JPS61125169A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS61125169A JPS61125169A JP59246308A JP24630884A JPS61125169A JP S61125169 A JPS61125169 A JP S61125169A JP 59246308 A JP59246308 A JP 59246308A JP 24630884 A JP24630884 A JP 24630884A JP S61125169 A JPS61125169 A JP S61125169A
- Authority
- JP
- Japan
- Prior art keywords
- island
- forming
- region
- recrystallizing
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 6
- 239000004065 semiconductor Substances 0.000 title claims description 21
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000002844 melting Methods 0.000 claims abstract 4
- 230000008018 melting Effects 0.000 claims abstract 4
- 238000000034 method Methods 0.000 abstract description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052681 coesite Inorganic materials 0.000 abstract description 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 4
- 239000000377 silicon dioxide Substances 0.000 abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 4
- 229910052682 stishovite Inorganic materials 0.000 abstract description 4
- 229910052905 tridymite Inorganic materials 0.000 abstract description 4
- 230000003647 oxidation Effects 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- 238000001259 photo etching Methods 0.000 abstract description 2
- -1 etc. Inorganic materials 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 239000013078 crystal Substances 0.000 description 9
- 238000001953 recrystallisation Methods 0.000 description 6
- 239000012212 insulator Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 101150114751 SEM1 gene Proteins 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
Landscapes
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59246308A JPS61125169A (ja) | 1984-11-22 | 1984-11-22 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59246308A JPS61125169A (ja) | 1984-11-22 | 1984-11-22 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61125169A true JPS61125169A (ja) | 1986-06-12 |
| JPH0340513B2 JPH0340513B2 (en:Method) | 1991-06-19 |
Family
ID=17146617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59246308A Granted JPS61125169A (ja) | 1984-11-22 | 1984-11-22 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61125169A (en:Method) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01281735A (ja) * | 1988-05-07 | 1989-11-13 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP2011101057A (ja) * | 2002-01-28 | 2011-05-19 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58114440A (ja) * | 1981-12-28 | 1983-07-07 | Fujitsu Ltd | 半導体装置用基板の製造方法 |
-
1984
- 1984-11-22 JP JP59246308A patent/JPS61125169A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58114440A (ja) * | 1981-12-28 | 1983-07-07 | Fujitsu Ltd | 半導体装置用基板の製造方法 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01281735A (ja) * | 1988-05-07 | 1989-11-13 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP2011101057A (ja) * | 2002-01-28 | 2011-05-19 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0340513B2 (en:Method) | 1991-06-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |