JPS6111916B2 - - Google Patents
Info
- Publication number
- JPS6111916B2 JPS6111916B2 JP15264183A JP15264183A JPS6111916B2 JP S6111916 B2 JPS6111916 B2 JP S6111916B2 JP 15264183 A JP15264183 A JP 15264183A JP 15264183 A JP15264183 A JP 15264183A JP S6111916 B2 JPS6111916 B2 JP S6111916B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- crystal
- ribbon crystal
- manufacturing
- die
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 50
- 229910052710 silicon Inorganic materials 0.000 claims description 50
- 239000010703 silicon Substances 0.000 claims description 50
- 239000013078 crystal Substances 0.000 claims description 41
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 17
- 239000002994 raw material Substances 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 8
- 230000000630 rising effect Effects 0.000 claims description 3
- 239000007788 liquid Substances 0.000 description 10
- 230000007423 decrease Effects 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 101700004678 SLIT3 Proteins 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 102100027339 Slit homolog 3 protein Human genes 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15264183A JPS6046995A (ja) | 1983-08-22 | 1983-08-22 | シリコン・リボン結晶の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15264183A JPS6046995A (ja) | 1983-08-22 | 1983-08-22 | シリコン・リボン結晶の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6046995A JPS6046995A (ja) | 1985-03-14 |
| JPS6111916B2 true JPS6111916B2 (is) | 1986-04-05 |
Family
ID=15544842
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15264183A Granted JPS6046995A (ja) | 1983-08-22 | 1983-08-22 | シリコン・リボン結晶の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6046995A (is) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02134085U (is) * | 1989-04-13 | 1990-11-07 | ||
| JPH0319515U (is) * | 1989-07-10 | 1991-02-26 | ||
| JPH0525511Y2 (is) * | 1988-04-08 | 1993-06-28 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6090199A (en) * | 1999-05-03 | 2000-07-18 | Evergreen Solar, Inc. | Continuous melt replenishment for crystal growth |
| JP2012229134A (ja) * | 2011-04-25 | 2012-11-22 | Fujikura Ltd | 酸化物共晶体の製造方法 |
-
1983
- 1983-08-22 JP JP15264183A patent/JPS6046995A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0525511Y2 (is) * | 1988-04-08 | 1993-06-28 | ||
| JPH02134085U (is) * | 1989-04-13 | 1990-11-07 | ||
| JPH0319515U (is) * | 1989-07-10 | 1991-02-26 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6046995A (ja) | 1985-03-14 |
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