JPS61136203A - Manufacture of thermal head - Google Patents
Manufacture of thermal headInfo
- Publication number
- JPS61136203A JPS61136203A JP59259490A JP25949084A JPS61136203A JP S61136203 A JPS61136203 A JP S61136203A JP 59259490 A JP59259490 A JP 59259490A JP 25949084 A JP25949084 A JP 25949084A JP S61136203 A JPS61136203 A JP S61136203A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- heating resistor
- layer
- etching
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000010438 heat treatment Methods 0.000 claims abstract description 26
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 239000010703 silicon Substances 0.000 claims abstract description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 11
- 239000001301 oxygen Substances 0.000 claims abstract description 11
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims abstract description 10
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 7
- 239000011259 mixed solution Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 abstract description 33
- 239000010409 thin film Substances 0.000 abstract description 25
- 239000011521 glass Substances 0.000 abstract description 15
- 235000011114 ammonium hydroxide Nutrition 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 abstract description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052802 copper Inorganic materials 0.000 abstract description 2
- 229910052737 gold Inorganic materials 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 238000010292 electrical insulation Methods 0.000 abstract 2
- 230000003449 preventive effect Effects 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 239000000243 solution Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 5
- 230000002265 prevention Effects 0.000 description 5
- 235000014121 butter Nutrition 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000007261 regionalization Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- BDDLHHRCDSJVKV-UHFFFAOYSA-N 7028-40-2 Chemical compound CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O BDDLHHRCDSJVKV-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910020489 SiO3 Inorganic materials 0.000 description 1
- 229910004479 Ta2N Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 102220043690 rs1049562 Human genes 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910001868 water Inorganic materials 0.000 description 1
Landscapes
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Non-Adjustable Resistors (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Electronic Switches (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、サーマルヘッドの製造方法に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method of manufacturing a thermal head.
従来の技術
従来の薄膜型サーマルヘッドでは、第３図ａに示すよう
に、アルミナ等のセラミック基板１上に、平滑なガラス
層２を有するいわゆるグレーズド・アルミナ基板３が主
として用いられている０これは、この基板の強度、平滑
度、耐熱性等において、サーマルヘッドに要求される性
質を良く満たすとともに、他の材料、例えば、石英等と
比べると比較的安価であるためである。また、ガラス層
の厚さを適切にすることで、サーマルヘッドの熱応答速
度、熱効率を改善することができる。従ってガラス層２
は、必ず形成する必要がある。このグレーズドφアルミ
ナ基板３上に、特開昭５３−５１７５３号にある様に、
ガラス層２よりエツチングされに＜ い電％的絶ＲＪ４
．！： して、ＳｉＯ３，ＡＩｌ、□ｏ３゜Ｃｒ２Ｏ５
、５ｎ０２ 、５ｔ３Ｎ４． ＢＮ 、 ＳｉＣ等でな
る層を形成し、この上に薄膜発熱抵抗体５、導電性薄膜
層６，７を順次積層形成した後、例えば第３図すおよび
ｂの断面図Ｃに示す様に、配線バター／を形成する。2. Description of the Related Art In conventional thin film thermal heads, as shown in FIG. This is because this substrate satisfies the properties required for a thermal head in terms of strength, smoothness, heat resistance, etc., and is relatively inexpensive compared to other materials such as quartz. Furthermore, by making the thickness of the glass layer appropriate, it is possible to improve the thermal response speed and thermal efficiency of the thermal head. Therefore glass layer 2
must be formed. On this glazed φ alumina substrate 3, as described in Japanese Patent Application Laid-Open No. 53-51753,
Etched from glass layer 2.
．． ! : SiO3, AIl, □o3゜Cr2O5
, 5n02, 5t3N4. After forming a layer made of BN, SiC, etc., and sequentially laminating a thin film heating resistor 5 and conductive thin film layers 6 and 7 thereon, for example, as shown in cross-sectional view C in FIGS. Form wiring butter/.
