JPS61115328A - 半導体製造方法 - Google Patents
半導体製造方法Info
- Publication number
- JPS61115328A JPS61115328A JP23674084A JP23674084A JPS61115328A JP S61115328 A JPS61115328 A JP S61115328A JP 23674084 A JP23674084 A JP 23674084A JP 23674084 A JP23674084 A JP 23674084A JP S61115328 A JPS61115328 A JP S61115328A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- rare gas
- resonance
- thin film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000004065 semiconductor Substances 0.000 title claims description 7
- 239000007789 gas Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000010409 thin film Substances 0.000 claims abstract description 10
- 239000012495 reaction gas Substances 0.000 claims description 7
- 230000005855 radiation Effects 0.000 claims description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052753 mercury Inorganic materials 0.000 abstract description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052724 xenon Inorganic materials 0.000 abstract description 8
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 abstract description 8
- 238000011109 contamination Methods 0.000 abstract description 7
- 238000005530 etching Methods 0.000 abstract description 7
- 229910052786 argon Inorganic materials 0.000 abstract description 5
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 abstract description 4
- 238000000427 thin-film deposition Methods 0.000 abstract description 4
- 239000003054 catalyst Substances 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 abstract description 3
- 230000001235 sensitizing effect Effects 0.000 abstract description 3
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 abstract description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 abstract 2
- 229910052743 krypton Inorganic materials 0.000 abstract 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000012808 vapor phase Substances 0.000 abstract 1
- 208000017983 photosensitivity disease Diseases 0.000 description 7
- 231100000434 photosensitization Toxicity 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 239000000376 reactant Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052756 noble gas Inorganic materials 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 230000015843 photosynthesis, light reaction Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23674084A JPS61115328A (ja) | 1984-11-12 | 1984-11-12 | 半導体製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23674084A JPS61115328A (ja) | 1984-11-12 | 1984-11-12 | 半導体製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61115328A true JPS61115328A (ja) | 1986-06-02 |
| JPH0558565B2 JPH0558565B2 (enrdf_load_stackoverflow) | 1993-08-26 |
Family
ID=17005080
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23674084A Granted JPS61115328A (ja) | 1984-11-12 | 1984-11-12 | 半導体製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61115328A (enrdf_load_stackoverflow) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5932122A (ja) * | 1982-08-16 | 1984-02-21 | Hitachi Ltd | 表面改質装置 |
-
1984
- 1984-11-12 JP JP23674084A patent/JPS61115328A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5932122A (ja) * | 1982-08-16 | 1984-02-21 | Hitachi Ltd | 表面改質装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0558565B2 (enrdf_load_stackoverflow) | 1993-08-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |