JPS6095886A - Method of producing thin film el panel - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed Description of the Invention] 11LL This invention provides EL (E 1ec
Regarding the improvement of the manufacturing method of thin III E, L panels using WiRtAEL elements exhibiting light emission (e.g.
PA is introduced to the manufacturing method of thin film E and L panels with an improved curved board bonding process.

Conventionally, for AC-operated thin-film El elements, a high electric field (approximately 106 V/am) is regularly applied to the light-emitting layer. 2 (to increase, 0.1-2.0 weight 11796 Mll, (
or CU, ΔII, Br, etc.) doped Zl
Semiconductor light emitting layer such as lS, Zn3e, Y2O, etc.

3Fl sandwiched between dielectric thin films such as i+o, etc.
ZnS:Mn (or Zllse: N4
n) Since the ELF element was developed, it has been confirmed that various optical characteristics have been improved. This thin film ELi device is IKI-(Z
It emits high-intensity light when an alternating current electric field is applied to it, and is characterized by its long life.

Also, regarding the light emission of this ELffi child, change the applied voltage ITE to W? It has been discovered that the process of increasing the voltage and the process of decreasing the voltage from the high voltage side have a hysteresis characteristic in which the luminance differs for the same applied voltage. r= In the process of increasing the voltage applied to the L element, when light, electric field, 15, etc. It is known that even if the light is removed and the light is returned to its original state, there is a possibility that bacteria will continue to grow in the state where the luminance is increased.

By making effective use of this memory phenomenon, [J9
Research in the local industry! i1 is in the process of being launched.

As an example of a thin film 1-element, the basic structure of a zns:~1n thin film EL element is shown in a front sectional view in FIG.

Referring to FIG. 1, on the glass substrate 1 are In2O, S
Transparent type t! made of materials such as nO. 05. TIO
2, 80-p O,, Sl s N, S10□l [Where? The warping first dielectric layer a is formed in an overlapping manner by a method such as spacing or electron beam evaporation. On the first dielectric layer 3, Z! Is: Mnn sintered benz 1
The ZIIS luminescence H4 obtained by electron beam evaporation is formed. At this time, Zn3 for vapor deposition: Mll
In the sintered pellets 1~, the active substance Mn is lIr! depending on the purpose. A bellet set to 1 is used.

A second rR'R layer 5 made of the same material as the first dielectric layer 3 is stacked on the ZnS light-emitting layer 4, and the upper surface of the second dielectric WI5 is coated with Au, etc. A back electrode 6 is formed by vapor deposition. Transparent! The pole 2 and the rear N pole 6 are arranged in directions orthogonal to each other and are connected to an AC power source 7 to drive the thin film element.

When an AC voltage is applied between the electrodes 2.6, the ZnS light emitting layer 4
The alternating current voltage is induced between the dielectrics M3 and 5 on both sides of the Zns, and therefore the electric field G generated in the Zns light skin 4 is excited and accelerated into conduction to obtain sufficient l energy. The electrons directly excite the Mn luminescent center, and when the excited Mn luminescent center returns to the ground state, it emits yellow light. When the electrons of the MO atoms that have entered the Zn site, which is the luminescent center, are excited, and the electrons fall to the ground state, strong light is emitted in a wide wavelength range of M with a peak of approximately 5,850. do.

The WI film EL element having the above 1f13￥1 can be used as a flat thin display device that takes advantage of the space factor, and can be used for computer output display terminal equipment and other various displays, including characters and graphics.
It can be used as a means of displaying symbols, still images, moving images, etc. This thin IRE [display device] has an electrode structure composed of the transparent electrode 2 and the back electrode 6 shown in FIG. In the matrix electrode structure consisting of the following, display is performed using the position where the transparent electrode 2 and the back electrode 6 intersect in plan view as one element of the display screen.

To explain based on FIG. 2, a first dielectric layer 3 and a ZnS light emitting layer 4 are sequentially laminated on transparent layers arranged in parallel at two constant pitches on a glass substrate 1.
Above is A superimposed on 516NllI and 5leN4 Eio.
Chu 20. ! A second dielectric layer 5 consisting of 11 and 11 is laminated in a two-layer structure, and furthermore, back electrodes 6 are arranged in parallel at a constant pitch in a direction perpendicular to the transparent electrode 2. is provided on the M electric body FH5, and the WI film'
An E element is constructed. In order to seal this thin film element, a □ back glass plate 11 is arranged to face the glass substrate 1 with a spacer 1o in between; glass substrate 1, spacer 1
0, and each joint of the back glass M'11 is coated with adhesive 12.
This is adhered and sealed to form an envelope for the 'thmE1 element. A thin film EL element is built into the envelope, and a thin film EL element such as licorice oil or vacuum grease is used.
A protective injection fluid 13 is filled and sealed. The conditions required for the injection fluid 13 are (1) permeability into pinholes, (2) high dielectric strength, (3) excellent heat resistance and moisture resistance, and (4) thin film E element. It is desirable to have a fluid quality that does not react with the constituent membranes and (5) has a low vapor pressure and coefficient of thermal expansion. It is required that the membrane does not react with the glue that makes up the EL element. The spacer 10 is provided with one or several micro injection holes 14 for injection of silicone or the like. In addition, the lead terminal portions 15 of the transparent electrode 2 and the back electrode 6, the glass substrate 1 and the back glass plate 11
One end thereof extends onto the glass substrate 1 outside the envelope through the joint portion, and is electrically connected to a drive control circuit (not shown).

FIG. 3 is a cross-sectional front view showing an example of a thin film EL panel.

