JPS6113380B2 - - Google Patents
Info
- Publication number
- JPS6113380B2 JPS6113380B2 JP52156484A JP15648477A JPS6113380B2 JP S6113380 B2 JPS6113380 B2 JP S6113380B2 JP 52156484 A JP52156484 A JP 52156484A JP 15648477 A JP15648477 A JP 15648477A JP S6113380 B2 JPS6113380 B2 JP S6113380B2
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- bonding tool
- thin metal
- metal wire
- tool
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002184 metal Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 8
- 239000008188 pellet Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 210000003323 beak Anatomy 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
- H01L2224/78302—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78313—Wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78313—Wedge
- H01L2224/78314—Shape
- H01L2224/78317—Shape of other portions
- H01L2224/78318—Shape of other portions inside the capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01039—Yttrium [Y]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は超音波ボンデイング方法及びこの方法
を達成するのに適用する超音波ボンデイング装置
の改良に関する。DETAILED DESCRIPTION OF THE INVENTION TECHNICAL FIELD OF THE INVENTION The present invention relates to improvements in an ultrasonic bonding method and an ultrasonic bonding apparatus adapted to accomplish this method.
近年集積回路素子の集積度向上ならびに個別半
導体素子の小型化が要求されており、これに伴う
外囲器の多ピン化に応じてボンデイングパツドの
縮少、ボンデイングパツド間及びパターン間の距
離を狭める方向が採られており、それにつれてバ
ードビークボンデイング方式と超音波ボンデイン
グ方式が多用される気運にある。
In recent years, there has been a demand for increased integration of integrated circuit elements and miniaturization of individual semiconductor elements, and in response to this increase in the number of pins in the package, the number of bonding pads has been reduced, and the distance between bonding pads and patterns has increased. The trend is to narrow the gap, and bird beak bonding and ultrasonic bonding methods are becoming more popular.
ところで、被ボンデイング部品への熱負荷が少
ない超音波ボンデイング方式は特に賞用される傾
向にあり、この方式では超音波を発生するホーン
に沿つてリードを配置し、このリードに設置する
ボンデイングポイント間を金属細線で架橋するこ
とが要求される。 By the way, the ultrasonic bonding method, which places less heat load on the parts to be bonded, tends to be particularly popular.In this method, a lead is placed along a horn that generates ultrasonic waves, and the bonding points installed on this lead are This requires crosslinking with thin metal wires.
このボンデイングポイントではボンデイングツ
ール先端によつて圧着された金属細線が超音波振
動を利用して所望の強度をもつて一体化される
が、金属細線が繰り出される方向に沿つて、その
径より多少大きい細長い圧着部分が形成され、２
個所の圧着部分が互に平行な関係にあるとその強
度が大きいとされている。 At this bonding point, the thin metal wire crimped by the tip of the bonding tool is integrated with the desired strength using ultrasonic vibration. An elongated crimped portion is formed, and 2
It is said that the strength is greater when the crimped parts are parallel to each other.
機能素子を形成した半導体ペレツトの組立はリ
ードフレームにダイボンデイングしてから、ペレ
ツトの一部分を占めるボンデイングパツトとリー
ドフレームに予め設けた外部リード間をワイヤボ
ンデイングによつて電気的に接続可能とする。 The semiconductor pellet with the functional element formed thereon is assembled by die bonding to a lead frame, and then the bonding pad, which occupies a portion of the pellet, and the external lead provided in advance on the lead frame can be electrically connected by wire bonding.
この機能素子の電極数に応じてリードフレーム
の形状も異なり個別半導体では第６図に示すよう
に半導体ペレツトをダイボンデイングする部分
と、このペレツトに形成したボンデイングパツド
との通電を可能とする２本の外部リードの計３本
からなる単位体を連結棒で並列に一体化する方式
が採用されている。 The shape of the lead frame varies depending on the number of electrodes of the functional element, and in the case of individual semiconductors, as shown in FIG. A method is adopted in which a unit consisting of a total of three external leads of a book is integrated in parallel using a connecting rod.
その量産効果を考慮してこの連結棒には単位体
を二十個程度一体化したものを製造ラインで処理
するのが一般的であり、このためにリードの長さ
が連結棒方向より短かい直方体となる。従つて製
造ラインで搬送される場合には搬送路巾を超えな
いように長手方向が進行方向となる。 Considering the mass production effect, it is common for this connecting rod to be made by integrating about 20 units and processing it on the manufacturing line, and for this reason, the length of the lead is shorter than the direction of the connecting rod. It becomes a rectangular parallelepiped. Therefore, when transported on a production line, the longitudinal direction is the traveling direction so as not to exceed the transport path width.