ところで、通常薄膜発熱抵抗体５としては、Ｔａ２Ｎ
、 Ｔａ−８ＬＯ３，Ｃｒ−３Ｌ−０および、チタン炭
化物、珪素、＃素でなるものがあるが、これらは、すべ
てへ通常用いるエツチング液としてＨＦ＋ＨＮｏ３系エ
ツチング液により除去するため、眠気的絶縁層４を形成
せずにこれら薄膜発熱抵抗体５を直接ガラス層２上に形
成し、第３図す、ｃに示す様にパターン形成を行なった
際、同図ｄに示す様に、ガラス層２の表面が８のように
侵され（エツチングされ）、これは、薄膜発熱抵抗体６
、導電性薄膜層６，７が形成されている部分のガラス層
２までを侵し、これにより、薄膜発熱抵抗体６の下部が
エツチングされ、精度良く抵抗値を制御することが困難
で、また発熱体としての寿命も劣化し、加えて、外部回
路との接続、例えば、ボ／ディ／グ等をする際の強度が
もたない等の問題が生じた。従って従来、電気絶縁層４
は、エツチング防止層として必要であった。この電気的
絶縁層４は、上に述べたエツチング防止層としての効果
以外、特に積極的な意味はなく、また通常、発熱抵抗体
と同一の装置で連続的に形成するため、電気的絶縁層４
を形成した際の残留不純物が、それに続く発熱抵抗体に
影響を与えることがあり、工程的にも複雑になるなどの
問題があった。By the way, the thin film heating resistor 5 is usually made of Ta2N.
, Ta-8LO3, Cr-3L-0, and those made of titanium carbide, silicon, and # elements, but these are all removed by a HF+HNo3-based etching solution as a commonly used etching solution, so the drowsy insulating layer 4 When these thin film heat generating resistors 5 are formed directly on the glass layer 2 without forming a pattern, and a pattern is formed as shown in FIG. 3C, as shown in FIG. The surface is eroded (etched) as shown in 8, which is the thin film heating resistor 6.
, it corrodes the glass layer 2 where the conductive thin film layers 6 and 7 are formed, and as a result, the lower part of the thin film heating resistor 6 is etched, making it difficult to accurately control the resistance value and causing heat generation. The lifespan of the device deteriorated, and in addition, there were problems such as a lack of strength when connecting to an external circuit, for example, when connecting the device to a body/body/engine. Therefore, conventionally, the electrical insulating layer 4
was necessary as an etching prevention layer. This electrically insulating layer 4 has no particular positive meaning other than the effect as an etching prevention layer mentioned above, and since it is normally formed continuously in the same device as the heating resistor, the electrically insulating layer 4 4
The remaining impurities during the formation of the heat generating resistor may affect the subsequent heat generating resistor, and the process becomes complicated.
以上のような問題の中で、特に感熱記録を高速化するた
めには、チタン炭化物、珪素、酸素でなる薄膜発熱抵抗
体を用いることで大きな効果が得られる。Among the above-mentioned problems, particularly in order to speed up heat-sensitive recording, a great effect can be obtained by using a thin film heating resistor made of titanium carbide, silicon, and oxygen.
発明が解決しようとする問題点
上述した様に、サーマルヘッドの高速化のために、テタ
／炭化物、珪素、酸素でなる薄膜発熱抵抗体を用いる際
、パターン形成に従来のＨＦ＋ＨＮｏ３系エツチング液
を用いると、基板表面にコーティングしであるガラス層
がエツチングされ、種々の問題を引き起こすため、電気
的絶縁なエツチング防止層を、ガラス層と前記薄膜発熱
抵抗体の間に、形成する必要があった。Problems to be Solved by the Invention As mentioned above, when using a thin film heating resistor made of teta/carbide, silicon, and oxygen to increase the speed of a thermal head, it is necessary to use a conventional HF+HNo3-based etching solution for pattern formation. In this case, the glass layer coating the substrate surface is etched, causing various problems. Therefore, it is necessary to form an electrically insulating etching prevention layer between the glass layer and the thin film heating resistor.
かかる点から、本発明は、サーマルヘッドの高速化のた
めのチタン炭化物、珪素、酸素でなる薄膜発熱抵抗体を
用い、かつこれを適切なエツチング液を用いることによ
り、電気的絶縁なエツチング防止層を不要とするサーマ
ルヘッドの製造方法を提供することを目的とするもので
ある。From this point of view, the present invention uses a thin film heating resistor made of titanium carbide, silicon, and oxygen to increase the speed of a thermal head, and uses an appropriate etching solution to form an electrically insulating anti-etching layer. The object of the present invention is to provide a method for manufacturing a thermal head that does not require the following steps.
