JPS61103672A - Adhesion structure - Google Patents

Adhesion structure

Info

Publication number
JPS61103672A
JPS61103672A JP22587284A JP22587284A JPS61103672A JP S61103672 A JPS61103672 A JP S61103672A JP 22587284 A JP22587284 A JP 22587284A JP 22587284 A JP22587284 A JP 22587284A JP S61103672 A JPS61103672 A JP S61103672A
Authority
JP
Japan
Prior art keywords
solder
melting point
metal
inner layer
melted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22587284A
Other languages
Japanese (ja)
Inventor
Junichi Kanazawa
金沢 淳一
Takayuki Kakinuma
柿沼 孝之
Minoru Kakehi
筧 実
Hayao Mizushima
水島 速夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP22587284A priority Critical patent/JPS61103672A/en
Publication of JPS61103672A publication Critical patent/JPS61103672A/en
Pending legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00Soldering, e.g. brazing, or unsoldering
    • B23K1/19Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Products (AREA)

Abstract

PURPOSE:To elevate a reliability with absorbing a strain and with preventing the cracks of articles and the peeling of a connection part by connecting with heating with arranging the metal plate consisting of plural layers among the articles having different thermal expansions. CONSTITUTION:The forming solder 7 of the metallic plate of three layers structure pinching the solder 5 with a high melting point by a low melting point solder 6 is pinched between a solder plated radiator 1 and the ceramics substrate 2 with printed 4 electrode on its back face and heated at the temp. that the low melting point solder 6 is melted but high melting point solder 5 is not melted. Then due to one part of the high melting point solder 5 being melted but the majority being not melted according to a diffusion phenomenon the both 1, 2 are connected and the difference in the thermal expansions of the both 1, 2 cause by the temp. cycling is absorbed by the thickness of the solder. Even in case of the inner layer 5 of the metallic plate 7 being made of the metal having the thermal expansion coefficient which is larger than the ceramics substrate 2 but smaller than the radiating plate 1 the strain to be caused between the both 1, 2 is dispersed into the two of the substrate 2 and inner layer 5, and the inner layer 5 and radiator 1 and the similar effect as above is obtainable.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、成形ハンダを用いた熱膨張の異なる物品の接
着構造に関し、特に熱膨張の小さいセラミックを金属板
に接着するための成形ハンダの接着構造に関する。
Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a structure for bonding articles with different thermal expansions using molded solder, and in particular to a structure for bonding articles with different thermal expansion using molded solder. Regarding adhesive structure.

(従来の技術) 従来、ハイブリッドICを搭載したセラミック基板に放
熱体を取付ける場合は、特開昭58−116237に示
されているようにセラミンク基板の裏面に電極印刷をほ
どこし、この基板と放熱体との間に成形ハンダを挾み、
加熱して半田接着を行うものであった。
(Prior art) Conventionally, when attaching a heat sink to a ceramic substrate on which a hybrid IC is mounted, electrodes are printed on the back side of the ceramic substrate as shown in Japanese Patent Application Laid-Open No. 58-116237. Sandwich the molded solder between the
It was used to perform solder bonding by heating.

(発明が解決しようとする問題点) 第2図は、従来の半田接着構造を説明する図である。同
図に示した様に、放熱体1には熱伝導のよいアルミ合金
や、銅が使用されるが、これらは熱膨張係数が、大きく
、またセラミック基板2は熱膨張係数が、小さいため両
者を半田3によって接続した場合温度サイクルによって
、半田接続部が、剥れたシセラミック基板が割れるとい
う問題があったO (問題を解決する為の手段) 本発明は、熱膨張係数の異るセラミック基板と放熱体と
の間に加熱により接着するための金属板を配した接着構
造において、 前記金属板がn層(n層3)より成り、前記金属板の外
層がハンダにより構成され、前記金属板の内層が前記セ
ラミック基板と放熱体との間の接着部に発生する熱膨張
の異りによるひずみを吸収する金属により構成したもの
である。なお、前記ひずみを吸収する金属としては、外
層のハンダより高融点のハンダを用いたもの、又はセラ
ミック基板より大きく、放熱体より小さい熱膨張係数を
有した金属を用いる。
(Problems to be Solved by the Invention) FIG. 2 is a diagram illustrating a conventional solder bonding structure. As shown in the figure, aluminum alloy or copper with good thermal conductivity is used for the heat dissipation body 1, but these have a large coefficient of thermal expansion, and the ceramic substrate 2 has a small coefficient of thermal expansion, so both When connected by solder 3, there was a problem that the solder connection part peeled off and the ceramic board cracked due to the temperature cycle. In an adhesive structure in which a metal plate for bonding by heating is arranged between a substrate and a heat sink, the metal plate is made up of an n layer (n layer 3), an outer layer of the metal plate is made of solder, and the metal The inner layer of the plate is made of metal that absorbs strain caused by differences in thermal expansion occurring at the bond between the ceramic substrate and the heat sink. Note that as the metal for absorbing the strain, a solder having a higher melting point than the solder of the outer layer is used, or a metal having a coefficient of thermal expansion larger than that of the ceramic substrate and smaller than that of the heat sink is used.

(作用) 本発明の接着構造は、セラミック基板と放熱体との接着
を外層のハンダによって行ない、内層の金属によって熱
膨張の異りによるひずみを吸収する。内層に高融点ハン
ダを用いた場合は、接着の際に内層が溶融しないので、
十分厚いハンダ付けを行うことができ、このハンダの厚
みによってひずみを吸収する。また、内層にセラミック
基板より大きく、放熱体より小さい熱膨張係数を有した
金属を用いた場合には、各外層に発生するひずみを相対
的に吸収する。
(Function) In the bonding structure of the present invention, the ceramic substrate and the heat sink are bonded together by the solder in the outer layer, and the strain caused by the difference in thermal expansion is absorbed by the metal in the inner layer. If high melting point solder is used for the inner layer, the inner layer will not melt during bonding, so
A sufficiently thick solder can be applied, and the thickness of the solder absorbs the strain. Furthermore, when a metal having a coefficient of thermal expansion larger than that of the ceramic substrate and smaller than that of the heat sink is used for the inner layer, the strain generated in each outer layer is relatively absorbed.

(実施例) 第1図及び、第3図は、本発明実施例の構成を説明する
図である。同図に示した様に、半田メ。
(Embodiment) FIGS. 1 and 3 are diagrams illustrating the configuration of an embodiment of the present invention. As shown in the same figure, solder.

キされた放熱体1と裏面に電極印刷4されたセラミック
基板2との間に、高融点半田5を低融点半田6で挾んだ
3層構造の金属板である成形半田7を挾み、これを低融
点半田6は、溶融するが高融点半田5は、溶融しない温
度で加熱する。
A molded solder 7, which is a metal plate with a three-layer structure in which high melting point solder 5 is sandwiched between low melting point solder 6, is sandwiched between the heat dissipating body 1 and the ceramic substrate 2 with electrodes 4 printed on the back side. This is heated at a temperature that melts the low melting point solder 6 but does not melt the high melting point solder 5.

このようにすると拡散現象により、高融点半田5の一部
は溶融するがその大部分は、溶融しないため、放熱体1
とセラミック基板2は第3図のように接続され、半田の
厚さHは従来の半田接続に比べ十分厚くすることができ
る。このようにして、 、厚く半田接続した場合、温度
サイクルによって生じるセラミック基板と放熱体との熱
膨張量の差が半田の厚みKよって吸収されるため、セラ
ミック基板が割れたり半田接続面が剥がれるということ
はなくなる。なお、この場合、高融点半田と低融点半田
との温度差が小さいと高融点半田の全てが、融けてしま
うため、この差は、できるだけ大きいほうがよい。たと
えば低融点半田として融点183℃の共晶半田を使用す
る場合は、高融点半田には、融点309℃の高温半田な
どがよい。3層の半田の製造は半田ンートを所定の形に
成形するためのプレス工程で、半田シートを3枚重ねて
ブレスすることが望しい。このようにすると、3層の半
田が離れることもなく扱いが楽であるし、従来に比べて
も、はとんど工数の増大はない。次に、内層をセラミッ
ク基板より大きく、放熱板(通常、アルミニウムを用い
る。)より小さい熱膨張係数を有した金属とした場合に
ついて説明する。この場合は、セラミック基板とアルミ
ニウムの放熱板との間に生じるひずみをセラミック基板
と内層、内層と放熱板の2つに分散させることができる
ので、セラミック基板が割れたシ、半田接続面がはがれ
ることはなくなる。
In this case, a part of the high melting point solder 5 melts due to the diffusion phenomenon, but most of it does not melt, so the heat sink 1
and the ceramic substrate 2 are connected as shown in FIG. 3, and the solder thickness H can be made sufficiently thicker than in conventional solder connections. In this way, if a thick solder connection is made, the difference in thermal expansion between the ceramic board and the heat sink caused by temperature cycles will be absorbed by the solder thickness K, resulting in the ceramic board cracking or the solder connection surface peeling off. That will no longer be the case. In this case, if the temperature difference between the high melting point solder and the low melting point solder is small, all of the high melting point solder will melt, so it is better that this difference is as large as possible. For example, if eutectic solder with a melting point of 183° C. is used as the low melting point solder, high temperature solder with a melting point of 309° C. is preferable as the high melting point solder. The production of the three-layer solder is a pressing process for forming the solder pad into a predetermined shape, and it is desirable to stack three solder sheets and press them. In this way, the three layers of solder do not separate and are easy to handle, and the number of man-hours does not increase at all compared to the conventional method. Next, a case where the inner layer is made of a metal having a coefficient of thermal expansion larger than that of the ceramic substrate and smaller than that of the heat sink (usually made of aluminum) will be described. In this case, the strain that occurs between the ceramic board and the aluminum heat sink can be dispersed between the ceramic board and the inner layer, and the inner layer and the heat sink, so if the ceramic board breaks or the solder connection surface peels off, That will no longer be the case.

