JPS6111913B2 - - Google Patents
Info
- Publication number
- JPS6111913B2 JPS6111913B2 JP5353483A JP5353483A JPS6111913B2 JP S6111913 B2 JPS6111913 B2 JP S6111913B2 JP 5353483 A JP5353483 A JP 5353483A JP 5353483 A JP5353483 A JP 5353483A JP S6111913 B2 JPS6111913 B2 JP S6111913B2
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- crystal
- temperature
- silicon
- band
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 96
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 79
- 229910052710 silicon Inorganic materials 0.000 claims description 79
- 239000010703 silicon Substances 0.000 claims description 79
- 239000007788 liquid Substances 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000010586 diagram Methods 0.000 description 12
- 230000005499 meniscus Effects 0.000 description 12
- 238000000034 method Methods 0.000 description 8
- 230000007423 decrease Effects 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5353483A JPS59182292A (ja) | 1983-03-31 | 1983-03-31 | 帯状シリコン結晶製造装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5353483A JPS59182292A (ja) | 1983-03-31 | 1983-03-31 | 帯状シリコン結晶製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59182292A JPS59182292A (ja) | 1984-10-17 |
| JPS6111913B2 true JPS6111913B2 (de) | 1986-04-05 |
Family
ID=12945467
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5353483A Granted JPS59182292A (ja) | 1983-03-31 | 1983-03-31 | 帯状シリコン結晶製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59182292A (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03254618A (ja) * | 1990-01-19 | 1991-11-13 | Hakodate Seimo Sengu Kk | 魚を生きたまま保つ方法及び装置 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014057981A (ja) * | 2012-09-18 | 2014-04-03 | Toyota Motor Corp | 引上式連続鋳造装置及び引上式連続鋳造方法 |
-
1983
- 1983-03-31 JP JP5353483A patent/JPS59182292A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03254618A (ja) * | 1990-01-19 | 1991-11-13 | Hakodate Seimo Sengu Kk | 魚を生きたまま保つ方法及び装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59182292A (ja) | 1984-10-17 |
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