JPS6127264A - Formation of thermal head - Google Patents

Formation of thermal head

Info

Publication number
JPS6127264A
JPS6127264A JP14749984A JP14749984A JPS6127264A JP S6127264 A JPS6127264 A JP S6127264A JP 14749984 A JP14749984 A JP 14749984A JP 14749984 A JP14749984 A JP 14749984A JP S6127264 A JPS6127264 A JP S6127264A
Authority
JP
Japan
Prior art keywords
thermal head
heat generating
heat treatment
layer
generating resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14749984A
Other languages
Japanese (ja)
Inventor
Minoru Sato
稔 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alps Alpine Co Ltd
Original Assignee
Alps Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alps Electric Co Ltd filed Critical Alps Electric Co Ltd
Priority to JP14749984A priority Critical patent/JPS6127264A/en
Publication of JPS6127264A publication Critical patent/JPS6127264A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00Electric solid-state thin-film or thick-film devices, not otherwise provided for

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electronic Switches (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)

Abstract

PURPOSE:To stabilize printing quality and to reduce the number of manufacturing processes to simplify said processes, by forming a protective layer (abrasion resistant layer) before applying heat treatment thereto at the temp. higher than that generated by a heat generating resistor. CONSTITUTION:In preparing a thermal head, an abrasion resistant layer 6 being a protective layer comprising tantalum pentoxide (Ta2O5) is formed in a thickness of about 5mum by a sputtering method and heat-treated in air or a nitrogen atmosphere. This heat treatment is performed at temp. equal to or higher than a peak temp. (Tmax) generated by the pulse driving or a heat generating resistor 3 to make it possible to impart a good characteristic for reducing the change ratio in the resistance value of the heat generating resistor 3. The relation of the resistance change ratio of thus formed thermal head and a pulse number is reduced in variation and printing quality is stabilized over a long period of time and, because a heat treatment process is performed after each layer was formed by a sputtering method, there is no interruption in the process and manufacturing cost can be reduced.

Description

【発明の詳細な説明】 〔利用分野〕 本発明は、サーマルヘッドに関し、詳しくは、サーマル
ヘッドの形成方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Application] The present invention relates to a thermal head, and more particularly to a method for forming a thermal head.

〔従来例及び問題点〕[Conventional examples and problems]

第4図は、従来のサーマルヘッドを示す要部断面図で、
図において、lはアルミナ等から成る絶縁性基板、2は
絶縁性基板l上に形成された半円弧状のグレーズドガラ
ス、3はTa2N等から成る発熱抵抗体、4は電極層で
該電極層4は箋゛熱抵・抗体3上の所定部のみに例えば
アルミニウム等で形成されている。5は酸化シリコン(
StO,)等から成る耐酸化層で、該耐酸化層5は端子
8を除く表面を覆っている。6は五酸化タンタル(Ta
、0.)等から成る耐摩耗層で、該耐摩耗層6は図示し
ていないが、印画のための記録紙と接するものである。
Figure 4 is a cross-sectional view of the main parts of a conventional thermal head.
In the figure, l is an insulating substrate made of alumina or the like, 2 is semicircular arc-shaped glazed glass formed on the insulating substrate l, 3 is a heating resistor made of Ta2N, etc., and 4 is an electrode layer. The plate is formed of aluminum or the like only at a predetermined portion on the thermal resistor/body 3. 5 is silicon oxide (
The oxidation-resistant layer 5 is made of StO, ), etc., and covers the surface except for the terminals 8. 6 is tantalum pentoxide (Ta
, 0. ), etc. Although the wear-resistant layer 6 is not shown, it comes into contact with recording paper for printing.

そして、耐摩耗層6の発熱抵抗体3と対向する位置に凹
部6aが形成されており、該凹部6aに前記記録紙が押
圧されて、感熱記録が成されるものである。なお、7は
Ni層、8は半田層である。
A recess 6a is formed in the wear-resistant layer 6 at a position facing the heating resistor 3, and the recording paper is pressed against the recess 6a to perform thermal recording. Note that 7 is a Ni layer and 8 is a solder layer.

