JPH0280262A - Thermal head - Google Patents
Thermal headInfo
- Publication number
- JPH0280262A JPH0280262A JP23245088A JP23245088A JPH0280262A JP H0280262 A JPH0280262 A JP H0280262A JP 23245088 A JP23245088 A JP 23245088A JP 23245088 A JP23245088 A JP 23245088A JP H0280262 A JPH0280262 A JP H0280262A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- conductor
- common electrode
- thermal head
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 claims abstract description 33
- 239000011521 glass Substances 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 10
- 230000001681 protective effect Effects 0.000 claims abstract description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000005299 abrasion Methods 0.000 claims abstract description 3
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 3
- 238000007639 printing Methods 0.000 claims abstract description 3
- 238000004544 sputter deposition Methods 0.000 claims abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract 3
- 239000000758 substrate Substances 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 229910007991 Si-N Inorganic materials 0.000 abstract description 2
- 229910006294 Si—N Inorganic materials 0.000 abstract description 2
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract description 2
- 229910019819 Cr—Si Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 37
- 229910000679 solder Inorganic materials 0.000 description 10
- 230000000694 effects Effects 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000003064 anti-oxidating effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/335—Structure of thermal heads
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は各種プリンタ等に適用されるサーマルヘッドの
構造：二係わり、特に共通電極部の構造に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the structure of a thermal head applied to various printers, etc., and particularly relates to the structure of a common electrode portion.
従来技術におけるサーマルヘッドの構造は第２図に示す
ものが一般的である。アルミナ基板等の高抵抗基材１上
にグレーズガラス層２の形成された基板を用い、その上
に発熱抵抗体３、配線導体４、これらの保護膜５を形成
したもので、特に、各発熱抵抗素子を高温に発熱させる
駆動パルス電流の導入される共通電極部６は、その構成
として、配線導体４上の基板端面領域に必要な薄膜を積
層している０例えば、その材料として、Ｃｒ （６１）
／Ｃｕ （６２）などが−膜面に用いられるが、この共
通電極部６は、丈−マルヘッドの大きさによって端部：
＝終端から終端まで発熱抵抗素子と並行な形で形成する
ため、その配線抵抗を極力低減し、かつ電流容量を保証
する必要があり、これらの材料の上にさらに耐環境性を
も保証する目的からはんだ材料６３などを被覆実装した
構造とするものが一般的であった。The structure of a conventional thermal head is generally shown in FIG. A substrate on which a glaze glass layer 2 is formed on a high-resistance substrate 1 such as an alumina substrate is used, and a heating resistor 3, a wiring conductor 4, and a protective film 5 for these are formed on the substrate. The common electrode part 6, into which the drive pulse current that causes the resistance element to heat up to a high temperature is introduced, has a structure in which a necessary thin film is laminated on the end surface area of the substrate on the wiring conductor 4. For example, the material thereof is Cr ( 61)
/Cu (62) etc. are used for the film surface, but the length of this common electrode part 6 depends on the size of the round head.
= Since it is formed in parallel with the heating resistor element from end to end, it is necessary to reduce the wiring resistance as much as possible and guarantee current capacity, and the purpose is to further ensure environmental resistance on top of these materials. It was common to have a structure in which a solder material 63 or the like was coated and mounted.
