JPS61102056U

JPS61102056U -

Info

Publication number: JPS61102056U
Application number: JP18790584U
Authority: JP
Priority date: 1984-12-10
Filing date: 1984-12-10
Publication date: 1986-06-28

Description

[Brief explanation of the drawing]

第１図及び第２図は本考案の実施例を示す半導
体ペレツトの要部側断面図、第３図は正電出力の
定電圧ＩＣの等価回路を示す図面、第４図は第３
図ＩＣの一部を示すペレツトの要部側断面図、第
５図は第３図ＩＣの応用回路例を示す図面、第６
図は負電圧出力の定電圧ＩＣの等価回路を示す図
面、第７図は第６図ＩＣの一部を示すペレツトの
要部側断面図、第８図は第３図ＩＣと第６図ＩＣ
を用いた応用回路例を示す図面、第９図及び第１
０図は従来のＩＣが有する問題点を解決した回路
図を示す。１１……一導電型半導体サブストレート、１３
……反対導電型半導体層、１ａ，４……回路素子
、２，２′……入力電極、３，３′……出力電極
、１ａ……出力電圧制御部、２０……裏面電極、
２６，３２……第１のダイオード、２７，３３…
…第２のダイオード。 1 and 2 are side cross-sectional views of essential parts of a semiconductor pellet showing an embodiment of the present invention, FIG. 3 is a drawing showing an equivalent circuit of a constant voltage IC with positive current output, and FIG.
Figure 5 is a side sectional view of the main part of the pellet showing a part of the IC, Figure 5 is a drawing showing an example of an applied circuit of the IC in Figure 3,
The figure shows an equivalent circuit of a constant voltage IC with negative voltage output, Figure 7 is a sectional side view of the main part of a pellet showing a part of the IC in Figure 6, and Figure 8 is a diagram showing the IC in Figure 3 and the IC in Figure 6.
Figures 9 and 1 show examples of applied circuits using
Figure 0 shows a circuit diagram that solves the problems of conventional ICs. 11... one conductivity type semiconductor substrate, 13
... Opposite conductivity type semiconductor layer, 1a, 4 ... Circuit element, 2, 2' ... Input electrode, 3, 3' ... Output electrode, 1a ... Output voltage control section, 20 ... Back electrode,
26, 32...first diode, 27, 33...
...Second diode.

Claims

[Claims for Utility Model Registration] (1) A semiconductor layer of an opposite conductivity type is formed on a semiconductor substrate of one conductivity type, and a plurality of circuit elements including semiconductor circuit elements are formed within this semiconductor layer of an opposite conductivity type, and each circuit element In a semiconductor device having a semiconductor pellet having a plurality of circuits including an output voltage control section inserted in series between an input electrode and an output electrode, and having an electrode formed on the back surface of a semiconductor substrate, the semiconductor pellet has an input electrode and an output electrode. A semiconductor device characterized in that a first diode is formed between an electrode and an output electrode, and a second diode is formed between an output electrode and a substrate. (2) The first and second diodes have a cathode on the electrode side to which a high potential voltage is applied during normal operation.
2. The semiconductor device according to claim 1, wherein an anode is connected to an electrode side or a substrate side to which a low potential voltage is applied. (3) Claim 1 of the Utility Model Registration Claim characterized in that the first and second diodes have a lower rise voltage than diodes formed between the substrate and the opposite conductivity type layer. semiconductor devices.