次に、上述の如く構成されたサーマルヘッドの感熱記録
動作について説明する。まず、発熱抵抗体3に、端子8
、電極層4を介して第2図(イ)に示すようなパルス幅
t1成るパルス電圧が印加されると、発熱抵抗体3の発
熱部3aは、第2図(ロ)に示すような特性で、加熱冷
却される。そして、この発熱部3aの熱は、耐酸化層5
を介して耐摩耗層6の凹部5alC伝わり、凹部6aに
押圧されている記録紙(図示せず)に1パルスによって
、1ドツト分の感熱記録を行なうことかで苧、そして、
サーマルヘッドの各発熱部(ドツト)に選択的にパルス
電圧を印加し、サーマルヘッドに対して記録紙を相対移
動させることによって、記録紙に印画することができる
Next, the thermal recording operation of the thermal head configured as described above will be explained. First, connect the terminal 8 to the heating resistor 3.
, when a pulse voltage having a pulse width t1 as shown in FIG. 2(a) is applied via the electrode layer 4, the heating portion 3a of the heating resistor 3 has the characteristics as shown in FIG. 2(b). It is heated and cooled. The heat of this heat generating portion 3a is transferred to the oxidation-resistant layer 5.
The heat is transmitted through the recess 5alC of the wear-resistant layer 6 to the recording paper (not shown) pressed against the recess 6a, and one dot's worth of thermal recording is performed by one pulse.
An image can be printed on the recording paper by selectively applying a pulse voltage to each heat generating portion (dot) of the thermal head and moving the recording paper relative to the thermal head.

また、これよりも高速での印画を行なうためには、サー
マルヘッドと記録紙との相対移動スピードを速くする必
要があり、このため、サーマルヘッドの発熱抵抗体3へ
のパルス電圧は、第3図(イ)に示すようなパルス幅”
* (tl> t2)と狭(、かつ印加電圧■2がvl
に比して高く設定されたパルスであり、これによって発
熱部3aでの温度特性は、第3図(ロ)に示すように、
温度T1に比して、温度T2と高い(Tx<Tz)温度
特性となる。
In addition, in order to print at a higher speed than this, it is necessary to increase the relative movement speed between the thermal head and the recording paper, and for this reason, the pulse voltage to the heating resistor 3 of the thermal head is "Pulse width as shown in figure (a)"
* (tl > t2) and narrow (and the applied voltage ■2 is vl
This pulse is set higher than
Compared to the temperature T1, the temperature characteristic is higher at the temperature T2 (Tx<Tz).

一般にサーマルヘッドの印画寿命は、約1億回パルスの
繰返し、記録後でも、発熱抵抗体3の有する抵抗値は、
初期値に対して±109g以内の変化に抑えるの要があ
り、また、いわゆるステップストレステストにおける特
性も、サーマルヘッドが破壊するまでの発熱抵抗体3の
抵抗値も±lOチ以内の変化であることが要求されてい
る。
In general, the printing life of a thermal head is approximately 100 million pulse repetitions, and even after recording, the resistance value of the heating resistor 3 is
It is necessary to suppress the change to within ±109g from the initial value, and also the characteristics in the so-called step stress test, and the resistance value of the heating resistor 3 until the thermal head breaks, must change within ±10g. That is required.

そして、一般ttc+s、発熱抵抗体は、連続パルス通
電及びステップストレステストにおいて、抵抗値の変化
は、初期値に対して低い方向に変化し、その値は一1O
チ〜−2O4程度となる傾向がある。
In general ttc+s, heating resistors, in continuous pulse energization and step stress tests, the resistance value changes in a direction lower than the initial value, and the value is -1O
It tends to be about -2O4.

上述の如き、発熱抵抗体の抵抗値の変化を防止する為に
、発熱抵抗体形成後または、電極層形成後に、例えば特
開昭56−130375号公報の如くサーマルヘッドと
しての印画時の発熱抵抗体の発熱温度より、高い温度で
熱処理を行ない、発熱抵抗体の結晶構造な変化させてし
ま5という方法がとられていた。
In order to prevent the resistance value of the heat generating resistor from changing as described above, after forming the heat generating resistor or forming the electrode layer, the heat generating resistor is removed during printing using a thermal head as disclosed in Japanese Patent Application Laid-Open No. 56-130375. A method has been used in which heat treatment is performed at a temperature higher than the heat generation temperature of the heat generating resistor to change the crystal structure of the heat generating resistor.

しかしながら、上記の処理工程は、発熱抵抗体または、
電極層形成後に、発熱抵抗体の熱処理時の酸化防止のた
めに、図示していないが発熱抵抗体上に例えばアルミニ
ウム等をその全面に形成する必要があり、熱処理後#C
は、アルさニウム等の表面酸化物や、アルミニウムその
ものの除去工程が必要となる。この熱処理工程のために
、各形成工程や、フォトプロセスを一時中断する必要も
あり、工程が多く、複雑なものになるという欠点があっ
た。
However, the above-mentioned processing steps are performed on heating resistors or
After the electrode layer is formed, it is necessary to form, for example, aluminum on the entire surface of the heating resistor (not shown) in order to prevent oxidation during heat treatment of the heating resistor.
requires a process to remove surface oxides such as aluminum and aluminum itself. Because of this heat treatment step, it is necessary to temporarily interrupt each forming step and the photo process, which has the drawback of increasing the number of steps and making the process complicated.

〔発明の目的〕[Purpose of the invention]

本発明は、上述の如き欠点に解決を与えるものであり、
発熱抵抗体の抵抗値の変化率が小さく、長時間の連続動
作においても、印画品質が安定しているとともに、その
製造工程が少なく簡単であるサーマルヘッドを提供する
ことにある。
The present invention provides a solution to the above-mentioned drawbacks,
It is an object of the present invention to provide a thermal head in which the rate of change in the resistance value of a heating resistor is small, the printing quality is stable even during long-term continuous operation, and the manufacturing process is simple with few steps.

〔発明の実施例〕[Embodiments of the invention]

第1図は、本発明の一実施例を示すサーマルヘッドの要
部断面図である。図において、アルミナ等から成る絶縁
性基板lの所定位置に半円弧状のグレーズドガラス2が
形成する第1の工程と、次に絶縁性基板l上に例えばT
 a 2 N等の発熱抵抗体3をTaのリアクティブス
パッタ法によって、例えば500Aの厚さに形成する第
2の工程と、形成された発熱抵抗体3上に、例えげアル
ミニウム等の電極層4をスパッタ法によって、約2μm
の厚さに形成する第3の工程と、この第3の工程の後に
、フォトエツチングによって、発熱抵抗体3と電極層4
とのそれぞれに発熱抵抗体3の発熱部3aと配線導体部
4aとを形成する第4の工程と、酸化シリコン(sio
、)等から成る耐酸化層5をスパッタ法で約2μmの厚
さに形成する第5の工程と、五酸化タンタル(Ta20
s)等から成るいわゆる保膜層である耐摩耗層6を同じ
(スパッタ法で、約5μmの厚さに形成する第6の工程
と、前記の如く形成されたサーマルヘッドを空気中又は
、チッ素雰囲中で熱処理を行なう第7の工程とから成る
。この熱処理の条件は、発熱抵抗体3のパルス駆動によ
って発熱するピーク温度(Tmax)と同等もしくは、
ピーク温度よりも高い温度で行なうことによって、発熱
抵抗体3の抵抗値変化率の小さい良好な特性をもたせる
ことができる。例えば、このサーマルヘッドのパルス駆
動は、印加/<ルスが、オンタイム1.1 m s 、
すイクル5.4 m s 、印加電力が1w/dotと
したとき、抵抗体の表面ピーク温度は、450℃であっ
た。従ってこの駆動条件による表面ピーク温度よりも高
い熱処理条件を与えるならば、上記駆動条件での発熱抵
抗体の抵抗値変化を抑えることができる。本実施例での
熱処理条件は、500℃、36m1nである。この熱処
理後に電極層4の端子部4bの表面に形成された、表面
酸化物をフォトエツチングによって除去する第8の工程
と、この端子部4b上にニッケル(Ni)層7をメッキ
する第9の工程と、このNi層層上上リフロー半田法に
よって、半田層8をコーティング形成する第10の工程
とによって、サーマルヘッドが形成される。
FIG. 1 is a sectional view of a main part of a thermal head showing an embodiment of the present invention. In the figure, a first step is to form a semicircular arc-shaped glazed glass 2 at a predetermined position on an insulating substrate l made of alumina, etc., and then a T
A second step is to form a heat generating resistor 3 made of a2N or the like to a thickness of, for example, 500A by reactive sputtering of Ta, and an electrode layer 4 of, for example, aluminum is formed on the formed heat generating resistor 3. approximately 2 μm by sputtering method.
After this third step, the heating resistor 3 and the electrode layer 4 are formed by photo-etching.
a fourth step of forming a heat generating part 3a and a wiring conductor part 4a of a heat generating resistor 3, respectively, and a silicon oxide (sio
, ) etc. to a thickness of about 2 μm by sputtering, and tantalum pentoxide (Ta20
A sixth step is to form a wear-resistant layer 6, which is a so-called protective film layer, to a thickness of approximately 5 μm by sputtering, and the thermal head formed as described above is placed in the air or in a chip. and a seventh step of performing heat treatment in an elementary atmosphere.The conditions for this heat treatment are equal to or equal to the peak temperature (Tmax) of heat generated by pulse driving of the heat generating resistor 3, or
By performing the heating at a temperature higher than the peak temperature, the heating resistor 3 can have good characteristics such as a small rate of change in resistance value. For example, the pulse drive of this thermal head has an on-time of 1.1 ms,
When the cycle was 5.4 m s and the applied power was 1 w/dot, the surface peak temperature of the resistor was 450°C. Therefore, if heat treatment conditions higher than the surface peak temperature under these driving conditions are applied, changes in the resistance value of the heating resistor under the above driving conditions can be suppressed. The heat treatment conditions in this example are 500° C. and 36 m1n. After this heat treatment, there is an eighth step of removing the surface oxide formed on the surface of the terminal portion 4b of the electrode layer 4 by photoetching, and a ninth step of plating a nickel (Ni) layer 7 on the terminal portion 4b. A thermal head is formed by this step and a tenth step of coating and forming a solder layer 8 on the Ni layer by a reflow soldering method.

上述の如き、工程によって形成されたサーマルヘッドと
従来のサーマルヘッドとのステップストレス試験による
抵抗変化率と印加電力との関係を第5図に示す。特性A
は、本実施例によるサーマルヘッドの特性曲線、特性B
は従来のサーマルヘッドの特性曲線である。また、第6
図は、連続パルス通電試験における1w/dotでの抵
抗変化率とパルス数との関係を示したもので、特性aが
本実施例、特性すが従来のサーマルヘッドの特性曲線で
ある。
FIG. 5 shows the relationship between the resistance change rate and the applied power in a step stress test of the thermal head formed by the process as described above and the conventional thermal head. Characteristic A
is the characteristic curve of the thermal head according to this embodiment, characteristic B
is a characteristic curve of a conventional thermal head. Also, the 6th
The figure shows the relationship between the rate of change in resistance at 1 W/dot and the number of pulses in a continuous pulse energization test, where characteristic a is the characteristic curve of this embodiment and characteristic curve of the conventional thermal head.

〔発明の効果〕〔Effect of the invention〕

上述の如く、本発明のサーマルヘッドは、保護層(耐摩
耗層)を形成した後に、印画時の発熱抵抗体の発熱温度
より高い温度で熱処理な行なうことによって、抵抗体の
抵抗値の経時変化が極めて少な(、長期間の印字品質が
安定したものであるとともに、連続スパッタ法による各
層形成後に、熱処理工程な行なうために、工程での中断
がなく、製造コストな安価にすることができろという効
果を奏する。
As described above, in the thermal head of the present invention, after forming the protective layer (wear-resistant layer), heat treatment is performed at a temperature higher than the heating temperature of the heating resistor during printing, thereby reducing the change in resistance value of the resistor over time. (The printing quality is stable over a long period of time, and since a heat treatment process is performed after each layer is formed by continuous sputtering, there is no interruption in the process, making it possible to reduce manufacturing costs.) This effect is achieved.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例を示すサーマルヘッドな示す
要部断面図、第2図(イ)、(ロ)、第3図(イ)。 (ロ)はサーマルヘッドの印画動作時のパルスとヘッド
表面の温度との関係を示す図、第4図は従来のサーマル
ヘッドを示す要部断面図、第5図はステップストレステ
ストの特性図、第6図はノくルス寿命試験の特性図であ
る。 l・・・・・・絶縁性基板、3・・・・・・発熱抵抗体
、4・・・・・・電極層、6・・・・・・耐摩耗層(保
護層)第1図 6り
FIG. 1 is a cross-sectional view of a main part of a thermal head showing an embodiment of the present invention, FIGS. 2(A) and 3(B), and FIG. 3(A). (b) is a diagram showing the relationship between the pulses during printing operation of the thermal head and the temperature of the head surface, Figure 4 is a sectional view of the main part showing a conventional thermal head, Figure 5 is a characteristic diagram of a step stress test, FIG. 6 is a characteristic diagram of the Norls life test. 1... Insulating substrate, 3... Heat generating resistor, 4... Electrode layer, 6... Wear resistant layer (protective layer) Fig. 1 6 the law of nature

Claims (1)

【特許請求の範囲】[Claims] 絶縁性基板と、該絶縁性基板上に形成された発熱抵抗体
と、該発熱抵抗体に通電するための電極層と、前記発熱
抵抗体と電極層の所定部を保護するための保護層とから
成るサーマルヘッドにおいて、前記保護層を形成した後
に、発熱抵抗体への通電によつて生じる発熱抵抗体の発
熱温度より高い温度で熱処理を行なうことを特徴とする
サーマルヘッドの形成方法。
an insulating substrate, a heating resistor formed on the insulating substrate, an electrode layer for energizing the heating resistor, and a protective layer for protecting predetermined portions of the heating resistor and the electrode layer. A method for forming a thermal head comprising: after forming the protective layer, heat treatment is performed at a temperature higher than the heat generation temperature of the heat generating resistor caused by energization of the heat generating resistor.
JP14749984A 1984-07-18 1984-07-18 Formation of thermal head Pending JPS6127264A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14749984A JPS6127264A (en) 1984-07-18 1984-07-18 Formation of thermal head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14749984A JPS6127264A (en) 1984-07-18 1984-07-18 Formation of thermal head

Publications (1)

Publication Number Publication Date
JPS6127264A true JPS6127264A (en) 1986-02-06

Family

ID=15431752

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14749984A Pending JPS6127264A (en) 1984-07-18 1984-07-18 Formation of thermal head

Country Status (1)

Country Link
JP (1) JPS6127264A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0634925A (en) * 1992-07-20 1994-02-10 Nippon Telegr & Teleph Corp <Ntt> Optical waveguide circuit device
US7214295B2 (en) * 2001-04-09 2007-05-08 Vishay Dale Electronics, Inc. Method for tantalum pentoxide moisture barrier in film resistors

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0634925A (en) * 1992-07-20 1994-02-10 Nippon Telegr & Teleph Corp <Ntt> Optical waveguide circuit device
US7214295B2 (en) * 2001-04-09 2007-05-08 Vishay Dale Electronics, Inc. Method for tantalum pentoxide moisture barrier in film resistors

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