しかしながら、これらの目的を達成するためにはその膜
厚は十分厚く形成する必要があり、特に発熱抵抗体上を
プラテンローラで押付けられて摺動走行する記録紙（図
示せず）がこの共通電極部６に接触しない距離まで発熱
抵抗素子の配置を離して形成する必要があった。この時
の共通電極部に形成されるＣｕ、はんだの膜厚は上記目
的を満たすために各々約５μｍ、２０μｍ８！度が必要
であり、Ｃｕ薄膜ははんだに対する耐食性（はんだ食わ
れ性）も悪いという欠点があった。このような問題点を
改善するために［特開昭６２−１０８０７０Ｊでは、そ
の構成をＣｒ６１／Ｎｉ６２／はんだ６３とすることに
よってはんだに対する食われ防止を図り同時にその必要
な膜厚も１μｍ程度に薄く形成することが可能ではんだ
付は性も同等の状態が得られる構造を提案している。は
んだＣ二対する食われ性の改善は認められるが、共通電
極部の配線抵抗の低減という面からは、Ｃｕに比べて電
気抵抗の大きい阻の適用によって同等の抵抗を得るため
には膜厚を増す必要があり、Ｎ１の膜厚を薄い状態のま
ま適用するためには、はんだの膜厚を増やす方法で性能
を維持する必要がある。この構造による場合にも共通電
極部の凸状によって発熱抵抗素子の配置は記録紙（プラ
テンロー２）が接触しない位置まで遠ざける必要があり
、この結果サーマルヘッドの小形化の隘路になり低コス
ト化という面で問題となる。However, in order to achieve these objectives, it is necessary to form the film sufficiently thick, and in particular, the recording paper (not shown) that is pressed by a platen roller and slides over the heating resistor is coated with this common electrode. It was necessary to space the heating resistive elements apart enough to avoid contact with the portion 6. At this time, the thicknesses of the Cu and solder films formed on the common electrode portion are approximately 5 μm and 20 μm, respectively, in order to meet the above objectives. However, the Cu thin film also has the disadvantage of poor corrosion resistance (solder erosion) to solder. In order to improve these problems, in JP-A-62-108070J, the composition was made to be Cr61/Ni62/solder 63 to prevent the solder from being eaten away, and at the same time, the necessary film thickness was reduced to about 1 μm. We are proposing a structure that can be formed and has the same soldering properties. Although an improvement in the corrosion resistance of solder C2 is recognized, from the perspective of reducing the wiring resistance of the common electrode part, it is necessary to increase the film thickness in order to obtain the same resistance by applying a solder that has a higher electrical resistance than Cu. In order to apply the N1 film thickness in a thin state, it is necessary to maintain performance by increasing the solder film thickness. Even with this structure, due to the convex shape of the common electrode part, it is necessary to place the heating resistor element away from the recording paper (platen row 2) so that it does not come into contact with it. It becomes a problem in terms of
本発明の目的は前記した従来技術の欠点をなくし、サー
マルヘッドの共通電極部の構造を改善しヘッドサイズの
小形化と低コスト化を図るための新規な構造を提供する
ことにある。SUMMARY OF THE INVENTION An object of the present invention is to eliminate the drawbacks of the prior art described above, improve the structure of the common electrode portion of a thermal head, and provide a new structure for reducing the head size and cost.
本発明は上記目的にもとづきサーマルヘッドの共通電極
部の構成を従来技術のような配線導体上に形成する方法
から、配線の下層に形成することによって配線上には保
護膜だけが形成されることになり、プラテンローラ、記
録紙などの接触による問題もなく発熱抵抗素子の位置も
略々共通電極近傍に形成できるためヘッドサイズも小形
化が図れ、かつ配線抵抗もさらに低減できることになり
効率の面からも効果が得られる。これは、従来のグレー
ズガラス層の一部開口部（共通電極の形成される位置ロ
ーこのガラス層と膜厚が等価な厚膜焼成導体（Ａｇ 、
Ａｇ−Ｐｄなど）を充填する形で設けることで、他の
構成要素（抵抗層、配線導体層）はその上に従来通り形
成され、保護膜が全面を覆うような構造にすることで達
成される。またこの構造６二おいて、厚膜焼成導体と発
熱抵抗層との接着性をより改善するために極薄なＮｉ層
を形成することで界面の接触抵抗も低減され性能も著し
く向上される。Based on the above-mentioned object, the present invention provides a method for forming the common electrode part of a thermal head on a wiring conductor as in the prior art, by forming it in a lower layer of the wiring, so that only a protective film is formed on the wiring. As a result, the heating resistor element can be formed almost close to the common electrode without problems caused by contact with the platen roller, recording paper, etc., making it possible to reduce the head size and further reduce wiring resistance, which improves efficiency. Effects can also be obtained from. This is a thick film fired conductor (Ag,
This is achieved by providing a structure in which the protective film covers the entire surface, with the other components (resistance layer, wiring conductor layer) being formed on top of it in the conventional manner. Ru. Furthermore, in this structure 62, by forming an extremely thin Ni layer to further improve the adhesion between the thick-film fired conductor and the heating resistance layer, the contact resistance at the interface is reduced and the performance is significantly improved.
上記構造のサーマルヘッドによれば、共通電極がクレー
ズガラス層と同等な膜厚で薄膜層の下層に形成されるた
め、従来技術で問題となった共通電極を構成する積層膜
と、プラテンローラで圧接されて摺動走行する記録紙と
の接触も全くなく、このため発熱抵抗素子は可能な限り
基板端部に形成でき、同時に保護膜（酸化防止膜、耐摩
耗膜）がこれらの領域全面を榎うように形成できるため
、耐食性等、配線の信頼性も著しく改善される。また共
通電極部に形成する厚膜焼成導体は一般的に適用される
グレーズガラス層の膜厚数１０μｍと同等な膜厚で形成
されるため十分な低抵抗化が図れ、同時に個々の配線導
体（信号ライン）も発熱抵抗素子の配置が共通電極側に
形成できるため短縮されることになり配線導体による消
費電力も低減されること砿二なり記録効率も改善する。According to the thermal head with the above structure, the common electrode is formed under the thin film layer with the same thickness as the craze glass layer, so the laminated film constituting the common electrode and the platen roller, which was a problem in the conventional technology, are There is no contact with the recording paper that is pressed and slides, so the heating resistor element can be formed as close to the edge of the substrate as possible, and at the same time the protective film (antioxidation film, abrasion resistant film) covers the entire surface of these areas. Since it can be formed in a transparent manner, reliability of wiring such as corrosion resistance is also significantly improved. In addition, the thick film fired conductor formed in the common electrode part is formed with a film thickness equivalent to several tens of micrometers of a commonly applied glaze glass layer, so it is possible to achieve a sufficiently low resistance, and at the same time, the individual wiring conductors ( The signal line (signal line) can also be shortened because the heat-generating resistor element can be formed on the common electrode side, and power consumption by wiring conductors is also reduced, which also improves recording efficiency.
これらの効果によって、ヘッドサイズの小形化と低コス
ト化が図れる。These effects make it possible to reduce head size and cost.
以下、本発明の実施例を第１図で詳細に説明する、第１
図はサーマルヘッドの断面構造を示し、基本的な材料構
成および膜の形成方法は従来技術と同様である。すなわ
ち、平滑面を有するグレーズガラス層２が形成されたア
ルミナ等の高抵抗基材１上に一部開口したグレーズガラ
ス層２の部分に共通電極層６となる厚膜焼成導体６１を
印刷シーよって膜厚がグレーズガラス層２と同等な厚さ
で高温焼成し形成する。この時の導体材料として実施例
ではＡｇ導体（シート抵抗１ｍΩ／口）を適用した。こ
の状態で厚膜焼成導体６１の配線抵抗値はＢ４サイズヘ
ッドの例で記録幅は全長２５６−１導体の配線幅１１１
１１において約α３Ωと十分低い抵抗が得られた。膜厚
はグレーズガラス層２と同等な約６０μｍである。さら
にこのＡｆ導体６１上に無電解化学ニッケル膜（Ｎｌ膜
）６２をα５μｍ形成し、その後スパッタリングで形成
する抵抗体層３との接着性を保証した。これは、一般に
印刷された厚膜焼成導体と薄膜との低抵抗な接触界面が
得難い点を改善するためである。 Ｎｉめつき膜６２の
形成にはＡｇ導体６１面をシアン系処理液で前処理しＮ
１は一般に知られているものの中からＮｉ −Ｐ （ニ
ッケル・リン系）をめっき液として適用した、その後Ｃ
ｒ−３ｉ系抵抗体層３を形成し、さらに配１１１４体４
としてＣｒ／Ａｔの積層膜を各々α１μ、１．０μの膜
厚で形成し所望のパターン化後、保護膜５として酸化防
止膜５ｔ（ＳｉＯ□：４０μ）をパターン全面を覆うよ
うに形成した後、共通電極部６および発熱抵抗体領域を
狽うように耐摩耗層５２（Ｓｉ−Ｎ、１．５μ）を形成
した構造である。Hereinafter, an embodiment of the present invention will be explained in detail with reference to FIG.