In FIG. 3, transparent electrodes 2 are arranged parallel to each other in a band shape at a constant pitch on a glass substrate 1, and a film EL element 1 is arranged on a glass substrate 1.
6 are configured. A dish-shaped rear glass plate 17 is superimposed on the glass substrate 1 so as to accommodate the thin film E1 element 16, and the lff11EI- element is housed in the internal gap thereof. The joint between the glass substrate 'I and the rear glass plate 17 is sealed and bonded with an adhesive such as a photocurable resin or an epoxy resin. The back glass plate 17 is made of soda glass, silicate glass, or the like, and the housing portion of the EL element structure is recessed to a depth of about 1 mm by sand etching or the like.

Conventionally, when bonding the glass substrate 1 and the back glass plate 17, resin II! In order to make the thickness of 12 uniform and improve adhesion reliability, glass fiber, glass beads, alumina, etc. are mixed into the resin, and after applying this resin once, the glass substrate 1 and the back glass plate 17 are bonded together. , a method of forming a pressurized adhesive layer using a spring or the like was used. 4(Δ) and FIG. 4(B) show a schematic front view Ivi and a plan view for explaining the process of bonding the glass substrate 1 to the spine glass plate 17. Figure 4 (
As is clear from △), in this bonding process, a plurality of springs 19 are rearranged on the upper blade of the back glass plate 17, and the back glass plate 17 is pressed against the glass substrate 1 by the biasing force of the springs 19. be. However, in the conventional manufacturing method, the spring 19 is (
Since the springs 19 were evenly distributed on the upper surface of the 11-sided glass plate 17 (as shown by the + mark 1), the springs 19 were also arranged on the upper surface of the concave molded portion as shown by arrows X and Y. Therefore, when bonding, as shown in FIG. 4(C), the agonizing force of the spring 19 also moves on the upper surface of the central recess of the V-face glass plate 17, causing the rear glass plate 17 to become curved. As a result, there was a drawback that the thickness of the adhesive layer 12 could not be made uniform by 1η. Not only that, but when spring 19 is removed, the back
i Residual stress occurs within the glass handle 17 and the glass substrate 1,
As a result, there were drawbacks such as peeling of the resin in the adhesive layer 12 or cracks in the glass substrate 1 or rear glass plate 17.
Therefore, it is an object of the present invention to provide a method for manufacturing a panel made of a 2W membrane in which a light-transmitting front substrate (four sides) is firmly bonded.

11. To summarize, this invention includes a thin film E'L element and the
T, which stores the insulating protection and fluid that overlaps the element, becomes a1
In the manufacturing method of the membrane E L-panel, when bonding and sealing the back plate to the translucent front substrate, the translucent front substrate and the back plate are bonded together while applying pressure in the adhesion direction only to the contact area. This is a method for manufacturing a wI film EL panel, which is characterized by adhesion.

Other features of the invention will become clear from the following description of the embodiments.

Figures 5(A) and 5<8) are a schematic front cross-sectional view and a plan view for explaining one embodiment of the present invention, and are for explaining the prior art. 4(A) and 4(B) shown in FIG.

V in this example? The mold is present in the bonding process between the light-transmitting curved substrate and the back plate. first,. ,・The odor generator on the flow side also arranges multiple springs 19 above the back glass plate 17, and the spring 1
A biasing force of 9 is applied in the direction of adhesion between the back plate 17 and the glass substrate 1, thereby making the adhesion to the resin layer 12 more reliable.

In this regard, Fig. 4(A)e and Fig. 4<B
) i, :Yo, eh,. , :kawa8□1a. . .

However, in this embodiment, as is clear from FIG. 5(8), the plurality of springs 19 are arranged only above the adhesive portion of the rear glass plate 17 (in FIG. 5(B)). The part indicated by 2). However, multiple springs 19
Since the biasing force is applied only directly above the resin layer 12, the rear glass plate 17 no longer bends as shown in FIG. 4(C), and the thickness of the resin layer 12 can be made uniform. . Also after the plurality of springs 19 are removed.

The residual stress within the glass substrate 1 and the rear glass plate 17 can be dramatically reduced, and the reliability of adhesion in the resin layer 12 can be effectively improved.

The method for manufacturing a thin-film E panel according to the present invention is characterized by the step of bonding the glass substrate 1 and the back glass plate 17 as described above. It should be pointed out that for the other steps, any conventionally used method may be used.

As described above, according to the present invention, when a back plate is bonded to a translucent front substrate and sealed, pressure is applied only to the adhesive portion in the neck direction. Since the substrate and the back plate are bonded together, the thickness of the bonded portion can be made uniform, thereby making it possible to effectively improve the adhesive strength between the back plate and the substrate.

[Brief explanation of the drawing]

FIG. 1 is a front sectional view showing an example of a conventional thin film E1-element. FIG. 2 is a front sectional view showing an example of a conventional WI membrane El panel. FIG. 3 is a front sectional view of an M Pi E L panel to which an embodiment of the present invention is applied.
They are a schematic front sectional view, a plan view, and a front sectional view for explaining the manufacturing process of the t91r'tAEL panel. No.! Figures J<A) and (F3) are schematic cross-sections from one side [1di and a plan view are shown] for explaining an embodiment of the present invention. ) J-Las board, 16-
illlQ L: L Mf, +7 - -v side A 3° Patent applicant Sharp Corporation Figure 2z 3m

Claims (1)

[Claims] A thin I
I! A thin film containing an EL element and an insulating protective fluid for the EL element f; 1. A method for producing a Yu-membrane EL panel, characterized in that when sealing, the bonding is performed with pressure applied in the bonding direction only to the bonded portion.