JPS61111546A - Semiconductor etching device - Google Patents

Semiconductor etching device

Info

Publication number
JPS61111546A
JPS61111546A JP23272284A JP23272284A JPS61111546A JP S61111546 A JPS61111546 A JP S61111546A JP 23272284 A JP23272284 A JP 23272284A JP 23272284 A JP23272284 A JP 23272284A JP S61111546 A JPS61111546 A JP S61111546A
Authority
JP
Japan
Prior art keywords
wafer
chemical solution
nozzles
wafers
spray
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23272284A
Other languages
Japanese (ja)
Inventor
Masahiko Sado
佐渡　政彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Yamagata Ltd
Original Assignee
NEC Yamagata Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Yamagata Ltd filed Critical NEC Yamagata Ltd
Priority to JP23272284A priority Critical patent/JPS61111546A/en
Publication of JPS61111546A publication Critical patent/JPS61111546A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To enable a uniform etching speed to be obtained with in the wafer surface even in wafers of large diameter, by a method wherein a chemical solution is sprayed out of a plurality of nozzles while a wafer is rotated. CONSTITUTION:A chemical solution is sprayed out of a plurality of nozzles 2, 3 to a wafer 1 the treated piece. The spray nozzles 2, 3 use nozzles capable of angle adjustment and allow the uniform spray of chemical solution over the whole wafer by rotation of the wafer. Therefore, the title device can yield a uniform etching speed even with wafers of large diameter.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、半導体を製造する際に使用する装置で、特
に半導体ウェーハ上の金属層をウェーノ・を回転させな
がら薬液をスプレー噴霧して腐蝕除去する装置に関する
ものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an apparatus used in manufacturing semiconductors, and in particular, corrodes a metal layer on a semiconductor wafer by spraying a chemical solution while rotating a wafer. It relates to a removal device.

〔従来の技術〕[Conventional technology]

従来、この種の装置は単一のノズルを使用しウェーハを
一枚づつ回転させながら、薬液を斜めからスプレー噴霧
し、遠心力によりウェーハ面全体く薬液が行き渡るよう
にし、均一な速度で選択腐食させていた。Conventionally, this type of equipment uses a single nozzle to rotate the wafers one by one and spray the chemical solution diagonally, using centrifugal force to distribute the chemical solution over the entire wafer surface and selectively corrode the wafers at a uniform rate. I was letting it happen.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかし、小口径のウェーハ（φ１００ｍｍ以下）に使用
する場合は均一な選択腐食ができるが、ウェーハが大口
径（φ１２５ｍｍ以上）になるとウェーハの面内でエツ
チング速度が変わるという問題があった。However, when used on small-diameter wafers (φ100 mm or less), uniform selective etching can be performed, but when the wafer becomes large-diameter (φ125 mm or more), there is a problem in that the etching rate changes within the plane of the wafer.

〔問題点を解決するための手段〕[Means for solving problems]

本発明によれば、ウェーハを回転させながら複数のノズ
ル（例えば２個の場合は、斜めと真上から）より薬液を
スプレー噴霧することにより、大口径のウェーハにおい
てもウェーハの面内で均一なエツチング速度を得られる
エツチング装置を得る。According to the present invention, by spraying a chemical solution from multiple nozzles (for example, from diagonally and directly above in the case of two nozzles) while rotating the wafer, even large diameter wafers can be sprayed uniformly within the wafer surface. To obtain an etching device that can obtain etching speed.

つぎに図面を参照して本発明をより詳細に説明する。Next, the present invention will be explained in more detail with reference to the drawings.

第３図、および第４図を参照して、まず従来のエツチン
グ装置を説明する。被処理物のウェーハ１を従来の単一
スプレーノズル２により薬液をスプレーノズルしてエツ
チングしている。第２図の破線円内は薬液の当たる範囲
であり矢印はウェーハの回転方向である。First, a conventional etching apparatus will be explained with reference to FIGS. 3 and 4. A wafer 1 to be processed is etched by spraying a chemical solution using a conventional single spray nozzle 2. The area within the broken line circle in FIG. 2 is the area where the chemical solution hits, and the arrow indicates the direction of rotation of the wafer.

かかるエツチング装置では、ウェーハ１が小口径の場合
は比較的均一に腐食できるが、ウェーノー１が大口径化
すると腐食ムラが生じていた。In such an etching apparatus, when the wafer 1 has a small diameter, it can be corroded relatively uniformly, but when the wafer 1 has a large diameter, uneven corrosion occurs.

〔実施例〕〔Example〕

第１図、および第２図を参照して２個のノズルを使用し
た場合の実施例を説明する。被処理物のウェーハ１に、
複数のスプレーノズル２．３より薬液をスプレー噴霧し
ている。スプレーノズル２゜３は角度調整が可能なノズ
ルを使用しており、ウェーハを回転させることにより、
ウェーノ・全体に均一に薬液がスプレー噴霧される。従
って、大口径ウェーハであっても均一なエツチング速度
の得られる装置となっている。An example in which two nozzles are used will be described with reference to FIGS. 1 and 2. On the wafer 1 of the processing object,
A chemical solution is sprayed from a plurality of spray nozzles 2.3. Spray nozzle 2゜3 uses a nozzle whose angle can be adjusted, and by rotating the wafer,
The chemical solution is sprayed evenly over the entire surface. Therefore, the apparatus is capable of achieving a uniform etching rate even for large-diameter wafers.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、従来ウェーハ面内でエツチング速度の
変化が問題となっていた大型ウェーハも均一なエツチン
グを行なうことが出来るという効果がある。According to the present invention, even large wafers, for which variation in etching speed within the wafer plane has conventionally been a problem, can be uniformly etched.

【図面の簡単な説明】 第１図は本発明の一実施例による側面図であり、第２図
は第１図の平面図である。 第３図は従来のエツチング装置の側面図であり、第４図
は第３図の平面図である。。 １・・・・・・ウェーハ、２，３・・・・・・スプレー
ノズル。 Ｘ。 第３図 帛２図 第４　図BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a side view according to an embodiment of the present invention, and FIG. 2 is a plan view of FIG. 1. FIG. 3 is a side view of a conventional etching apparatus, and FIG. 4 is a plan view of FIG. 3. . 1...Wafer, 2,3...Spray nozzle. X. Figure 3 Figure 2 Figure 4

Claims (1)

【特許請求の範囲】[Claims] 　半導体基板上の金属層を回転しながら薬液を噴霧照射
して腐蝕する装置において、角度調整が可能な複数のノ
ズルを備えたことを特徴とする半導体用エッチング装置
。What is claimed is: 1. An etching device for semiconductors that corrodes a metal layer on a semiconductor substrate by spraying and irradiating a metal layer on a semiconductor substrate while rotating, the device comprising a plurality of nozzles whose angles can be adjusted.
JP23272284A 1984-11-05 1984-11-05 Semiconductor etching device Pending JPS61111546A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23272284A JPS61111546A (en) 1984-11-05 1984-11-05 Semiconductor etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23272284A JPS61111546A (en) 1984-11-05 1984-11-05 Semiconductor etching device

Publications (1)

Publication Number Publication Date
JPS61111546A true JPS61111546A (en) 1986-05-29

Family

ID=16943758

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23272284A Pending JPS61111546A (en) 1984-11-05 1984-11-05 Semiconductor etching device

Country Status (1)

Country Link
JP (1) JPS61111546A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5127984A (en) * 1991-05-02 1992-07-07 Avantek, Inc. Rapid wafer thinning process
KR100519963B1 (en) * 1998-04-08 2005-12-20 삼성전자주식회사 How to adjust LCD panel air knife device and air knife device
JP2008047637A (en) * 2006-08-11 2008-02-28 Fujikura Ltd Wafer wet processing method and wafer etching apparatus
JP2009105353A (en) * 2007-10-26 2009-05-14 Renesas Technology Corp Manufacturing method of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5422777A (en) * 1977-07-22 1979-02-20 Hitachi Ltd Invertible processing device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5422777A (en) * 1977-07-22 1979-02-20 Hitachi Ltd Invertible processing device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5127984A (en) * 1991-05-02 1992-07-07 Avantek, Inc. Rapid wafer thinning process
KR100519963B1 (en) * 1998-04-08 2005-12-20 삼성전자주식회사 How to adjust LCD panel air knife device and air knife device
JP2008047637A (en) * 2006-08-11 2008-02-28 Fujikura Ltd Wafer wet processing method and wafer etching apparatus
JP2009105353A (en) * 2007-10-26 2009-05-14 Renesas Technology Corp Manufacturing method of semiconductor device

Similar Documents

Publication Publication Date Title
EP1055463B1 (en) Apparatus and method for plating a metal plating layer onto a surface of a seed layer of a wafer
US7743449B2 (en) System and method for a combined contact and non-contact wafer cleaning module
JPH0435901B2 (en)
US20020063169A1 (en) Wafer spray configurations for a single wafer processing apparatus
TWI760640B (en) Spray device and cleaning equipment
JPS61111546A (en) Semiconductor etching device
CA1042115A (en) Removal of projections on epitaxial layers
US6499333B1 (en) Calibration element for adjustment nozzle
US7007333B1 (en) System and method for a combined contact and non-contact wafer cleaning module
JP2007207973A (en) Surface treatment method and surface treatment device
KR101252967B1 (en) Substrate processing apparatus and method
JP2004079908A (en) Device and method for treating periphery of substrate
TWI276141B (en) Method of manufacturing an electronic device
JPH09171989A (en) Wet etching of semiconductor substrate
JPH0321224B2 (en)
KR200375036Y1 (en) Photo resist development apparatus
JPH0417334A (en) Wet treater of substrate
JP4023907B2 (en) Substrate processing method
JPS6320836A (en) Semiconductor manufacture equipment
JPS60238178A (en) Spray pattern apparatus
JPH04340226A (en) Method and device for etching semiconductor substrate
JPS57164985A (en) Surface treatment of substrate to be treated
JPS63211627A (en) Surface treatment lising chemical
JPH03295238A (en) Treater for substrate
JPS6269611A (en) Coating device