JPS61101495A - ルチル単結晶の製造方法 - Google Patents
ルチル単結晶の製造方法Info
- Publication number
- JPS61101495A JPS61101495A JP22221384A JP22221384A JPS61101495A JP S61101495 A JPS61101495 A JP S61101495A JP 22221384 A JP22221384 A JP 22221384A JP 22221384 A JP22221384 A JP 22221384A JP S61101495 A JPS61101495 A JP S61101495A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- partial pressure
- single crystal
- oxygen partial
- crystals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims description 58
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 29
- 239000001301 oxygen Substances 0.000 claims description 29
- 229910052760 oxygen Inorganic materials 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 19
- 239000007789 gas Substances 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 5
- 239000000155 melt Substances 0.000 claims description 5
- -1 CO_2 or NOx Chemical compound 0.000 claims 1
- 238000000137 annealing Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- 229910021532 Calcite Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 230000002706 hydrostatic effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229930014626 natural product Natural products 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22221384A JPS61101495A (ja) | 1984-10-24 | 1984-10-24 | ルチル単結晶の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22221384A JPS61101495A (ja) | 1984-10-24 | 1984-10-24 | ルチル単結晶の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61101495A true JPS61101495A (ja) | 1986-05-20 |
| JPH025720B2 JPH025720B2 (enrdf_load_stackoverflow) | 1990-02-05 |
Family
ID=16778901
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22221384A Granted JPS61101495A (ja) | 1984-10-24 | 1984-10-24 | ルチル単結晶の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61101495A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2660940A1 (fr) * | 1990-04-16 | 1991-10-18 | Chichibu Cement Kk | Procede de fabrication d'un monocristal de rutile. |
| KR100414519B1 (ko) * | 2001-10-26 | 2004-01-13 | 학교법인 한양학원 | 고압산소 하에서의 루틸 단결정 성장방법 |
-
1984
- 1984-10-24 JP JP22221384A patent/JPS61101495A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2660940A1 (fr) * | 1990-04-16 | 1991-10-18 | Chichibu Cement Kk | Procede de fabrication d'un monocristal de rutile. |
| KR100414519B1 (ko) * | 2001-10-26 | 2004-01-13 | 학교법인 한양학원 | 고압산소 하에서의 루틸 단결정 성장방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH025720B2 (enrdf_load_stackoverflow) | 1990-02-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Bondar | Rare-earth silicates | |
| Itoh et al. | β-barium borate single crystal grown by a direct Czochralski method | |
| Nassau et al. | Strontium titanate: An index to the literature on properties and the growth of single crystals | |
| Földvári et al. | Growth and properties of Bi2TeO5 single crystals | |
| Korczak et al. | Liquid encapsulated Czochralski growth of silver thiogallate | |
| JPS6345198A (ja) | 多元系結晶の製造方法 | |
| JPWO2005054550A1 (ja) | 人工コランダム結晶 | |
| JPS61101495A (ja) | ルチル単結晶の製造方法 | |
| US5998313A (en) | Cesium-lithium borate crystal | |
| JP2012001381A (ja) | 単結晶基板および単結晶基板の製造方法 | |
| Wold et al. | Synthesis of oxides containing transition metals | |
| Markgraf et al. | Effect of starting components on the growth of PbMg13Nb23O3 | |
| Carter et al. | Growing single crystals | |
| Bruni | Gadolinium gallium garnet | |
| JP3207983B2 (ja) | Ｉ−ｉｉｉ−ｖｉ２族化合物単結晶の製造方法 | |
| CN1622409A (zh) | 用液相外延法生长氧化锌蓝紫光半导体 | |
| EP0786542A1 (en) | Cesium-lithium borate crystal | |
| Gannon et al. | Microstructures occurring in reduced vanadium dioxide | |
| JPS63274695A (ja) | 銅酸ランタン単結晶の製造方法 | |
| JP3021935B2 (ja) | カドミウムマンガンテルル単結晶の製造方法 | |
| JP3190038B2 (ja) | 磁気光学結晶膜用ガーネット結晶及びその製造方法 | |
| US4292119A (en) | Growth of single-crystal 2PbO.Fe2 O3 | |
| JPH0294608A (ja) | 酸化物ガーネット単結晶 | |
| Fukuda et al. | Single crystal growth of superconducting oxides and related compounds by the flux, floating zone and other methods | |
| JP3193440B2 (ja) | Ｉ−ｉｉｉ−ｖｉ２族半導体単結晶の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |