JPS6110978B2 - - Google Patents

Info

Publication number
JPS6110978B2
JPS6110978B2 JP50043578A JP4357875A JPS6110978B2 JP S6110978 B2 JPS6110978 B2 JP S6110978B2 JP 50043578 A JP50043578 A JP 50043578A JP 4357875 A JP4357875 A JP 4357875A JP S6110978 B2 JPS6110978 B2 JP S6110978B2
Authority
JP
Japan
Prior art keywords
wiring
gate electrode
sides
polycrystalline silicon
wiring layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP50043578A
Other languages
English (en)
Japanese (ja)
Other versions
JPS51117878A (en
Inventor
Toshinori Ootsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP50043578A priority Critical patent/JPS51117878A/ja
Publication of JPS51117878A publication Critical patent/JPS51117878A/ja
Publication of JPS6110978B2 publication Critical patent/JPS6110978B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP50043578A 1975-04-09 1975-04-09 Manufacturing method of semiconductor device Granted JPS51117878A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50043578A JPS51117878A (en) 1975-04-09 1975-04-09 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50043578A JPS51117878A (en) 1975-04-09 1975-04-09 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS51117878A JPS51117878A (en) 1976-10-16
JPS6110978B2 true JPS6110978B2 (cs) 1986-04-01

Family

ID=12667629

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50043578A Granted JPS51117878A (en) 1975-04-09 1975-04-09 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS51117878A (cs)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5441085A (en) * 1977-09-07 1979-03-31 Nec Corp Insulated gate field effect semiconductor device
JPS581527Y2 (ja) * 1978-06-02 1983-01-12 株式会社クラレ 折板加工用三層複合建材

Also Published As

Publication number Publication date
JPS51117878A (en) 1976-10-16

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