JPS6094723A - 化合物半導体多層構造のエピタキシヤル気相成長方法及び装置 - Google Patents

化合物半導体多層構造のエピタキシヤル気相成長方法及び装置

Info

Publication number
JPS6094723A
JPS6094723A JP20098983A JP20098983A JPS6094723A JP S6094723 A JPS6094723 A JP S6094723A JP 20098983 A JP20098983 A JP 20098983A JP 20098983 A JP20098983 A JP 20098983A JP S6094723 A JPS6094723 A JP S6094723A
Authority
JP
Japan
Prior art keywords
growth
chamber
vapor phase
inert gas
phase growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20098983A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0562454B2 (enrdf_load_stackoverflow
Inventor
Yukio Noda
野田　行雄
Yukitoshi Kushiro
久代　行俊
Yuichi Matsushima
松島　裕一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KDDI Corp
Original Assignee
Kokusai Denshin Denwa KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Denshin Denwa KK filed Critical Kokusai Denshin Denwa KK
Priority to JP20098983A priority Critical patent/JPS6094723A/ja
Publication of JPS6094723A publication Critical patent/JPS6094723A/ja
Publication of JPH0562454B2 publication Critical patent/JPH0562454B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
JP20098983A 1983-10-28 1983-10-28 化合物半導体多層構造のエピタキシヤル気相成長方法及び装置 Granted JPS6094723A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20098983A JPS6094723A (ja) 1983-10-28 1983-10-28 化合物半導体多層構造のエピタキシヤル気相成長方法及び装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20098983A JPS6094723A (ja) 1983-10-28 1983-10-28 化合物半導体多層構造のエピタキシヤル気相成長方法及び装置

Publications (2)

Publication Number Publication Date
JPS6094723A true JPS6094723A (ja) 1985-05-27
JPH0562454B2 JPH0562454B2 (enrdf_load_stackoverflow) 1993-09-08

Family

ID=16433650

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20098983A Granted JPS6094723A (ja) 1983-10-28 1983-10-28 化合物半導体多層構造のエピタキシヤル気相成長方法及び装置

Country Status (1)

Country Link
JP (1) JPS6094723A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006132920A1 (en) * 2005-06-03 2006-12-14 Veeco Instruments, Inc. Method and apparatus for decreasing deposition time of a thin film

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5352356A (en) * 1976-10-25 1978-05-12 Hitachi Ltd Deposition prevention method in hot wall type reaction furnace

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5352356A (en) * 1976-10-25 1978-05-12 Hitachi Ltd Deposition prevention method in hot wall type reaction furnace

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006132920A1 (en) * 2005-06-03 2006-12-14 Veeco Instruments, Inc. Method and apparatus for decreasing deposition time of a thin film

Also Published As

Publication number Publication date
JPH0562454B2 (enrdf_load_stackoverflow) 1993-09-08

Similar Documents

Publication Publication Date Title
KR970008339B1 (ko) 화학증착에 의한 과포화 희토류 원소 도핑 반도체층
US5410167A (en) Semiconductor device with reduced side gate effect
US4239955A (en) Effusion cells for molecular beam epitaxy apparatus
EP0209150A2 (en) Apparatus of metal organic chemical vapor deposition for growing epitaxial layer of compound semiconductor
JPH06132236A (ja) 半導体装置の製造方法
Kukimoto et al. Selective area control of material properties in laser-assisted MOVPE of GaAs and AlGaAs
US3994755A (en) Liquid phase epitaxial process for growing semi-insulating GaAs layers
US5122482A (en) Method for treating surface of silicon
JPS6094723A (ja) 化合物半導体多層構造のエピタキシヤル気相成長方法及び装置
JP2002539327A (ja) 基板表面への金属酸化物の化学的気相成長法による成膜方法および装置
US4028147A (en) Liquid phase epitaxial process for growing semi-insulating GaAs layers
US7687798B2 (en) Epitaxy with compliant layers of group-V species
JP2642096B2 (ja) 化合物半導体薄膜の形成方法
JPH05145093A (ja) 半導体結晶への水銀拡散法
JP2656029B2 (ja) 結晶成長装置
GB2202236A (en) Manufacture of electronic devices comprising cadmium mercury telluride involving vapour phase deposition
KR100942146B1 (ko) 펄스 가스 유동 증착방법, 그 장치 및 이를 이용한에피택셜 웨이퍼의 제작 방법
Miyata et al. Intermittent ultraviolet irradiation for silicon selective epitaxial growth
KR20040070255A (ko) 비 ⅲ-ⅴ 기판상의 ⅲ-ⅴ 반도체층 증착방법
JPH04252023A (ja) シリコン結晶の選択的成長方法
JPH02166729A (ja) 金属の堆積方法
JPS58134478A (ja) 化合物半導体ｆｅｔの製造方法
JPH03195016A (ja) Ｓｉ基板の熱清浄化法及びエピタキシャル成長及び熱処理装置
Yew et al. High structural quality epi/oxide boundaries of selective epitaxy grown by SiH4/H2 chemical vapor deposition using growth‐sputter cycles
JP4138143B2 (ja) 放射線検出素子