超音波ボンデイング装置には超音波を発生する
ホーンが必要であり、その先端部分にボンデイン
グツールを固定し、このボンデイングツールに対
向する位置に停止したリードフレームはそのリー
ドと超音波ホーンが平行な関係に維持される。 Ultrasonic bonding equipment requires a horn that generates ultrasonic waves.A bonding tool is fixed to the tip of the horn, and when the lead frame is stopped in a position facing the bonding tool, the leads and the ultrasonic horn are parallel to each other. will be maintained.
ところで、リードフレームには半導体ペレツト
をダイボンデイングするリードに対して斜め方向
に外部リードを配置する種類もあり、その使用数
量もかなり多いのが実情である。ワイヤボンデイ
ング装置ではボンデイングツールとリードフレー
ムの位置合せを行う手段としてボンデイングツー
ル固定する方法と、逆にリードフレームを固定と
してボンデイングツールを可変とする方法が知ら
れており、後者が通常使用されている。 By the way, there are some types of lead frames in which external leads are arranged diagonally to the leads for die bonding semiconductor pellets, and the actual situation is that they are used in quite large quantities. In wire bonding equipment, two methods are known: one is to fix the bonding tool as a means of aligning the bonding tool and the lead frame, and the other is to fix the lead frame and make the bonding tool variable; the latter is usually used. .
ワーク即ちリードフレームを固定してボンデイ
ングツールをＸ−ＹテーブルならびにＺ軸駆動機
構によつて可変とする型の超音波ボンデイング装
置により、ダイボンデイングした半導体ペレツト
のボンデイングパツトとこれより斜下向に位置す
る外部リード間をワイヤボンデイングすると第６
図がえられる。即ち、ボンデイングツールから繰
り出される金属細線はその繰り出し方向に沿つて
その径より多少大きい第１の細長い圧着部分が形
成され、この圧着部分に交叉する方向にボンデイ
ングツールを移動して、外部リードにも、この交
叉する方向に沿つた第２の圧着部分を形成する。
この結果、両圧着部分間には偏角θを生じる非平
行状態となり、架橋した金属細線部分によじれを
もたらして充分な圧着強度が得られない。
Using an ultrasonic bonding device that fixes the workpiece, that is, the lead frame, and moves the bonding tool using an X-Y table and a Z-axis drive mechanism, the die-bonded semiconductor pellet is positioned diagonally downward from the bonding spot of the die-bonded semiconductor pellet. When wire bonding is performed between the external leads, the sixth
You can get a diagram. That is, a thin metal wire fed out from a bonding tool has a first elongated crimped portion slightly larger than its diameter along the feeding direction, and the bonding tool is moved in a direction intersecting this crimped portion, and the metal wire is also bonded to the external lead. , a second crimp portion is formed along the intersecting direction.
As a result, a nonparallel state occurs in which an angle of deviation θ occurs between the two crimped portions, and the crosslinked thin metal wire portions are twisted, making it impossible to obtain sufficient crimping strength.
本発明は上記難点を除去する新規な超音波ボン
デイング方法及びその装置を提供するもので、特
にボンデイングツール以外のθ成分補正を必要と
しないものである。
The present invention provides a novel ultrasonic bonding method and apparatus for eliminating the above-mentioned difficulties, and in particular does not require any θ component correction other than the bonding tool.
この目的を達成するために、本発明ではリード
フレームとの位置合せにおけるボンデイングツー
ルの軌跡をＸ方向及びこれに直交するＹ方向に限
定する。
In order to achieve this objective, in the present invention, the trajectory of the bonding tool in alignment with the lead frame is limited to the X direction and the Y direction perpendicular thereto.
