JPS6113389B2 - - Google Patents
Info
- Publication number
- JPS6113389B2 JPS6113389B2 JP56024299A JP2429981A JPS6113389B2 JP S6113389 B2 JPS6113389 B2 JP S6113389B2 JP 56024299 A JP56024299 A JP 56024299A JP 2429981 A JP2429981 A JP 2429981A JP S6113389 B2 JPS6113389 B2 JP S6113389B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor region
- voltage
- electrode
- substrate
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 17
- 239000003990 capacitor Substances 0.000 claims description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 238000003860 storage Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000000779 depleting effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2429981A JPS56124260A (en) | 1981-02-23 | 1981-02-23 | 1-transistor type memory cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2429981A JPS56124260A (en) | 1981-02-23 | 1981-02-23 | 1-transistor type memory cell |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50080894A Division JPS525224A (en) | 1975-07-02 | 1975-07-02 | 1trs-type memory cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56124260A JPS56124260A (en) | 1981-09-29 |
| JPS6113389B2 true JPS6113389B2 (US06373033-20020416-M00002.png) | 1986-04-12 |
Family
ID=12134282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2429981A Granted JPS56124260A (en) | 1981-02-23 | 1981-02-23 | 1-transistor type memory cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56124260A (US06373033-20020416-M00002.png) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61145395U (US06373033-20020416-M00002.png) * | 1985-02-26 | 1986-09-08 | ||
| JPH0260982U (US06373033-20020416-M00002.png) * | 1988-10-27 | 1990-05-07 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2507292B2 (ja) * | 1984-09-14 | 1996-06-12 | 株式会社東芝 | ダイナミツクメモリセル |
-
1981
- 1981-02-23 JP JP2429981A patent/JPS56124260A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61145395U (US06373033-20020416-M00002.png) * | 1985-02-26 | 1986-09-08 | ||
| JPH0260982U (US06373033-20020416-M00002.png) * | 1988-10-27 | 1990-05-07 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56124260A (en) | 1981-09-29 |
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