問題点を解決するための手段
本発明は、上記問題点を解決するために、チタ
！ン炭化物と珪素、酸素でなる発熱抵抗体を、ア
ンモニア水と過酸化水素水を主成分とし、混合した溶液
で、エツチングし、パターン形成をするサーマルヘッド
の製造方法である。Means for Solving the Problems In order to solve the above-mentioned problems, the present invention utilizes several techniques.
! This is a method for manufacturing a thermal head in which a heating resistor made of carbon carbide, silicon, and oxygen is etched and patterned using a mixed solution containing aqueous ammonia and hydrogen peroxide as main components.
作 用
上述した構成で、チタン炭化物と珪素、酸素でなる発熱
抵抗体は、アンモニア水と過酸化水素水を主成分とする
混合液で、安定にエツチングでき良好なバター７形成が
でき、また、前記混合液は、ガラスを侵さないため、電
気的絶縁なエツチング防止層を形成しなくとも、良好な
パターン形成が可能で、工程の簡略化ができ、またＨＦ
など人体に極めて有害な溶液を使わずに、安全面におい
ても優れ、実用上極めて有効な、サーマルヘッドの第１
図に、本発明のサーマルヘッドの製造方法の基本構成例
を示す。同図ａに示す様に、例えば、アルミナ基板９上
に、ガラスグレイズ層１０を形成したいわゆるグレイズ
ド・アルミナ基板１１上に、チタ／炭化物、珪素、酸素
でなる発熱抵抗体として、Ｔ ｉｃ −８ｉｏ２薄膜発
熱抵抗体１２を形成し、この上に、導電性薄膜層として
例えば２層でなるものを形成する。このうち、第１導電
性薄膜層１３をＣｒ とし、第２導電性薄膜層１４を、
ＡｕまたはＣｕとして、順次積層形成した後、例えば、
同図すに示すように配線パターンを形成する。この際、
Ｔｉｃ−３ｉｎ２薄膜発熱抵抗体１２を、アンモニア水
と過酸化水素水を主成分として混合した溶液としてＮＨ
２ＯＨ：Ｈ２Ｏ２：ＥＤＴＡ（エチレンジアミ／四酢酸
） ： Ｈ２０＝２４ｃａ ： ７ ＢＣｌｌ ： ３
ｉ ：１２０ｍのものを用い、エツチングを行なった。Function With the above-mentioned configuration, the heating resistor made of titanium carbide, silicon, and oxygen can be stably etched with a mixed liquid containing aqueous ammonia and hydrogen peroxide as main components, and a good butter 7 can be formed. Since the mixed liquid does not attack glass, it is possible to form a good pattern without forming an electrically insulating etching prevention layer, and the process can be simplified.
The first thermal head that does not use solutions that are extremely harmful to the human body, is excellent in terms of safety, and is extremely effective in practice.
The figure shows an example of the basic configuration of the method for manufacturing a thermal head of the present invention. As shown in Figure a, for example, a Tic-8io2 heating resistor made of titanium/carbide, silicon, and oxygen is placed on a so-called glazed alumina substrate 11 in which a glass glaze layer 10 is formed on an alumina substrate 9. A thin film heating resistor 12 is formed, and a conductive thin film layer consisting of, for example, two layers is formed thereon. Among these, the first conductive thin film layer 13 is made of Cr, and the second conductive thin film layer 14 is made of Cr.
After sequentially forming layers as Au or Cu, for example,
A wiring pattern is formed as shown in the figure. On this occasion,
The Tic-3in2 thin film heat generating resistor 12 was prepared by using NH
2OH:H2O2:EDTA (ethylenediami/tetraacetic acid): H20=24ca: 7 BCll: 3
i: Etching was performed using a 120 m.
ここで、ＥＤＴＡは、キレート剤で、Ｈ２Ｏも、溶液を
薄めるためのもので、必ずしも必要というわけではない
０これにより、Ｔｉｃ−３ｉ○２薄膜発熱抵抗体は、良
好なバター７形成ができ、ガラスグレイズ層表面１６も
侵さず、信頼性の高いバター／形成が可能で、これによ
り、電気的絶縁なエツチング防止層を形成する必要はな
くなる。ところで、前記アンモニア水と過酸化水素水を
主成分とする溶液のエツチング特性１６を第１図Ｃに示
す。図で、横軸は、Ｔｉｃ−８ｉＯ□薄膜発熱抵抗体１
２が、ちょうどエツチングされる時間（＝ジャスコエッ
チング時間）に対する実エンチング時間の比をとり、縦
軸ハ、Ｔ ｉ Ｃ−Ｓ ｉ Ｏ２薄膜発熱抵抗体１２と
、このエツチング時のマスクとなる第１導電性薄膜（Ｏ
ｒ）１３のパターン巾の差で、Ｔｉｃ−３ｉｎ２薄膜発
熱抵抗体１２のサイドエツチング量を示している。同図
より、４倍エツチングしても、サイドエッチ量は、せい
ぜい、０．５μｍ程度で、通常の製造時は、せいぜい２
倍エツチング程度なので、殆んどサイドエツチングはな
く、極めて優れたエツチング特性を有していることがわ
かる０′実施例２
特に本発明は、昨今カラープリンタ等、画像面の品質向
上と、量産性の向上のため、例えば、特願昭５８−１２
８３１４号の様な場合、つまり第２図に示す通り、基板
１７の一端面１８にＴ １Ｃ−８１０□発熱抵抗体１９
を設け、これに通電するための分離電極２０を基板１７
の一主平面２１に形成し、共通電極２２を他の一生乎面
２３に形成する等、立体的なパターン形成が必要な場合
に特に有効で、この際、電極特に分離電極２０の形成異
常を防ぐため、少なくともガラスグレイズ層２４を、分
離電極２０およびＴｉＣ−８ｉｎ３発熱抵抗体１９を形
成する一主平面２１と端面１８に形成する必要があるが
、従来のＨＦ ＋ ＨＮｏ ３系エツチング液を用いた
場合、エツチング防止層を該ガラスグレイズ層２４を形
成する一生千面２１と端面１８に形成しなければならな
いため、生産性の向上にはつながらず、アンモニア水と
過酸化水素水を主成分として混合した溶液を用いて、は
じめて、それが達成できる。Here, EDTA is a chelating agent, and H2O is also used to dilute the solution and is not necessarily necessary.Thus, the Tic-3i○2 thin film heating resistor can form a good butter 7, It does not attack the surface 16 of the glass glaze layer and can be reliably formed, thereby eliminating the need for forming an electrically insulating anti-etching layer. By the way, the etching characteristics 16 of the solution mainly composed of aqueous ammonia and aqueous hydrogen peroxide are shown in FIG. 1C. In the figure, the horizontal axis is Tic-8iO□ thin film heating resistor 1
2 is the ratio of the actual etching time to the time for just etching (=Jusco etching time). Conductive thin film (O
r) The difference in pattern width of 13 indicates the amount of side etching of the Tic-3in2 thin film heating resistor 12. From the same figure, even if the etching is performed 4 times, the side etching amount is at most about 0.5 μm, and during normal manufacturing, the amount of side etching is at most 2 μm.
0' Example 2 It can be seen that there is almost no side etching as the etching is about double etching, and it has extremely excellent etching characteristics.In particular, the present invention has been developed to improve image quality and mass production in color printers etc. For example, in order to improve the
In a case like No. 8314, that is, as shown in FIG.
and a separation electrode 20 for supplying electricity to the substrate 17.
This is particularly effective when three-dimensional pattern formation is required, such as forming a common electrode 22 on one principal plane 21 and forming a common electrode 22 on the other principal plane 23. In order to prevent this, it is necessary to form at least the glass glaze layer 24 on the main plane 21 and end surface 18 that form the separation electrode 20 and the TiC-8in3 heating resistor 19. If the glass glaze layer 24 is formed by etching, an anti-etching layer must be formed on the surface 21 and the end surface 18 during the entire life forming the glass glaze layer 24, which does not lead to improvement in productivity. Only by using mixed solutions can this be achieved.
尚、本実施例１，２では、チタン炭化物、珪素。In Examples 1 and 2, titanium carbide and silicon were used.
