JPS61100978A - 放射線検出器及び製造方法 - Google Patents

放射線検出器及び製造方法

Info

Publication number
JPS61100978A
JPS61100978A JP59222695A JP22269584A JPS61100978A JP S61100978 A JPS61100978 A JP S61100978A JP 59222695 A JP59222695 A JP 59222695A JP 22269584 A JP22269584 A JP 22269584A JP S61100978 A JPS61100978 A JP S61100978A
Authority
JP
Japan
Prior art keywords
radiation detector
chemically etched
electrode
layer
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59222695A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0476234B2 (enExample
Inventor
Yuzo Ozaki
雄三 尾崎
Haruo Hosomatsu
細松　春夫
Morio Wada
守夫 和田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yokogawa Electric Corp
Original Assignee
Yokogawa Hokushin Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yokogawa Hokushin Electric Corp filed Critical Yokogawa Hokushin Electric Corp
Priority to JP59222695A priority Critical patent/JPS61100978A/ja
Publication of JPS61100978A publication Critical patent/JPS61100978A/ja
Publication of JPH0476234B2 publication Critical patent/JPH0476234B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier

Landscapes

  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP59222695A 1984-10-23 1984-10-23 放射線検出器及び製造方法 Granted JPS61100978A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59222695A JPS61100978A (ja) 1984-10-23 1984-10-23 放射線検出器及び製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59222695A JPS61100978A (ja) 1984-10-23 1984-10-23 放射線検出器及び製造方法

Publications (2)

Publication Number Publication Date
JPS61100978A true JPS61100978A (ja) 1986-05-19
JPH0476234B2 JPH0476234B2 (enExample) 1992-12-03

Family

ID=16786465

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59222695A Granted JPS61100978A (ja) 1984-10-23 1984-10-23 放射線検出器及び製造方法

Country Status (1)

Country Link
JP (1) JPS61100978A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6458254B2 (en) * 1997-09-25 2002-10-01 Midwest Research Institute Plasma & reactive ion etching to prepare ohmic contacts

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6458254B2 (en) * 1997-09-25 2002-10-01 Midwest Research Institute Plasma & reactive ion etching to prepare ohmic contacts

Also Published As

Publication number Publication date
JPH0476234B2 (enExample) 1992-12-03

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