JPH057253Y2 - - Google Patents

Info

Publication number
JPH057253Y2
JPH057253Y2 JP1988044415U JP4441588U JPH057253Y2 JP H057253 Y2 JPH057253 Y2 JP H057253Y2 JP 1988044415 U JP1988044415 U JP 1988044415U JP 4441588 U JP4441588 U JP 4441588U JP H057253 Y2 JPH057253 Y2 JP H057253Y2
Authority
JP
Japan
Prior art keywords
evaporation source
growth chamber
growth
molecular beam
substrate holder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1988044415U
Other languages
English (en)
Japanese (ja)
Other versions
JPH01147273U (enExample
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1988044415U priority Critical patent/JPH057253Y2/ja
Publication of JPH01147273U publication Critical patent/JPH01147273U/ja
Application granted granted Critical
Publication of JPH057253Y2 publication Critical patent/JPH057253Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP1988044415U 1988-03-31 1988-03-31 Expired - Lifetime JPH057253Y2 (enExample)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1988044415U JPH057253Y2 (enExample) 1988-03-31 1988-03-31

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988044415U JPH057253Y2 (enExample) 1988-03-31 1988-03-31

Publications (2)

Publication Number Publication Date
JPH01147273U JPH01147273U (enExample) 1989-10-11
JPH057253Y2 true JPH057253Y2 (enExample) 1993-02-24

Family

ID=31270774

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1988044415U Expired - Lifetime JPH057253Y2 (enExample) 1988-03-31 1988-03-31

Country Status (1)

Country Link
JP (1) JPH057253Y2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102024202739A1 (de) 2023-03-31 2024-10-02 Renesas Electronics Corporation Halbleitervorrichtung, zeitmessverfahren und zeitmessprogramm

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102024202739A1 (de) 2023-03-31 2024-10-02 Renesas Electronics Corporation Halbleitervorrichtung, zeitmessverfahren und zeitmessprogramm

Also Published As

Publication number Publication date
JPH01147273U (enExample) 1989-10-11

Similar Documents

Publication Publication Date Title
DE69228467T2 (de) Verfahren zum epitaktischen Wachsen eines Halbleiterkristalls
US4159919A (en) Molecular beam epitaxy using premixing
US5756375A (en) Semiconductor growth method with thickness control
US6970532B2 (en) Method and apparatus for measuring thin film, and thin film deposition system
US5399521A (en) Method of semiconductor layer growth by MBE
DE3526844A1 (de) Einrichtung zum bilden eines kristalls aus einem halbleiter
US4770895A (en) Control of uniformity of growing alloy film
US5525156A (en) Apparatus for epitaxially growing a chemical compound crystal
US5463977A (en) Method of and apparatus for epitaxially growing chemical compound crystal
Chalmers et al. Real‐time control of molecular beam epitaxy by optical‐based flux monitoring
Maracas et al. In situ spectroscopic ellipsometry in molecular beam epitaxy
KR20010023079A (ko) 박막의 원 위치 두께와 화학양론 측정을 위한 장치 및 방법
US6521042B1 (en) Semiconductor growth method
JPH07153692A (ja) 半導体基板上に薄膜を成長させる方法および装置
Kasai et al. Atomic absorption spectroscopy system for flux monitoring and atomic-layer control of molecular beam epitaxial growth of BiSrCaCuO
Berger et al. Omega-Scan: An X-ray tool for the characterization of crystal properties
KR950007482B1 (ko) 기상성장방법
JPS5948786B2 (ja) 分子線結晶成長方法
US5364492A (en) Method of deposing by molecular beam epitaxy
JPH0796474B2 (ja) 分子線エピタキシー装置
US5598260A (en) Apparatus and method for optical-based flux monitoring of an effusion cell adjacent the output orifice
JP4331936B2 (ja) 化合物半導体の製造方法及び化合物半導体の製造装置
McClintock et al. Optical measurement of Ga beam flux for MBE
JP2818124B2 (ja) 半導体装置の製法
JPS61125123A (ja) 分子線結晶成長装置