なお、セラミックの熱膨張係数は6X10’であり、ア
ルミニウムは23X10’であるので、内層に用いる金
属は画然膨張係数の間であればよい。望しくは、中間の
係数を有する金属、例えば純鉄を用いると効果が大きい
Incidentally, since the thermal expansion coefficient of ceramic is 6X10' and that of aluminum is 23X10', the metal used for the inner layer may have an expansion coefficient clearly within the range. Preferably, the use of a metal having an intermediate coefficient, such as pure iron, is highly effective.

(発明の効果) この発明は以上説明したように、熱膨張係数の異るセラ
ミック基板と放熱体を接続しても温度サイクルによって
、基板が割れたり、接続部が剥れることもなく装置の信
頼性が向上するという利点がある。
(Effects of the Invention) As explained above, the present invention ensures that even if a ceramic substrate with a different coefficient of thermal expansion and a heat sink are connected, the substrate will not crack or the connection will peel off due to temperature cycles, and the device will be reliable. It has the advantage of improving performance.

またこの発明は、セラミック基板と放熱体との組合せに
限らず、たとえば、セラミック基板と、これに搭載され
る電子部品との半田付けや、セラミック基板を装置のケ
ースに半田接続だより固定するような場合にも利用でき
る。
Furthermore, the present invention is not limited to the combination of a ceramic substrate and a heat sink, but can also be applied to, for example, soldering a ceramic substrate and electronic components mounted thereon, or fixing a ceramic substrate to a device case by soldering. It can also be used in cases where

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明実施例の説明図、第2図は従来技術を説
明する図、第3図は本発明実施例の説明図。 1・・・放熱体、2・・セラミ、り基板、5・・・高融
点半田、6・・・低融点半田。 特許出願人 沖電気工業株式会社 第1図 第3図 手続補正書(自発) 1、事件の表示 昭和59年特 許  願第225872号2、発明の名
称 接着構造 3 補正をする者 事件との関係       特 許 出 願 人任 所
(〒105)  東京都港区虎ノ門1丁目7番12号4
代理人 住 所(〒105)  東京都港区虎ノ門1丁目7蒼1
2号5、補正の対象 明細書中「発明の詳細な説明」の
欄6、補正の内容 1、 明細書第2頁第6行目に「従来、ハイブリッドI
Cを」とあるのを「従来、電子部品を」と補正する。 2、同省第5頁第7行目に「高温半田」とあるのを「高
融点半田」と補正する。
FIG. 1 is an explanatory diagram of an embodiment of the present invention, FIG. 2 is an explanatory diagram of a prior art, and FIG. 3 is an explanatory diagram of an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Heat sink, 2... Ceramic substrate, 5... High melting point solder, 6... Low melting point solder. Patent applicant: Oki Electric Industry Co., Ltd. Figure 1 Figure 3 Procedural amendment (voluntary) 1. Indication of the case 1982 Patent Application No. 225872 2. Name of the invention Adhesive structure 3. Person making the amendment Relationship with the case Patent application office (105) 1-7-12-4 Toranomon, Minato-ku, Tokyo
Agent Address (〒105) 1-7 Ao-1 Toranomon, Minato-ku, Tokyo
No. 2 No. 5, subject of amendment Column 6 of "Detailed Description of the Invention" in the specification, content of amendment 1, page 2, line 6 of the specification states that "Conventionally, Hybrid I
"C" should be corrected to "conventional electronic components." 2. On page 5, line 7 of the Ministry of Health, the phrase "high temperature solder" has been corrected to "high melting point solder."

