JPS61111521A - 縦型気相成長装置 - Google Patents

縦型気相成長装置

Info

Publication number
JPS61111521A
JPS61111521A JP17326385A JP17326385A JPS61111521A JP S61111521 A JPS61111521 A JP S61111521A JP 17326385 A JP17326385 A JP 17326385A JP 17326385 A JP17326385 A JP 17326385A JP S61111521 A JPS61111521 A JP S61111521A
Authority
JP
Japan
Prior art keywords
furnace
gas
vapor phase
growth
phase growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17326385A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6245690B2 (enrdf_load_stackoverflow
Inventor
Takatoshi Nakanishi
中西　隆敏
Tokuji Tanaka
篤司 田中
Takashi Udagawa
隆 宇田川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP17326385A priority Critical patent/JPS61111521A/ja
Publication of JPS61111521A publication Critical patent/JPS61111521A/ja
Publication of JPS6245690B2 publication Critical patent/JPS6245690B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP17326385A 1985-08-08 1985-08-08 縦型気相成長装置 Granted JPS61111521A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17326385A JPS61111521A (ja) 1985-08-08 1985-08-08 縦型気相成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17326385A JPS61111521A (ja) 1985-08-08 1985-08-08 縦型気相成長装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP7504979A Division JPS55167041A (en) 1978-07-31 1979-06-14 Vertical type gaseous phase growth device

Publications (2)

Publication Number Publication Date
JPS61111521A true JPS61111521A (ja) 1986-05-29
JPS6245690B2 JPS6245690B2 (enrdf_load_stackoverflow) 1987-09-28

Family

ID=15957203

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17326385A Granted JPS61111521A (ja) 1985-08-08 1985-08-08 縦型気相成長装置

Country Status (1)

Country Link
JP (1) JPS61111521A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100530477B1 (ko) * 1997-08-21 2006-03-09 도시바 기카이 가부시키가이샤 고속회전기상박막형성장치및그것을이용한고속회전기상박막형성방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100530477B1 (ko) * 1997-08-21 2006-03-09 도시바 기카이 가부시키가이샤 고속회전기상박막형성장치및그것을이용한고속회전기상박막형성방법

Also Published As

Publication number Publication date
JPS6245690B2 (enrdf_load_stackoverflow) 1987-09-28

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