JPS6360768A - Thermal head - Google Patents
Thermal headInfo
- Publication number
- JPS6360768A JPS6360768A JP61205544A JP20554486A JPS6360768A JP S6360768 A JPS6360768 A JP S6360768A JP 61205544 A JP61205544 A JP 61205544A JP 20554486 A JP20554486 A JP 20554486A JP S6360768 A JPS6360768 A JP S6360768A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- electrodes
- heating resistor
- film layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 claims description 44
- 239000010410 layer Substances 0.000 abstract description 36
- 239000011241 protective layer Substances 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 8
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 abstract description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 4
- 239000010931 gold Substances 0.000 abstract description 4
- 229910018487 Ni—Cr Inorganic materials 0.000 abstract description 3
- 239000011195 cermet Substances 0.000 abstract description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052737 gold Inorganic materials 0.000 abstract description 3
- 239000011521 glass Substances 0.000 abstract description 2
- 230000001590 oxidative effect Effects 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000002349 favourable effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 18
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000002048 anodisation reaction Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 238000005338 heat storage Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/335—Structure of thermal heads
Landscapes
- Electronic Switches (AREA)
Abstract
Description
【発明の詳細な説明】
Ａ、産業上の利用分野
本発明は、感熱記録装置に用いるサーマルヘッドに関す
るものである。DETAILED DESCRIPTION OF THE INVENTION A. Field of Industrial Application The present invention relates to a thermal head used in a thermal recording device.
Ｂ、従来の技術
従来のサーマルヘッドは、例えば第５図に示すように、
アルミナ等の絶縁基板１と、蓄熱層としてのグレーズ層
２と、グレーズ層２上の発熱抵抗体３と、その発熱抵抗
体３の上面に互いに対向して設けられた一対の電極４ａ
、４ｂと、発熱抵抗体３と電極４ａ 、 ４ｂとの上に
被覆される保護ＦＢ５とから構成され、画電極間にはド
ツト状の発熱抵抗体３ａが露出している。B. Prior Art A conventional thermal head has, for example, as shown in FIG.
An insulating substrate 1 made of alumina or the like, a glaze layer 2 as a heat storage layer, a heating resistor 3 on the glaze layer 2, and a pair of electrodes 4a provided on the upper surface of the heating resistor 3 to face each other.
, 4b, and a protective FB5 that covers the heating resistor 3 and the electrodes 4a and 4b, and the dot-shaped heating resistor 3a is exposed between the picture electrodes.
電極４ａ、４ｂから発熱抵抗体３に通電すると、電極間
に露出するドツト状発熱抵抗体３ａが発熱する。プラテ
ン６に巻きつけた記録媒体、例えば感熱記録紙７にサー
マルヘッドを押圧するとドツト状発熱抵抗体３ａの熱に
より感熱記録紙７に所定の印字がなされる。When electricity is applied to the heating resistor 3 from the electrodes 4a and 4b, the dot-shaped heating resistor 3a exposed between the electrodes generates heat. When a thermal head is pressed against a recording medium, such as thermal recording paper 7, wound around the platen 6, a predetermined print is made on the thermal recording paper 7 by the heat of the dot-shaped heating resistor 3a.
Ｃ０発明が解決しようとする問題点
第５図に示した従来のサーマルヘッドにおいては、電極
４ａ、４ｂの厚み分だけドツト状発熱抵抗体３ａが下方
に位置しているのでその領域の最上層の保護層５も陥没
している。このため、プラテン６がドツト状発熱抵抗体
３ａに充分に押し付けられず感熱記録紙７とドツト状発
熱抵抗体３ａとの熱接触が悪い、したがって、保護層５
に形成された段差部に近い部分では感熱記録紙７が充分
に発色せず印字が不鮮明となる。換言すると、印字され
るドツト形状がばらつき印字全体として濃度が不均一と
なる。また、必要な印字濃度を得るために投入電力を大
きくするとサーマルヘッド駆動に際して大きな消費電力
が必要となる。C0 Problems to be Solved by the Invention In the conventional thermal head shown in FIG. 5, the dot-shaped heating resistor 3a is located below by the thickness of the electrodes 4a and 4b, so that the uppermost layer in that area is The protective layer 5 has also caved in. For this reason, the platen 6 is not sufficiently pressed against the dot-shaped heating resistor 3a, resulting in poor thermal contact between the thermal recording paper 7 and the dot-shaped heating resistor 3a.
In the area near the step formed in the area, the heat-sensitive recording paper 7 does not develop sufficient color and the print becomes unclear. In other words, the shape of the printed dots varies and the density of the entire printing becomes non-uniform. Furthermore, if the input power is increased in order to obtain the required print density, a large amount of power is required to drive the thermal head.
本発明の目的は、ドツト状発熱抵抗体と記録媒体との熱
接触性を向上して印字品質を向上させたサーマルヘッド
を提供することにある。An object of the present invention is to provide a thermal head that improves the thermal contact between the dot-shaped heating resistor and the recording medium, thereby improving the printing quality.
Ｄ０問題点を解決するための手段
本発明は、第１図に示すように、発熱抵抗体１３の上面
に所定の間隙をあけて一対の電極１４ａ。Means for Solving the D0 Problem In the present invention, as shown in FIG. 1, a pair of electrodes 14a are provided on the upper surface of the heating resistor 13 with a predetermined gap therebetween.
１４ｂを対向配置し、その一対の電極間に露出するドツ
ト状発熱抵抗体１３ａを酸化させて酸化膜層１５を成長
させて構成される。好ましくは、′ｖ化膜層１５の上面
が電極１４ａ、１４ｂと同等もしくは高くする。14b are arranged facing each other, and the dot-shaped heating resistor 13a exposed between the pair of electrodes is oxidized to grow an oxide film layer 15. Preferably, the upper surface of the 'v-formed film layer 15 is equal to or higher than the electrodes 14a, 14b.
Ｅ０作用
ドツト状発熱抵抗体１３ａの酸化により酸化膜層１５が
成長隆起し、酸化膜Ｗ１１５と電極１４ａ 、 １４ｂ
との段差が少なくなる。Due to the oxidation of the E0 action dot-shaped heating resistor 13a, the oxide film layer 15 grows and rises, forming an oxide film W115 and the electrodes 14a, 14b.
The difference between the two will be reduced.
Ｆ、実施例 第１図に本発明の実施例を示す。F. Example FIG. 1 shows an embodiment of the present invention.
アルミナ等の絶縁基板１１上に蓄熱層としてのガラスグ
レーズ層１２が設けられ、そのグレーズ層１２上には１
例えばＴａ−３ｉ○２サーメツト、Ｔａ−３ｉＣサーメ
ツト、Ｔ ａ ／ Ｓ ｉ、 Ｔ ａｍ Ｎなどの発熱
抵抗体１３が設けられている。この発熱抵抗体１３の上
面には所定間隙をあけて互いに対向する一対の電極１４
ａ、１４ｂが設けられている。電極１４ａ、１４ｂとし
てニッケルクロムＮｉＣｒと金Ａｕの二層が用いられる
。対向する両電極１４ａ 、 １４ｂ間に露出するドツ
ト状の発熱抵抗体１３ａの領域には、そのドツト状発熱
抵抗体１３ａを酸化して成長させた酸化膜［１５が形成
されている。これら発熱抵抗体１３．酸化膜層１５およ
び電極１４ａ、１４ｂの上には五酸化タンタルなどの保
護層１６が形成されている。A glass glaze layer 12 as a heat storage layer is provided on an insulating substrate 11 made of alumina or the like.
For example, a heating resistor 13 made of Ta-3i○2 cermet, Ta-3iC cermet, Ta/Si, TamN, etc. is provided. A pair of electrodes 14 are provided on the upper surface of the heating resistor 13, facing each other with a predetermined gap.
a and 14b are provided. Two layers of nickel chromium NiCr and gold Au are used as the electrodes 14a and 14b. An oxide film [15] grown by oxidizing the dot-shaped heating resistor 13a is formed in the region of the dot-shaped heating resistor 13a exposed between the opposing electrodes 14a and 14b. These heating resistors 13. A protective layer 16 made of tantalum pentoxide or the like is formed on the oxide film layer 15 and the electrodes 14a, 14b.
なお、ドツト状発熱抵抗体１３ａより十分離れた部分の
電極１４ａ、１４ｂは、メッキ法により約２μ踵の金の
電極層として形成しリード抵抗の低減を図っている。The electrodes 14a and 14b at portions sufficiently distant from the dot-shaped heating resistor 13a are formed by plating as a gold electrode layer with a thickness of approximately 2 μm in order to reduce lead resistance.
ドツト状発熱抵抗体１３ａの領域では、酸化膜層１５の
厚みを約４６００人、酸化されずに残った窒化タンタル
の層を１０００人としてグレーズ層１２の上面から酸化
膜層１５の上面までの高さを約５６００人とした。それ
以外の領域の発熱抵抗体１３の厚みを３０００人、電極
１４ａ、 １４ｂの厚みを２０００人とした。この結果
、酸化膜層１５の上面が電極１４ａ、１４ｂよりも約６
００人だけ突出するようにした。In the region of the dot-shaped heating resistor 13a, the height from the top surface of the glaze layer 12 to the top surface of the oxide film layer 15 is determined by assuming that the thickness of the oxide film layer 15 is approximately 4,600 mm and the thickness of the tantalum nitride layer that remains unoxidized is 1,000 mm. The total number of people was approximately 5,600. The thickness of the heating resistor 13 in other areas was 3000 mm, and the thickness of the electrodes 14a and 14b was 2000 mm. As a result, the upper surface of the oxide film layer 15 is about 6.
Only 00 people stood out.
このように構成されたサーマルヘッドでは、第２図から
れかるとおり、酸化膜層１５上部の保護層１６の上面が
他の部分に比べて突出しているから。In the thermal head constructed in this way, as can be seen from FIG. 2, the upper surface of the protective layer 16 above the oxide film layer 15 is more protruding than the other parts.
感熱記録紙７を介してプラテン６をサーマルヘッドに押
し付けると、感熱記録紙７が酸化［Ｊ１５１００保護層
１６と良好に接触する。従って、ヘッド表面と記録紙と
の間に空隙がなく、また、酸化膜層１５は熱伝導性が良
いので、効率よく熱を伝達することができる。発明者の
実験から、感熱記録紙が一様に発色して、発色したドツ
ト形状も鮮明であることが確認された。When the platen 6 is pressed against the thermal head through the thermal recording paper 7, the thermal recording paper 7 oxidizes and comes into good contact with the J15100 protective layer 16. Therefore, there is no gap between the head surface and the recording paper, and since the oxide film layer 15 has good thermal conductivity, heat can be efficiently transferred. Through experiments conducted by the inventor, it was confirmed that the heat-sensitive recording paper was uniformly colored and that the colored dots were also clearly shaped.
次に、第１図に示したサーマルヘッドの製造プロセスに
ついて説明する。Next, the manufacturing process of the thermal head shown in FIG. 1 will be explained.
（ａ） アルミナ絶縁基板１１上にグレーズ層１２を
形成してその後焼成した。(a) A glaze layer 12 was formed on an alumina insulating substrate 11 and then fired.
（ｂ） グレーズ層１２の上にスパッタリングにより
厚さ３０００人の窒化タンタルＴａ、Ｎの薄膜を形成し
、フォトリソ・エツチングにより例えば８ドツト／Ｉの
密度でパターニングしてドツト状発熱抵抗体１３を形成
した。(b) A thin film of tantalum nitride (Ta,N) having a thickness of 3000 nm is formed by sputtering on the glaze layer 12, and patterned by photolithography and etching at a density of, for example, 8 dots/I to form the dot-shaped heating resistor 13. did.
（Ｃ） その上にニッケルクロムＮｉＣｒとアルミニ
ウムＡＱの二層を合計２０００人の厚みに真空蒸着ある
いはスパッタリングにより形成し、その後フォトリソ・
エツチングによりパターニングして一対の電極１４ａ、
１４ｂを形成した。(C) On top of that, two layers of nickel chromium NiCr and aluminum AQ are formed to a total thickness of 2000 mm by vacuum evaporation or sputtering, and then photolithography.
A pair of electrodes 14a are patterned by etching,
14b was formed.
（ｄ） フォトレジスト材を基板全体に塗布した後、
フォトリソグラフィによってパターニングしてドツト状
発熱抵抗体１３ａだけが露出するようにした。なお、陽
極酸化時の端子として用いる電極部分は露出しておく。(d) After applying the photoresist material to the entire substrate,
It was patterned by photolithography so that only the dot-shaped heating resistor 13a was exposed. Note that the electrode portion used as a terminal during anodization is exposed.
第３図中、符号２１がレジスト材から露出するドツト状
発熱抵抗体１３８の領域、２２が端子を示す。In FIG. 3, reference numeral 21 indicates a region of the dot-shaped heating resistor 138 exposed from the resist material, and 22 indicates a terminal.
（ａ） この作製途中のサーマルヘッドを第３図に示
すように、１重量％のクエン酸から成る電解質溶液２３
中に、ドツト状発熱抵抗体１３ａ（領域２１）だけが液
に触れ端子２２が液に触れないように基板全体を浸漬し
た。溶液２３中には電極２４も浸漬し、端子２２が陽極
、電極２４が陰極となるように各電極に電源２５を接続
する。液温を２０℃に保持しつつ、ドツト状発熱抵抗体
１３ａにおける電流密度が３０ｍＡ／ａｌになるように
定電流を流し、２０分間陽極酸化を行ないドツト状発熱
抵抗体１３ａを一部酸化した。なお、酸化膜層１５の成
長に伴う窒化タンタルの厚みの減少量は電圧に比例し、
この実施例では、４．５人／Ｖであるので、陽極酸化に
際して電圧を約４５０ｖまで上昇して窒化タンタルを２
０００人だけ酸化させ、残余の１０００人をドツト状発
熱抵抗体１３ａとした。酸化により窒化タンタルの体積
は約２．３倍に増加し、酸化膜層１５の厚さは約４６０
０人となった。(a) As shown in FIG.
The entire substrate was immersed in the solution so that only the dot-shaped heating resistor 13a (area 21) came into contact with the liquid and the terminals 22 did not come into contact with the liquid. Electrodes 24 are also immersed in the solution 23, and a power source 25 is connected to each electrode so that the terminal 22 becomes an anode and the electrode 24 becomes a cathode. While maintaining the liquid temperature at 20° C., a constant current was applied so that the current density in the dot-shaped heating resistor 13a was 30 mA/al, and anodic oxidation was performed for 20 minutes to partially oxidize the dot-shaped heating resistor 13a. Note that the amount of decrease in the thickness of tantalum nitride as the oxide film layer 15 grows is proportional to the voltage.
In this example, the voltage is 4.5 people/V, so the voltage is increased to about 450V during anodization to remove tantalum nitride.
Only 1,000 people were oxidized, and the remaining 1,000 people were made into dot-shaped heating resistors 13a. The volume of tantalum nitride increases by about 2.3 times due to oxidation, and the thickness of the oxide film layer 15 becomes about 460 mm.
There were 0 people.
（ｆ） 基板全体を剥離液に浸漬してフォトレジスト
材を剥離した。(f) The entire substrate was immersed in a stripping solution to strip the photoresist material.
（ｇ） 最後に五酸化タンタルＴａ２Ｏ，や酸化硅素
Ｓｉｎ、を５〜７μｍの厚みにスパッタリングして保護
層１６を形成した。(g) Finally, a protective layer 16 was formed by sputtering tantalum pentoxide (Ta2O) or silicon oxide (Sin) to a thickness of 5 to 7 μm.
本実施例では、酸化膜層１５の表面を電極１４ａ。In this embodiment, the surface of the oxide film layer 15 is used as the electrode 14a.
１４ｂの表面より突出させるが、そのためには各部分の
厚みを次のよう設定すればよい。To make it protrude from the surface of 14b, the thickness of each part may be set as follows.
第４図に示すように、
ｄ０二酸化されない発熱抵抗体１３の厚さｄｌ：酸化後
のドツト状発熱抵抗体１３ａの厚さｄ２二酸化膜層１５
の厚さ
Ｃ：電極１４ａ、１４ｂの厚さ
とすれば。As shown in FIG. 4, d0: Thickness of heating resistor 13 that is not oxidized dl: Thickness of dot-shaped heating resistor 13a after oxidation d2: Dioxide film layer 15
Thickness C: The thickness of the electrodes 14a and 14b.
Ｃ＋ ｄ、＜ｄ１＋ ｄ２ ・・・（
１）を満足すればよい。また、酸化による窒化タンタル
の体積膨張は約２．３倍であり、
ｄ、＝２．３ （ｄ、−ｄ、） −
（２）となるから、（１）式は
Ｃ＜１．３ （ｄ 、 −ｄ 、）
・（３）と表せる。つまり電極１４ａ、 １４ｂの厚み
は、酸化によるドツト状発熱抵抗体１３ａの減少膜厚（
ｄ、−ｄ工）の１．３倍より薄く設定する必要がある。C+ d, < d1+ d2...(
1) should be satisfied. Also, the volume expansion of tantalum nitride due to oxidation is approximately 2.3 times, d, = 2.3 (d, -d,) -
(2), so equation (1) is C<1.3 (d, -d,)
・It can be expressed as (3). In other words, the thickness of the electrodes 14a, 14b is determined by the decrease in film thickness of the dot-shaped heating resistor 13a due to oxidation (
It is necessary to set the thickness to be thinner than 1.3 times the thickness (d, -d).
しかして、（３）式で、ドツト状発熱抵抗体１３ａの抵
抗が所望値となるようにｄ工を定めるとともに電極１４
ａ、１４ｂの厚さＣを定めると発熱抵抗体１３の厚さｄ
。が決定される。Accordingly, in equation (3), the d-axis is determined so that the resistance of the dot-shaped heating resistor 13a becomes a desired value, and the electrode 14
When the thickness C of a and 14b is determined, the thickness d of the heating resistor 13 is determined.
. is determined.
Ｆ０発明の効果
本発明によれば、対向する電極両端部間のドツト状発熱
抵抗体の上面と両電極の上面との段差を小さくしたので
、プラテンがドツト状発熱抵抗体と均一に接触し、もっ
て記録媒体との熱接触性が向上しドツト印字形状が均一
化され高品質の印字を得ることができ、必要な印字濃度
を得るために投入する電力が小さくてよく電力効率が向
上する。F0 Effects of the Invention According to the present invention, since the difference in level between the upper surface of the dot-shaped heating resistor between the opposite ends of the electrodes and the upper surface of both electrodes is reduced, the platen can come into uniform contact with the dot-shaped heating resistor. As a result, the thermal contact with the recording medium is improved, the dot print shape is made uniform, high quality printing can be obtained, and the power required to obtain the required print density is small, and the power efficiency is improved.
また、酸化膜層を成長させるため他の部材を発熱抵抗体
上に設ける必要がなく製造プロセスも簡単である。Furthermore, there is no need to provide any other member on the heating resistor to grow the oxide film layer, and the manufacturing process is simple.
第１図は本発明サーマルヘッドの実施例を示す断面図、
第２図はその実施例におけるドツト状発熱抵抗体と記録
媒体との熱接触性を説明する図、第３図は陽極酸化を説
明する図、第４図は各部寸法を説明する図、第５図は従
来のサーマルヘッドにおけるドツト状発熱抵抗体と記録
媒体との接触性を説明する図である。
１１：基板 １２：グレーズ層１３：発熱
抵抗体
１３ａ：ドツト状発熱抵抗体
１４ａ、１４ｂ ：電極 −１５：酸化膜層１
６：保護層FIG. 1 is a sectional view showing an embodiment of the thermal head of the present invention;
Figure 2 is a diagram explaining the thermal contact between the dot-shaped heating resistor and the recording medium in the example, Figure 3 is a diagram explaining anodization, Figure 4 is a diagram explaining the dimensions of each part, and Figure 5 is a diagram explaining the dimensions of each part. The figure is a diagram illustrating the contact between a dot-shaped heating resistor and a recording medium in a conventional thermal head. 11: Substrate 12: Glaze layer 13: Heating resistor 13a: Dot-shaped heating resistor 14a, 14b: Electrode -15: Oxide film layer 1
6: Protective layer
Claims (1)
を対向配置したサーマルヘッドにおいて、 前記一対の電極間に露出する発熱抵抗体を酸化させて酸
化膜層を成長させたことを特徴とするサーマルヘッド。 ２）前記酸化膜層の発熱抵抗体からの高さが前記電極と
同等かまたはそれより高いことを特徴とする特許請求の
範囲第１項記載のサーマルヘッド。[Claims] 1) In a thermal head in which a pair of electrodes are arranged facing each other with a predetermined gap on the upper surface of a heating resistor, the heating resistor exposed between the pair of electrodes is oxidized to form an oxide film layer. A thermal head that is characterized by being grown. 2) The thermal head according to claim 1, wherein the height of the oxide film layer from the heating resistor is equal to or higher than the electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61205544A JPS6360768A (en) | 1986-09-01 | 1986-09-01 | Thermal head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61205544A JPS6360768A (en) | 1986-09-01 | 1986-09-01 | Thermal head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6360768A true JPS6360768A (en) | 1988-03-16 |
Family
ID=16508650
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61205544A Pending JPS6360768A (en) | 1986-09-01 | 1986-09-01 | Thermal head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6360768A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010179551A (en) * | 2009-02-05 | 2010-08-19 | Toshiba Hokuto Electronics Corp | Thermal head and method for manufacturing the same |
| JP2015009471A (en) * | 2013-06-28 | 2015-01-19 | ローム株式会社 | Thermal print head, and thermal printer |
-
1986
- 1986-09-01 JP JP61205544A patent/JPS6360768A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010179551A (en) * | 2009-02-05 | 2010-08-19 | Toshiba Hokuto Electronics Corp | Thermal head and method for manufacturing the same |
| JP2015009471A (en) * | 2013-06-28 | 2015-01-19 | ローム株式会社 | Thermal print head, and thermal printer |
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