The figure shows a cross-sectional structure of the thermal head, and the basic material composition and film formation method are the same as those of the prior art. That is, on a high-resistance base material 1 such as alumina on which a glazed glass layer 2 having a smooth surface is formed, a thick film fired conductor 61 that will become a common electrode layer 6 is printed on a partially opened portion of the glazed glass layer 2. It is formed by firing at a high temperature to have a film thickness equivalent to that of the glaze glass layer 2. In this example, an Ag conductor (sheet resistance: 1 mΩ/hole) was used as the conductor material at this time. In this state, the wiring resistance value of the thick film fired conductor 61 is an example of a B4 size head, and the recording width is 256 mm in total length, and 111 mm in wiring width of the conductor.
In No. 11, a sufficiently low resistance of about α3Ω was obtained. The film thickness is about 60 μm, which is the same as that of the glaze glass layer 2. Further, an electroless chemical nickel film (Nl film) 62 with a thickness of α5 μm was formed on this Af conductor 61 to ensure adhesion with the resistor layer 3 which was subsequently formed by sputtering. This is to improve the problem that it is generally difficult to obtain a low-resistance contact interface between a printed thick-film fired conductor and a thin film. To form the Ni plating film 62, the surface of the Ag conductor 61 is pretreated with a cyan-based treatment liquid, and then the Ni plating film 62 is formed.
1 is a plating solution in which Ni-P (nickel-phosphorus) is applied as a plating solution from among commonly known plating solutions, and then C
An r-3i resistor layer 3 is formed, and a 1114-layer structure 4 is formed.
After forming a laminated film of Cr/At with a film thickness of α1μ and 1.0μ, respectively, and forming the desired pattern, an oxidation prevention film 5t (SiO□: 40μ) was formed as a protective film 5 so as to cover the entire surface of the pattern. In this structure, a wear-resistant layer 52 (Si-N, 1.5 μm) is formed to cover the common electrode portion 6 and the heating resistor region.
この構造によるサーマルヘッドでは発熱抵抗素子の形成
される位置が基板端面から図中に示すｔ２＝ １．５−
以下と従来技術で示した第２図ｔ、＝４−以上と１／２
以下に短縮されヘッドサイズで約１７係小形化が図れ、
これによって基板当りのヘッド回収率が大幅に増加した
。また同時に保護［５で共通電極部領域も全面接われる
構造のためＡｔ４体６１の耐食性（耐環境性）も著しく
改善され、配線抵抗の低減と併せてヘッドの効率向上が
達成された。In the thermal head with this structure, the position where the heating resistor element is formed is t2 = 1.5- as shown in the figure from the end surface of the substrate.
Figure 2 t shown below and prior art, = 4- or more and 1/2
The head size has been reduced by approximately 17 mm.
This significantly increased the head recovery rate per substrate. At the same time, because of the structure in which the common electrode region is entirely covered by protection [5], the corrosion resistance (environmental resistance) of the At 4 body 61 is also significantly improved, and in addition to reducing the wiring resistance, the efficiency of the head is improved.
以上の実施例では厚膜焼成導体としてＡｆを使用した例
について述べたが、この導体材料としてはＡｇ−Ｐｄ系
においてもそのシート抵抗を選択することで同等の効果
が得られるものである。In the above embodiments, an example was described in which Af was used as the thick film fired conductor, but the same effect can be obtained by selecting the sheet resistance of Ag-Pd based conductor material.
本発明によれば、共通電極部導体として厚膜焼成導体を
グレーズガラス層と同等の膜厚で配線層の下層側砿二設
ける構造としたため発熱抵抗素子の配置がより基板端部
に近づいた構造となりこれによってヘッドサイズの小形
化と基板当りのヘッド回収率の増加およびサイズの小形
化に伴なう配線抵抗の低減により印画に必要な電力の実
効的な効率向上が図れ、信頼性の改善にも効果がある。According to the present invention, a thick-film fired conductor is provided as a common electrode conductor at the lower side of the wiring layer with a film thickness equivalent to that of the glazed glass layer, so the heating resistor element is placed closer to the edge of the substrate. This makes it possible to effectively improve the efficiency of the power required for printing by reducing the head size, increasing the head recovery rate per substrate, and reducing wiring resistance due to the smaller size, which leads to improved reliability. is also effective.
