Approximately 1 μm The sputtering atmosphere was Ar+N2, and the amount of N2 gas mixed was controlled by partial pressure. The obtained Fe-AIL-Ni alloy film was heat-treated at a predetermined temperature in an atmosphere of 400 to 800° C. for 1 hour, and its coercive force and magnetic permeability were measured. The results are shown in Table 1.
なお、透磁率及び保磁力は、それぞれフェライトヨーク
及びB−Hループトレーサにて測定を行った。Note that the magnetic permeability and coercive force were measured using a ferrite yoke and a B-H loop tracer, respectively.
この第1表により、N20.5voA%含むArガス中
でのスパッタリングにより得られるFe−AfSi系合
金薄膜は、表面粗さが100OA以下の基板を用いた場
合のみ一軸異方性を示し、透磁率が400等の優れた特
性を示すのに対し、表面粗さが、1tooAより大きな
基板を用いた場合には、−軸異方性を示さずその時の透
磁率は1800以下であることが認められる。According to Table 1, the Fe-AfSi alloy thin film obtained by sputtering in Ar gas containing 0.5 voA% N2 exhibits uniaxial anisotropy only when a substrate with a surface roughness of 100 OA or less is used, and the magnetic permeability shows excellent properties such as 400, whereas when a substrate with surface roughness greater than 1 tooA is used, it is recognized that -axis anisotropy is not shown and the magnetic permeability is 1800 or less. .
第1表
また、1.0vojZ%以上N2を含むArガスあるい
は全<N2ガスを含まないArガス中でスパッタリング
により得られたFe−Al1−Ni系合金薄膜は一軸異
方性を示さないことが認められる。Table 1 also shows that Fe-Al1-Ni alloy thin films obtained by sputtering in Ar gas containing 1.0vojZ% or more of N2 or in Ar gas containing no N2 gas do not exhibit uniaxial anisotropy. Is recognized.
なお、実施例1.6及び比較例2.3の試料について実
効透磁率μaffの周波数特性を測定した。また、実施
例1、比較例2の試料のBH特性を測定した。これらの
結果を第4〜6図に示す。Note that the frequency characteristics of the effective magnetic permeability μaff were measured for the samples of Example 1.6 and Comparative Example 2.3. In addition, the BH characteristics of the samples of Example 1 and Comparative Example 2 were measured. These results are shown in Figures 4-6.
第4〜6図より、本発明例のものは透磁率が高く、BH
特性にも優れることが認められる。From Figures 4 to 6, the examples of the present invention have high magnetic permeability and BH
It is recognized that the properties are also excellent.
また、比較例1、実施例1の膜を使用して作ったヘッド
の特性を第7図に示す。これよりヘッドの出力電圧が1
0%向上することがわかる。Further, characteristics of heads made using the films of Comparative Example 1 and Example 1 are shown in FIG. From this, the output voltage of the head is 1
It can be seen that the improvement is 0%.
[効果]
本発明によれば、膜厚が小さくとも高い透磁率を有する
Fe−Al−St系合金薄膜を有する磁気ヘッドが提供
される。この合金薄膜は、例えば4μm以下と極めて薄
くできるから、多層化が容易であり、高密度磁気記録用
として極めて好適なものである。また、単層として使用
する場合にも薄膜化が図れるため、ヘッド生産という面
から考えると好適なものとなる。[Effects] According to the present invention, there is provided a magnetic head having an Fe-Al-St alloy thin film that has high magnetic permeability even if the film thickness is small. This alloy thin film can be made extremely thin, for example, 4 μm or less, so it can be easily multilayered and is extremely suitable for high-density magnetic recording. Further, even when used as a single layer, the film can be made thinner, which is preferable from the viewpoint of head production.
第1図は実施例に係る磁気ヘッドの斜視図、第2図及び
第3図は第1図の部分拡大図、第4図ないし第7図の各
図は実施例における測定結果を示すグラフである。
代 理 人 弁理士 重 野 剛第1図
1磁気ヘツド 2スライダー 3磁気へソドチップ4.
5空気ベアリング面 6スリツト
第2図
10基板
22ガラス接合部
第5図(a)
v45図(b)
第6図
第7図
分解能(・ム)FIG. 1 is a perspective view of the magnetic head according to the example, FIGS. 2 and 3 are partially enlarged views of FIG. 1, and each of FIGS. 4 to 7 is a graph showing the measurement results in the example. be. Agent Patent Attorney Tsuyoshi Shigeno Figure 1 1 Magnetic head 2 Slider 3 Magnetic tip 4.
5 Air bearing surface 6 Slit Fig. 2 10 Substrate 22 Glass joint Fig. 5 (a) v45 Fig. (b) Fig. 6 Fig. 7 Resolution (・mu)
Claims (6)
磁気コアを有する磁気ヘッドにおいて、上記Fe−Al
−Si系磁性膜を主磁路の方向とほぼ垂直方向を容易磁
化方向としたことを特徴とする磁気ヘッド。(1) In a magnetic head having a magnetic core with a Fe-Al-Si magnetic film deposited on the substrate surface, the Fe-Al-Si
- A magnetic head characterized in that the easy magnetization direction of the Si-based magnetic film is approximately perpendicular to the direction of the main magnetic path.
0重量%、Si:3〜16重量%、残部実質的にFeで
あることを特徴とする特許請求の範囲第1項に記載の磁
気ヘッド。(2) The composition of the Fe-Al-Si magnetic film is Al: 2 to 1
2. The magnetic head according to claim 1, wherein the magnetic head comprises: 0% by weight, Si: 3-16% by weight, and the remainder substantially Fe.
粗さが0.1μm以下であることを特徴とする特許請求
の範囲第1項又は第2項に記載の磁気ヘッド。(3) The magnetic head according to claim 1 or 2, wherein the surface roughness of the substrate surface to which the Fe-Al-Si magnetic film is attached is 0.1 μm or less.
許請求の範囲第1項から第3項のいずれか1項に記載の
磁気ヘッド。(4) The magnetic head according to any one of claims 1 to 3, wherein the substrate is made of magnetic ferrite.
する特許請求の範囲第4項に記載の磁気ヘッド。(5) The magnetic head according to claim 4, wherein the substrate is Mn-Zn ferrite.
ら第3項のいずれか1項に記載の磁気ヘッド。(6) The magnetic head according to any one of claims 1 to 3, wherein the substrate is made of a nonmagnetic material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13093187A JPS63293710A (en) | 1987-05-27 | 1987-05-27 | Magnetic head |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13093187A JPS63293710A (en) | 1987-05-27 | 1987-05-27 | Magnetic head |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63293710A true JPS63293710A (en) | 1988-11-30 |
Family
ID=15046059
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13093187A Pending JPS63293710A (en) | 1987-05-27 | 1987-05-27 | Magnetic head |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63293710A (en) |
-
1987
- 1987-05-27 JP JP13093187A patent/JPS63293710A/en active Pending
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