JPS61127695A - 分子線結晶成長装置 - Google Patents

分子線結晶成長装置

Info

Publication number
JPS61127695A
JPS61127695A JP24716984A JP24716984A JPS61127695A JP S61127695 A JPS61127695 A JP S61127695A JP 24716984 A JP24716984 A JP 24716984A JP 24716984 A JP24716984 A JP 24716984A JP S61127695 A JPS61127695 A JP S61127695A
Authority
JP
Japan
Prior art keywords
molecular beam
crystal growth
shutter
electron
fluorescent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24716984A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0566354B2 (enExample
Inventor
Takao Taguchi
田口　孝雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP24716984A priority Critical patent/JPS61127695A/ja
Publication of JPS61127695A publication Critical patent/JPS61127695A/ja
Publication of JPH0566354B2 publication Critical patent/JPH0566354B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP24716984A 1984-11-22 1984-11-22 分子線結晶成長装置 Granted JPS61127695A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24716984A JPS61127695A (ja) 1984-11-22 1984-11-22 分子線結晶成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24716984A JPS61127695A (ja) 1984-11-22 1984-11-22 分子線結晶成長装置

Publications (2)

Publication Number Publication Date
JPS61127695A true JPS61127695A (ja) 1986-06-14
JPH0566354B2 JPH0566354B2 (enExample) 1993-09-21

Family

ID=17159464

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24716984A Granted JPS61127695A (ja) 1984-11-22 1984-11-22 分子線結晶成長装置

Country Status (1)

Country Link
JP (1) JPS61127695A (enExample)

Also Published As

Publication number Publication date
JPH0566354B2 (enExample) 1993-09-21

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