Claims (3)

【特許請求の範囲】[Claims] (1)熱膨張係数の異る物品間に加熱により接着するた
めの金属板を配した接着構造において、前記金属板がn
層(n≧3)より成り、前記金属板の外層がハンダによ
り構成され、前記金属板の内層が前記物品間の接着部に
発生する熱膨張の異りによるひずみを吸収する金属によ
り構成されたことを特徴とする接着構造。
(1) In an adhesive structure in which a metal plate is arranged for bonding articles having different coefficients of thermal expansion by heating, the metal plate is n
(n≧3), the outer layer of the metal plate is made of solder, and the inner layer of the metal plate is made of a metal that absorbs strain due to differences in thermal expansion occurring at the bonded portion between the articles. Adhesive structure characterized by:
(2)前記ひずみを吸収する金属が、外層のハンダより
高融点のハンダで構成されたことを特徴とする特許請求
の範囲第1項記載の接着構造。
(2) The adhesive structure according to claim 1, wherein the strain-absorbing metal is made of solder having a higher melting point than the solder of the outer layer.
(3)前記ひずみを吸収する金属が、一方の前記物品よ
り大きく、他方の前記物品より小さい熱膨張係数を有し
た金属で構成されたことを特徴とする特許請求の範囲第
1項記載の接着構造。
(3) The adhesive according to claim 1, wherein the strain-absorbing metal is made of a metal having a coefficient of thermal expansion larger than that of one of the articles and smaller than that of the other article. structure.
JP22587284A 1984-10-29 1984-10-29 Adhesion structure Pending JPS61103672A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22587284A JPS61103672A (en) 1984-10-29 1984-10-29 Adhesion structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22587284A JPS61103672A (en) 1984-10-29 1984-10-29 Adhesion structure

Publications (1)

Publication Number Publication Date
JPS61103672A true JPS61103672A (en) 1986-05-22

Family

ID=16836171

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22587284A Pending JPS61103672A (en) 1984-10-29 1984-10-29 Adhesion structure

Country Status (1)

Country Link
JP (1) JPS61103672A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62288516A (en) * 1986-06-09 1987-12-15 Matsushita Electric Ind Co Ltd On vehicle map display apparatus
JPS62290158A (en) * 1986-06-09 1987-12-17 Ngk Spark Plug Co Ltd Junction structure of ceramic of loading section of semiconductor element
JPH01186299A (en) * 1988-01-20 1989-07-25 Furukawa Electric Co Ltd:The Method for straightening camber of soldered circuit board

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62288516A (en) * 1986-06-09 1987-12-15 Matsushita Electric Ind Co Ltd On vehicle map display apparatus
JPS62290158A (en) * 1986-06-09 1987-12-17 Ngk Spark Plug Co Ltd Junction structure of ceramic of loading section of semiconductor element
JPH0548953B2 (en) * 1986-06-09 1993-07-22 Ngk Spark Plug Co
JPH01186299A (en) * 1988-01-20 1989-07-25 Furukawa Electric Co Ltd:The Method for straightening camber of soldered circuit board

Similar Documents

Publication Publication Date Title
KR20130125321A (en) Manufacturing method for chiller
JPH04162756A (en) Semiconductor module
JP2006100640A (en) Ceramic circuit board and power semiconductor module using same
JP2002064169A (en) Heat radiating structure
JPH077810B2 (en) Semiconductor device
JPS61103672A (en) Adhesion structure
JP2001267475A (en) Mounting structure of semiconductor device and its mounting method
JPS62209843A (en) Housing of electronic circuit
JP3199028B2 (en) Semiconductor device and manufacturing method thereof
JP2004152971A (en) Ceramic circuit board with heat sink and its manufacturing method
JPH0831990A (en) Heat radiating fin
JP2000294699A (en) Insulative heat sink of semiconductor device and method of manufacturing the same
JP2503778B2 (en) Substrate for semiconductor device
JP2004152972A (en) Ceramic circuit board with heat sink and its manufacturing method
JPS6262545A (en) Chip carrier and manufacture thereof
JPH08222670A (en) Package for mounting semiconductor element
JP2001118970A (en) Joined body of ceramic layer and metal conductor layer
JPH04212277A (en) Method of connecting terminal to printed wiring board
JPH07130925A (en) Semiconductor device and its manufacture
JP2005285885A (en) Semiconductor device
CN215069474U (en) Planar metal foil high-power resistor
JP2503779B2 (en) Substrate for semiconductor device
JP2001135902A (en) Ceramic circuit board
JPH0744190B2 (en) Method for manufacturing power IC device
JP2986661B2 (en) Method for manufacturing semiconductor device