第１図は本発明の実施例を示すサーマルヘッドの断面構
造図、第２図は従来技術におけるサーマルヘッドの断面
構造図である。
１・・・高抵抗基板
２・・・グレーズガラス層
３・・・発熱抵抗体層
４・・・配線導体層
・・・保護膜
・・・共通電極
１・・・酸化防止層
２・・・耐摩耗層
１・・・Ｃｒ ｏｒ厚膜焼成導体
２−・−Ｃｕ 、 ｏｒ Ｎｉ
６・・・はんだ。FIG. 1 is a cross-sectional structural diagram of a thermal head showing an embodiment of the present invention, and FIG. 2 is a cross-sectional structural diagram of a thermal head according to the prior art. 1...High resistance substrate 2...Glaze glass layer 3...Heating resistor layer 4...Wiring conductor layer...Protective film...Common electrode 1...Antioxidation layer 2... Wear-resistant layer 1...Cror thick film fired conductor 2--Cu, or Ni 6...Solder.
Claims (1)
発熱抵抗素子、これにつながる配線導体およびこれらを
覆うように保護膜が形成されて成るサーマルヘッドにお
いて、該基材上に具備せる平滑面を有するグレーズガラ
ス層の基材端部に位置する一部開口部に、ガラス層と厚
さが等価なサーマルヘッドの共通電極部を構成する厚膜
焼成導体が形成され、該厚膜焼成導体上に極薄なニッケ
ル層が形成された構造の基板上に発熱抵抗素子、配線導
体の構成要素をスパッタリング、蒸着などの手法で形成
し、これらのパターンを覆うように形成する保護膜は酸
化防止層として酸化シリコンを基板全面に形成し、発熱
抵抗素子、共通電極部の特定な領域を覆うように耐摩耗
層として窒化シリコンを形成した構造を有し、発熱抵抗
体が基板端面近傍に形成されたことを特徴とするサーマ
ルヘッド。 ２、請求項１記載のグレーズガラス層と厚さが等価に形
成される厚膜焼成導体はＡｇ、あるいはＡｇ−Ｐｄ等の
印刷組成物より成ることを特徴とするサーマルヘッド。[Claims] 1. A thermal head comprising a plurality of heating resistance elements formed on a high resistance base material such as alumina, wiring conductors connected thereto, and a protective film formed to cover these. A thick film fired conductor, which constitutes the common electrode part of the thermal head and has a thickness equivalent to that of the glass layer, is formed in a partial opening located at the end of the base material of a glazed glass layer with a smooth surface provided on the base material. Then, on a substrate with a structure in which an ultra-thin nickel layer is formed on the thick-film fired conductor, the heating resistor element and the wiring conductor components are formed by sputtering, vapor deposition, etc., so as to cover these patterns. The protective film to be formed has a structure in which silicon oxide is formed on the entire surface of the substrate as an oxidation-preventing layer, and silicon nitride is formed as an abrasion-resistant layer to cover specific areas of the heat-generating resistor and the common electrode. A thermal head characterized in that a is formed near an end surface of a substrate. 2. A thermal head characterized in that the thick film fired conductor formed to have a thickness equivalent to that of the glazed glass layer according to claim 1 is made of a printing composition such as Ag or Ag-Pd.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23245088A JPH0280262A (en) | 1988-09-19 | 1988-09-19 | Thermal head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23245088A JPH0280262A (en) | 1988-09-19 | 1988-09-19 | Thermal head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0280262A true JPH0280262A (en) | 1990-03-20 |
Family
ID=16939474
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23245088A Pending JPH0280262A (en) | 1988-09-19 | 1988-09-19 | Thermal head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0280262A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH047161A (en) * | 1990-04-24 | 1992-01-10 | Rohm Co Ltd | Thick film type thermal head |
| FR2711096A1 (en) * | 1993-10-12 | 1995-04-21 | Rohm Co Ltd | Thermal head and printer using the same |
-
1988
- 1988-09-19 JP JP23245088A patent/JPH0280262A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH047161A (en) * | 1990-04-24 | 1992-01-10 | Rohm Co Ltd | Thick film type thermal head |
| FR2711096A1 (en) * | 1993-10-12 | 1995-04-21 | Rohm Co Ltd | Thermal head and printer using the same |
| CN1072566C (en) * | 1993-10-12 | 2001-10-10 | 罗姆股份有限公司 | Thermal head and printer using the same |
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