酸素でなる発熱抵抗体として、ＴｉＣ−８ｉＯ９を用い
たが、アンモニア水と過酸化水素水を主成分とするエツ
チング液は、Ｔｉｃに作用するため、他に、 −ＴｉＣ
−３ｔ−３ｉｎ２等の組み合わせでも同様の効果を得る
ことができる。また、アンモニア水と過酸化水素水を主
成分とするエツチング液は必ずしも本実施例の混合比で
なくても良く、該発熱抵抗体の組成と組み合わせに応じ
て、適切な混合比を選べば、同様の効果が得られる。TiC-8iO9 was used as the heating resistor made of oxygen, but since the etching solution mainly composed of aqueous ammonia and hydrogen peroxide acts on Tic, -TiC
A similar effect can be obtained by a combination such as -3t-3in2. Furthermore, the etching solution whose main components are aqueous ammonia and aqueous hydrogen peroxide does not necessarily have to have the mixing ratio of this embodiment, and if an appropriate mixing ratio is selected depending on the composition and combination of the heating resistor, A similar effect can be obtained.
発明の効果
この様に、本発明は、サーマルへｙドの高速化のだめの
チタン炭化物と珪素、酸素でなる発熱抵抗体を、アンモ
ニア水と過酸化水素水を主成分とし、混合した溶液でエ
ツチングし、ノ（ターン形成することを特徴とするサー
マルヘッドの製造方法で、電気的絶縁なエツチング防止
層を形成しなくとも、良好なパターン形成が可能で工程
の簡略化ができると共に、安全性の高い製造工程を組む
ことができ、実用上極めて有効である。Effects of the Invention As described above, the present invention etches a heating resistor made of titanium carbide, silicon, and oxygen, which is necessary for increasing the speed of thermal heating, with a mixed solution mainly composed of aqueous ammonia and aqueous hydrogen peroxide. However, this method of manufacturing a thermal head is characterized by the formation of turns, which enables good pattern formation without forming an electrically insulating etching prevention layer, simplifies the process, and improves safety. It is possible to set up a high-quality manufacturing process and is extremely effective in practice.
第１図は、本発明のサーマルヘッドの製造方法例のうち
、特に、エツチングに関する改善を説明するための図へ
、第２図は、特に本発明が有効である一実施例を説明す
るための図、第３図は従来例の説明図である。
１６・・・・・・本発明のアンモニア水と過酸化水素水
を主成分とする混合液のエツチング特性の−例０代理人
の氏名 弁理士 中 尾 敏 男 ほか１名エッチ）フ
゛ｉ午間／シ←２Ｈ−ｙ手〉２”−１町（自））第２図
第３図FIG. 1 is a diagram for explaining an example of the method for manufacturing a thermal head according to the present invention, especially improvements related to etching, and FIG. 2 is a diagram for explaining an embodiment in which the present invention is particularly effective. FIG. 3 is an explanatory diagram of a conventional example. 16...Example of the etching properties of the mixed liquid of the present invention whose main components are ammonia water and hydrogen peroxide shi←2H-y hand〉2”-1 town (own)) Figure 2 Figure 3
Claims (1)
ニア水と過酸化水素水を主成分とし、混合した溶液によ
り、エッチングし、パターン形成することを特徴とする
サーマルヘッドの製造方法。A method for manufacturing a thermal head, characterized in that a heating resistor made of titanium carbide, silicon, and oxygen is etched and patterned using a mixed solution containing aqueous ammonia and hydrogen peroxide as main components.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59259490A JPH0611548B2 (en) | 1984-12-07 | 1984-12-07 | Method of manufacturing thermal head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59259490A JPH0611548B2 (en) | 1984-12-07 | 1984-12-07 | Method of manufacturing thermal head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61136203A true JPS61136203A (en) | 1986-06-24 |
| JPH0611548B2 JPH0611548B2 (en) | 1994-02-16 |
Family
ID=17334811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59259490A Expired - Lifetime JPH0611548B2 (en) | 1984-12-07 | 1984-12-07 | Method of manufacturing thermal head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0611548B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013038415A (en) * | 2011-08-05 | 2013-02-21 | Samsung Electro-Mechanics Co Ltd | Thin film electrode ceramic substrate and method for producing the same |
| US9330937B2 (en) | 2013-11-13 | 2016-05-03 | Intermolecular, Inc. | Etching of semiconductor structures that include titanium-based layers |
-
1984
- 1984-12-07 JP JP59259490A patent/JPH0611548B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013038415A (en) * | 2011-08-05 | 2013-02-21 | Samsung Electro-Mechanics Co Ltd | Thin film electrode ceramic substrate and method for producing the same |
| US9330937B2 (en) | 2013-11-13 | 2016-05-03 | Intermolecular, Inc. | Etching of semiconductor structures that include titanium-based layers |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0611548B2 (en) | 1994-02-16 |
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