JPS61126551A - Ｘ線リソグラフイ−用マスク構造体の製造方法 - Google Patents

Ｘ線リソグラフイ−用マスク構造体の製造方法

Info

Publication number
JPS61126551A
JPS61126551A JP59248162A JP24816284A JPS61126551A JP S61126551 A JPS61126551 A JP S61126551A JP 59248162 A JP59248162 A JP 59248162A JP 24816284 A JP24816284 A JP 24816284A JP S61126551 A JPS61126551 A JP S61126551A
Authority
JP
Japan
Prior art keywords
mask
aluminum nitride
film
ray
holding body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59248162A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0481855B2 (enrdf_load_stackoverflow
Inventor
Hideo Kato
日出夫 加藤
Masaaki Matsushima
正明 松島
Keiko Matsuda
啓子 松田
Hirofumi Shibata
浩文 柴田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP59248162A priority Critical patent/JPS61126551A/ja
Priority to US06/794,180 priority patent/US4677042A/en
Priority to DE19853539201 priority patent/DE3539201A1/de
Publication of JPS61126551A publication Critical patent/JPS61126551A/ja
Publication of JPH0481855B2 publication Critical patent/JPH0481855B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP59248162A 1984-11-05 1984-11-26 Ｘ線リソグラフイ−用マスク構造体の製造方法 Granted JPS61126551A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP59248162A JPS61126551A (ja) 1984-11-26 1984-11-26 Ｘ線リソグラフイ−用マスク構造体の製造方法
US06/794,180 US4677042A (en) 1984-11-05 1985-11-01 Mask structure for lithography, method for preparation thereof and lithographic method
DE19853539201 DE3539201A1 (de) 1984-11-05 1985-11-05 Maskenstruktur fuer die lithografie, verfahren zu ihrer herstellung und lithografieverfahren

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59248162A JPS61126551A (ja) 1984-11-26 1984-11-26 Ｘ線リソグラフイ−用マスク構造体の製造方法

Publications (2)

Publication Number Publication Date
JPS61126551A true JPS61126551A (ja) 1986-06-14
JPH0481855B2 JPH0481855B2 (enrdf_load_stackoverflow) 1992-12-25

Family

ID=17174137

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59248162A Granted JPS61126551A (ja) 1984-11-05 1984-11-26 Ｘ線リソグラフイ−用マスク構造体の製造方法

Country Status (1)

Country Link
JP (1) JPS61126551A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63283023A (ja) * 1987-05-14 1988-11-18 Oki Electric Ind Co Ltd Ｘ線露光マスク用メンブレンの製造方法
US5773177A (en) * 1989-03-09 1998-06-30 Canon Kabushiki Kaisha X-ray mask structure, and X-ray exposure process
US6284411B1 (en) 1996-10-02 2001-09-04 Japan Storage Battery Co., Ltd. Valve regulated type battery and producing method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63283023A (ja) * 1987-05-14 1988-11-18 Oki Electric Ind Co Ltd Ｘ線露光マスク用メンブレンの製造方法
US5773177A (en) * 1989-03-09 1998-06-30 Canon Kabushiki Kaisha X-ray mask structure, and X-ray exposure process
US6284411B1 (en) 1996-10-02 2001-09-04 Japan Storage Battery Co., Ltd. Valve regulated type battery and producing method thereof

Also Published As

Publication number Publication date
JPH0481855B2 (enrdf_load_stackoverflow) 1992-12-25

Similar Documents

Publication Publication Date Title
US4677042A (en) Mask structure for lithography, method for preparation thereof and lithographic method
US4837123A (en) Mask structure for lithography, method of preparation thereof and lithographic method
DE102019100839B4 (de) Fotomaskenanordnung mit reflektierender fotomaske und verfahren zum herstellen einer reflektierenden fotomaske
US4170512A (en) Method of manufacture of a soft-X-ray mask
JPS61126551A (ja) Ｘ線リソグラフイ−用マスク構造体の製造方法
JPH0481856B2 (enrdf_load_stackoverflow)
JPH0481852B2 (enrdf_load_stackoverflow)
JPH0690998B2 (ja) Ｘ線リソグラフィー用マスク構造体の製造方法
JP2961690B2 (ja) Ｘ線マスク及びその製造方法
JPS61249056A (ja) リソグラフイ−用マスク構造体
JPH0481853B2 (enrdf_load_stackoverflow)
JPH0656831B2 (ja) リソグラフィー用マスク構造体の製造方法、及び薄膜の製造方法
JPH0481854B2 (enrdf_load_stackoverflow)
JPS62119924A (ja) 透過マスクの作製方法
JPH0482048B2 (enrdf_load_stackoverflow)
JP2694140B2 (ja) Ｘ線マスク及びその製造方法
JPH0482049B2 (enrdf_load_stackoverflow)
JPH06230561A (ja) リソグラフィー用ペリクル膜の製造方法
JPH0482047B2 (enrdf_load_stackoverflow)
JPH031821B2 (enrdf_load_stackoverflow)
JPS62158324A (ja) Ｘ線露光用マスクの製造方法
JPS61110139A (ja) Ｘ線リソグラフイ−法及びｘ線リソグラフイ−用マスク保持体
JPS63169026A (ja) リソグラフイ−用マスク構造体
JPS6068337A (ja) Ｘ線リソグラフィ−用マスクの作成方法
JPS63201601A (ja) 光学用窓材及びその製造方法