即ち、ボンデイングツールと対向する位置に搬
送されたリードフレームはそのリードと超音波ホ
ーンが平行関係を保つて配置され、このホーンの
先端部分に固定したボンデイングツールに対向し
てワーク即ちリードフレームを搬送する。このリ
ードフレームは第１図に示すように連結棒により
一体化され互に平行なリードをもち、こゝに斜め
方向に位置する第１ならびに第２のボンデイング
点Ａ，Ｃを設定する。この第１のボンデイング点
即ちＡ点での超音波ボンデイング後ボンデイング
ツールを上昇させ、繰り出した金属細線の延長線
上にあつて、第２のボンデイング点より離れて位
置する仮想Ｂ点に移動してから通常のボンデイン
グ位置より僅か上方まで下降する。次に、この移
動距離より小さい距離だけ逆方向に移動させ、更
にそのまゝＸ方向へ移動して第２のボンデイング
点Ｃでの超音波ボンデイングする方法を採用し
た。この結果ボンデイングツールの軌跡は繰り出
した金属細線の延長線と一致するＹ方向及びこれ
に直交するＸ方向に限定され各ボンデイング点に
は第２図に示すように金属細線よりやゝ大きく細
長い圧着部分が互に平行な関係を保持して設けら
れ、しかもこの圧着部分附近にいわゆるＲが形成
される。 That is, the lead frame is transported to a position facing the bonding tool, and the lead and the ultrasonic horn are placed in a parallel relationship, and the workpiece, ie, the lead frame, is transported facing the bonding tool fixed to the tip of the horn. do. As shown in FIG. 1, this lead frame has mutually parallel leads that are integrated by a connecting rod, and first and second bonding points A and C, which are located diagonally, are set here. After ultrasonic bonding at this first bonding point, that is, point A, the bonding tool is raised and moved to an imaginary point B, which is located on the extension line of the fed out thin metal wire and is located away from the second bonding point. Lowers slightly above the normal bonding position. Next, a method was adopted in which the substrate was moved in the opposite direction by a distance smaller than this moving distance, and further moved directly in the X direction to perform ultrasonic bonding at the second bonding point C. As a result, the trajectory of the bonding tool is limited to the Y direction that coincides with the extended line of the thin metal wire that has been fed out, and the X direction that is perpendicular to this, and at each bonding point there is a crimped part that is slightly larger and more slender than the thin metal wire, as shown in Figure 2. are provided in a parallel relationship with each other, and a so-called R is formed near the crimped portion.
この方法を達成するため本発明ではボンデイン
グツール先端に特殊な構造を採用した。と言うの
は、ボンデイングツールが仮想Ｂ点で下降した
際、金属細線の一部が嵌入できるガイド溝を形成
したことである。ボンデイングツール底部に開口
をもつ透孔に挿通された金属細線はＡ点でのボン
デイング後前述のように仮想Ｂ点に移送されて下
降する。この下降に伴い繰り出された金属細線は
その延長線に直立する面に位置する柱状ボンデイ
ングツール側部に形成するガイド溝に嵌入係止さ
れ、更に逆方向への移動によつてより深く嵌入す
ると共に、このガイド溝とツール底部角部等でし
ごかれて一旦形成されたループより高いループの
成形に寄与する結果となる。尚ボンデイング底部
の他部分に形成する溝はワイヤボンデイング時に
おける金属細線のズレを防止役目も果すものであ
る。 In order to achieve this method, the present invention employs a special structure at the tip of the bonding tool. This is because a guide groove is formed into which a part of the thin metal wire can fit when the bonding tool descends at the virtual point B. After bonding at point A, the thin metal wire inserted through the through hole having an opening at the bottom of the bonding tool is transferred to virtual point B and lowered as described above. The thin metal wire fed out as it descends is fitted into and locked into the guide groove formed on the side of the columnar bonding tool located on the surface perpendicular to the extension line, and is further inserted deeper as it moves in the opposite direction. This results in contributing to the formation of a loop higher than the loop once formed by squeezing the guide groove and the bottom corner of the tool. The grooves formed in other parts of the bonding bottom also serve to prevent the thin metal wire from shifting during wire bonding.
第２図及び第５図により本発明を詳述する。 The present invention will be explained in detail with reference to FIGS. 2 and 5.
