JPS61100930A - 位置検出方法 - Google Patents

位置検出方法

Info

Publication number
JPS61100930A
JPS61100930A JP59222009A JP22200984A JPS61100930A JP S61100930 A JPS61100930 A JP S61100930A JP 59222009 A JP59222009 A JP 59222009A JP 22200984 A JP22200984 A JP 22200984A JP S61100930 A JPS61100930 A JP S61100930A
Authority
JP
Japan
Prior art keywords
objective lens
mask
detected
diffraction grating
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59222009A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0312451B2 (enExample
Inventor
Yoshihiro Yoneyama
米山　義弘
Yukio Kenbo
行雄 見坊
Tomohiro Kuji
久邇　朝宏
Ryuichi Funatsu
隆一 船津
Akira Inagaki
晃 稲垣
Minoru Ikeda
稔 池田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59222009A priority Critical patent/JPS61100930A/ja
Priority to US06/789,778 priority patent/US4708484A/en
Priority to DE8585113379T priority patent/DE3573326D1/de
Priority to EP85113379A priority patent/EP0179438B1/en
Priority to KR1019850007814A priority patent/KR900006773B1/ko
Publication of JPS61100930A publication Critical patent/JPS61100930A/ja
Publication of JPH0312451B2 publication Critical patent/JPH0312451B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
JP59222009A 1984-10-24 1984-10-24 位置検出方法 Granted JPS61100930A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP59222009A JPS61100930A (ja) 1984-10-24 1984-10-24 位置検出方法
US06/789,778 US4708484A (en) 1984-10-24 1985-10-21 Projection alignment method and apparatus
DE8585113379T DE3573326D1 (en) 1984-10-24 1985-10-22 A projection aligner of a lithographic system
EP85113379A EP0179438B1 (en) 1984-10-24 1985-10-22 A projection aligner of a lithographic system
KR1019850007814A KR900006773B1 (ko) 1984-10-24 1985-10-23 위치 검출방법 및 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59222009A JPS61100930A (ja) 1984-10-24 1984-10-24 位置検出方法

Publications (2)

Publication Number Publication Date
JPS61100930A true JPS61100930A (ja) 1986-05-19
JPH0312451B2 JPH0312451B2 (enExample) 1991-02-20

Family

ID=16775672

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59222009A Granted JPS61100930A (ja) 1984-10-24 1984-10-24 位置検出方法

Country Status (1)

Country Link
JP (1) JPS61100930A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011036838A1 (ja) * 2009-09-24 2011-03-31 株式会社日立ハイテクノロジーズ 欠陥検査方法及びその装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5128465A (en) * 1974-09-04 1976-03-10 Hitachi Ltd Kauntaomochiita noizusapuresuhoshiki
JPS5511330A (en) * 1978-07-08 1980-01-26 Shunpei Yamazaki Semiconductor device having continuous junction

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5128465A (en) * 1974-09-04 1976-03-10 Hitachi Ltd Kauntaomochiita noizusapuresuhoshiki
JPS5511330A (en) * 1978-07-08 1980-01-26 Shunpei Yamazaki Semiconductor device having continuous junction

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011036838A1 (ja) * 2009-09-24 2011-03-31 株式会社日立ハイテクノロジーズ 欠陥検査方法及びその装置
US8514388B2 (en) 2009-09-24 2013-08-20 Hitachi High-Technologies Corporation Flaw inspecting method and device therefor

Also Published As

Publication number Publication date
JPH0312451B2 (enExample) 1991-02-20

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