第３図に示すようにボンデイングツール１は超
音波ホーン２先端部分に固定し、超音波ホーン２
はホーン支持部３に支点４で支持され、この支持
部３に設けたフオロワ６ならびにこれに係止する
カム５によつてＺ方向の変位を行う。金属細線１
１はワイヤスプール１２から導出され、ワイヤク
ランプ機構１３によりクランプするが、この機構
ではボンデイングツール１に近接して配置するク
ランプ部１３ａをクランプ支点１３ｂを介するソ
レノイド１３ｃの励磁制御によつて開閉動作を行
う。連結棒１３ｄで接続する桿杆１３ｅ，１３
e′は支点１３ｆ，１３f′により軸支し、一方の桿
杆１３ｅはワイヤクランプ部１３ａに、他方の桿
杆１３e′はフオロア１４を介してカム１５に接触
している。モータ１０の軸１０ａにはカム５，１
５を固定してワイヤクランプ機構１３を超音波ホ
ーンＺの軸方向と平行に変位させる動作と、ボン
デイングツール１をＺ方向すなわち上下方向に変
位する動作を行う。一方、モータ２０，３０は前
述の超音波ボンデイング装置を載置した基台をＸ
方向又はＹ方向に変移する駆動源であり、リード
フレームを収納するマガジン２１ａ，２１ｂは搬
送路であるワークステージ２１ｃによつて連結さ
れている。次にボンデイングツール１の構造を第
２図〜４図により説明するが、第４図にはいわゆ
るプルカツテイング方式に利用するボンデイング
ツール３１を示し、ａは正面図ｂは側面図ｃに下
面図を示す。このボンデイングツール３１は柱状
に形成され、その本体３１ａの側部部分から底部
部分に達する透孔３１ｅを設け、こゝにはワイヤ
スプール１２から導き出されクランプ機構１３に
よりクランプされる金属細線１１が挿通される。 As shown in FIG. 3, the bonding tool 1 is fixed to the tip of the ultrasonic horn 2.
is supported by a horn supporter 3 at a fulcrum 4, and is displaced in the Z direction by a follower 6 provided on the supporter 3 and a cam 5 that is engaged with the follower 6. thin metal wire 1
1 is led out from the wire spool 12 and is clamped by a wire clamp mechanism 13. In this mechanism, a clamp part 13a disposed close to the bonding tool 1 is opened and closed by controlling the excitation of a solenoid 13c via a clamp fulcrum 13b. conduct. Rods 13e, 13 connected by connecting rod 13d
e' is pivotally supported by fulcrums 13f and 13f', one rod 13e is in contact with the wire clamp portion 13a, and the other rod 13e' is in contact with the cam 15 via a follower 14. Cams 5 and 1 are attached to the shaft 10a of the motor 10.
5 is fixed and the wire clamp mechanism 13 is displaced parallel to the axial direction of the ultrasonic horn Z, and the bonding tool 1 is displaced in the Z direction, that is, in the vertical direction. On the other hand, the motors 20 and 30 move the base on which the above-mentioned ultrasonic bonding device is mounted.
Magazines 21a and 21b, which are drive sources that move in the direction or Y direction, and which store lead frames, are connected by a work stage 21c, which is a transport path. Next, the structure of the bonding tool 1 will be explained with reference to FIGS. 2 to 4. FIG. 4 shows a bonding tool 31 used in the so-called pull cutting method, in which a is a front view, b is a side view, and c is a bottom view. shows. This bonding tool 31 is formed into a columnar shape, and has a through hole 31e extending from the side part to the bottom part of the main body 31a, through which the thin metal wire 11 led out from the wire spool 12 and clamped by the clamp mechanism 13 is inserted. be done.
このｂ側面図に示したように、ボンデイングツ
ール１の底部には段部が形成されており、透孔３
１ｅが開口している部分は他の部分と不連続とな
つている。これはボンデイングツール１先端でボ
ンデイングパツドを金属細線を介して押圧する際
このボンデイングパツドを損傷する事故を防止す
るために採用した手段であり、更にボンデイング
ツール１の底部他の部分には溝３１ｂを設けて金
属細線１１を押圧する場合その位置ずれを防ぐ役
目をする。このためその深さは小さく金属細線１
１の半分以下が嵌入すれば充分である。 As shown in this side view b, a step is formed at the bottom of the bonding tool 1, and a through hole 3 is formed at the bottom of the bonding tool 1.
The part where 1e is open is discontinuous with other parts. This is a measure adopted to prevent accidents that could damage the bonding pad when the tip of the bonding tool 1 presses the bonding pad through a thin metal wire. 31b is provided to prevent displacement of the thin metal wire 11 when it is pressed. Therefore, the depth is small and the thin metal wire 1
It is sufficient if less than half of 1 is inserted.
柱状のボンデイング本体側部分と対称的な他部
分にはガイド溝３１ｃを設ける。透孔３１ｅから
繰り出される延長線に対向するボンデイングツー
ル１の底部の他の部分には溝３１ｂを設けるのは
前述の通りであるが、この溝にこのガイド溝３１
ｃ端が接続する。一方、第５図にはウエツジガツ
ト方式に利用するボンデイングツールの形状をａ
正面図ｂ側面図ｃ底面図により示す。この方式で
は金属細線１１が繰り出される透孔４１ｅが柱状
のツール本体４１ａのほゞ中心に位置し、こゝか
らは前述の溝３１ｂと同様に機能する溝４１ｂが
形成されこれらに接続するガイド溝４１ｃがボン
デイングツール４１ａの側部に形成される。ボン
デイングツール１は前述のように仮設位置Ｂに向
けて移動するが、この移動方向はこの溝４１ｂの
延長方向即ち繰り出された金属細線の延長線上に
あり、従つてこの金属細線を嵌入する機能を果す
ガイド溝４１ｃは溝４１ｂ方向に直立する面に位
置し、且つ移動する方向の逆方向のツール側部に
形成する。 A guide groove 31c is provided in another portion symmetrical to the columnar bonding body side portion. As described above, the groove 31b is provided in the other part of the bottom of the bonding tool 1 facing the extension line drawn out from the through hole 31e.
C end connects. On the other hand, Fig. 5 shows the shape of the bonding tool used in the wedge-gut method.
It is shown in front view b side view c bottom view. In this method, a through hole 41e through which the thin metal wire 11 is fed out is located approximately at the center of the columnar tool body 41a, and a groove 41b that functions in the same manner as the aforementioned groove 31b is formed from this hole, and a guide groove is connected to the hole 41e. 41c is formed on the side of bonding tool 41a. As described above, the bonding tool 1 moves toward the temporary position B, but the direction of movement is on the extension direction of the groove 41b, that is, the extension line of the drawn-out thin metal wire, and therefore the bonding tool 1 has no function of inserting the thin metal wire. The guide groove 41c is located on a surface that stands upright in the direction of the groove 41b, and is formed on the side of the tool in the opposite direction to the moving direction.
本発明では互に平行関係をもつリードに斜め方
向に位置するボンデイング点を設け、このリード
に対して平行に配置する超音波ホーン端にボンデ
イングツールを固定する。このボンデイングツー
ルより繰り出された金属細線をこの第１ボンデイ
ング点にボンデイングしてその径よりやゝ大きく
細長い圧着部分を形成してから、ツールを上方に
移動後繰り出された金属細線の延長線上に位置
し、第２ボンデイング点より遠い仮想Ｂ点に移し
た上で通常のボンデイング位置より僅か上方迄下
降する。この時金属細線はガイド溝に少し嵌入さ
れる。次にこの移送方向と逆にボンデイングツー
ルを転送するので金属細線はより深くガイド溝に
嵌入された後、延長線に直交するＸ方向に移送し
てＣ点即ち第２ボンデイング点でボンデイングさ
れる。
In the present invention, bonding points are provided in diagonal directions on leads that are parallel to each other, and a bonding tool is fixed to the end of an ultrasonic horn that is arranged parallel to the leads. The thin metal wire fed out from this bonding tool is bonded to this first bonding point to form an elongated crimped part slightly larger than the diameter of the bonding point, and then the tool is moved upward and positioned on the extension line of the thin metal wire fed out. Then, the bonding point is moved to a virtual point B, which is farther from the second bonding point, and then lowered to a position slightly above the normal bonding position. At this time, the thin metal wire is slightly inserted into the guide groove. Next, the bonding tool is transferred in the opposite direction to this transfer direction, so that the thin metal wire is inserted deeper into the guide groove, and then transferred in the X direction perpendicular to the extension line to be bonded at point C, that is, the second bonding point.
従つて、ボンデイングツールの軌跡は金属細線
が繰り出される方向の延長線に一致するＹ方向
と、これに直交するＸ方向だけに限られる。しか
もボンデイングによつて得られる圧着部分は互に
平行関係となり、しかも僅かな曲率半径をもつ曲
線部分をもつ金属細線によつて架橋される。この
ためによじれによる強度劣化を防止する顕著な効
果を発揮する。 Therefore, the trajectory of the bonding tool is limited to only the Y direction, which corresponds to the extension of the direction in which the thin metal wire is fed out, and the X direction, which is perpendicular to this direction. Furthermore, the crimped portions obtained by bonding are parallel to each other and bridged by thin metal wires having curved portions with a slight radius of curvature. For this reason, it exhibits a remarkable effect of preventing strength deterioration due to twisting.
しかも、このボンデイングツールの軌跡を達成
するのに、その側部にガイド溝を設置したので、
仮想Ｂ点からの逆送時には金属細線をしごくこと
によつてより高いループ成形を助成する。 Moreover, in order to achieve the trajectory of this bonding tool, we installed a guide groove on the side of it.
When refeeding from the virtual point B, the fine metal wire is squeezed to help form a higher loop.
第１図は本発明に係るワイラボンデイング方法
を説明する上面図、第２図は本発明方法によるワ
イヤボンデイング後の半導体素子上面図、第３図
は本発明のワイヤボンデイング装置の斜視図、第
４図ａ〜ｃ及び第５図ａ〜ｃは本発明に係るボン
デイングツールを示しａは正面図、ｂは側面断面
図、ｃは底面図、第６図は従来の半導体素子のワ
イヤボンデイング状態を示す上面図である。
１，３１ａ，４１ａ……ボンデイングツール、
２……超音波ホール、３〜６……ボンデイングツ
ールのＺ方向変位機構、３……ホーン支持部、４
……支点、５……カム、６……フオロワ、１１…
…ボンデイングワイヤ、１３……ワイヤクランプ
機構、３１ｅ，４１ｅ……透孔、３１ｃ，４１ｃ
……ガイド溝。
FIG. 1 is a top view illustrating the wire bonding method according to the present invention, FIG. 2 is a top view of a semiconductor device after wire bonding according to the method of the present invention, FIG. 3 is a perspective view of the wire bonding apparatus of the present invention, and FIG. Figures a to c and Figures 5 a to c show a bonding tool according to the present invention; a is a front view, b is a side sectional view, c is a bottom view, and Figure 6 shows a conventional wire bonding state of a semiconductor element. FIG. 1, 31a, 41a...bonding tool,
2...Ultrasonic hole, 3-6...Z direction displacement mechanism of bonding tool, 3...Horn support part, 4
...Fulcrum, 5...Cam, 6...Follower, 11...
... bonding wire, 13 ... wire clamp mechanism, 31e, 41e ... through hole, 31c, 41c
...Guide groove.
Claims (1)
超音波ホーンと、この先端部分に固定する柱状ボ
ンデイングツールと、このツールをＸ，Ｙ及びＺ
方向に移動可能とする駆動機構と、前記柱状ボン
デイングツールの軸方向を貫通しかつ底部に関口
する透孔と、この底部を横切る溝と、この溝に
ほゞ直立する面に位置する前記柱状ボンデイング
ツール側面に形成するガイド溝とを具備し、前記
透孔より繰り出す金属細線の延長線に一致するＹ
方向に仮設する位置に前記柱状ボンデイングツー
ルを移動してボンデイング位置より僅かに離れる
位置まで下降することにより前記ガイド溝に前記
透孔から繰り出す金属細線を係止し、前記柱状ボ
ンデイングツールを、前記Ｙ方向に逆送すること
によりこの金属細線をガイド溝に嵌合することを
特徴とするワイヤボンデイング装置。1. An ultrasonic horn placed along leads formed parallel to each other, a columnar bonding tool fixed to the tip of this horn, and
a drive mechanism capable of moving in the direction; a through hole passing through the columnar bonding tool in the axial direction and opening at the bottom; a groove crossing the bottom; and a columnar bonding tool located on a surface substantially perpendicular to the groove. a guide groove formed on the side surface of the tool, and a Y that matches the extension line of the thin metal wire fed out from the through hole.
By moving the columnar bonding tool to a temporary position in the direction and lowering it to a position slightly away from the bonding position, the thin metal wire fed out from the through hole is locked in the guide groove, and the columnar bonding tool is moved to the Y direction. A wire bonding device characterized in that the thin metal wire is fitted into a guide groove by feeding the thin metal wire in a reverse direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15648477A JPS5489958A (en) | 1977-12-27 | 1977-12-27 | Wire bonding apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15648477A JPS5489958A (en) | 1977-12-27 | 1977-12-27 | Wire bonding apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5489958A JPS5489958A (en) | 1979-07-17 |
| JPS6113380B2 true JPS6113380B2 (en) | 1986-04-12 |
Family
ID=15628759
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15648477A Granted JPS5489958A (en) | 1977-12-27 | 1977-12-27 | Wire bonding apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5489958A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58143A (en) * | 1981-06-25 | 1983-01-05 | Shinkawa Ltd | Ultrasonic wire bonding method |
| JP2008028236A (en) * | 2006-07-24 | 2008-02-07 | Shinko Electric Ind Co Ltd | Bonding tool, and bump forming method |
| WO2013067270A1 (en) * | 2011-11-04 | 2013-05-10 | Invensas Corporation | Bonding wedge |
-
1977
- 1977-12-27 JP JP15648477A patent/JPS5489958A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5489958A (en) | 1979-07-17 |
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