JPS6093820A - スイツチ回路 - Google Patents

スイツチ回路

Info

Publication number
JPS6093820A
JPS6093820A JP20089283A JP20089283A JPS6093820A JP S6093820 A JPS6093820 A JP S6093820A JP 20089283 A JP20089283 A JP 20089283A JP 20089283 A JP20089283 A JP 20089283A JP S6093820 A JPS6093820 A JP S6093820A
Authority
JP
Japan
Prior art keywords
mosfet
source
gate
series
switch circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20089283A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0256856B2 (enrdf_load_stackoverflow
Inventor
Kiichi Tokunaga
徳永紀一
Hiroshi Fukui
宏 福井
Kozo Watanabe
渡辺 晃造
Hisao Amano
天野 比佐雄
Masayoshi Sato
正好 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP20089283A priority Critical patent/JPS6093820A/ja
Priority to EP84112922A priority patent/EP0140349B1/en
Priority to DE8484112922T priority patent/DE3485409D1/de
Priority to US06/665,132 priority patent/US4692643A/en
Publication of JPS6093820A publication Critical patent/JPS6093820A/ja
Publication of JPH0256856B2 publication Critical patent/JPH0256856B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10Modifications for increasing the maximum permissible switched voltage
    • H03K17/102Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches

Landscapes

  • Electronic Switches (AREA)
JP20089283A 1983-10-28 1983-10-28 スイツチ回路 Granted JPS6093820A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP20089283A JPS6093820A (ja) 1983-10-28 1983-10-28 スイツチ回路
EP84112922A EP0140349B1 (en) 1983-10-28 1984-10-26 Semiconductor switching device
DE8484112922T DE3485409D1 (de) 1983-10-28 1984-10-26 Halbleiterschaltvorrichtung.
US06/665,132 US4692643A (en) 1983-10-28 1984-10-26 Semiconductor switching device having plural MOSFET's, GTO's or the like connected in series

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20089283A JPS6093820A (ja) 1983-10-28 1983-10-28 スイツチ回路

Publications (2)

Publication Number Publication Date
JPS6093820A true JPS6093820A (ja) 1985-05-25
JPH0256856B2 JPH0256856B2 (enrdf_load_stackoverflow) 1990-12-03

Family

ID=16431983

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20089283A Granted JPS6093820A (ja) 1983-10-28 1983-10-28 スイツチ回路

Country Status (1)

Country Link
JP (1) JPS6093820A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01321723A (ja) * 1988-06-23 1989-12-27 Mitsubishi Electric Corp Fet直列回路
JPH06169242A (ja) * 1992-11-30 1994-06-14 Toshiba Corp ドライバ回路
JPH07115000A (ja) * 1993-10-14 1995-05-02 Agency Of Ind Science & Technol 荷電粒子パルスビーム発生装置
DE102006037336B3 (de) * 2006-08-10 2008-02-07 Semikron Elektronik Gmbh & Co. Kg Levelshifter für eine Ansteuerschaltung für Leistungshalbleiterbauelemente
WO2013151011A1 (ja) * 2012-04-04 2013-10-10 株式会社 日立ハイテクノロジーズ スイッチ回路、質量分析装置及びスイッチ回路の制御方法
JP2015513782A (ja) * 2012-01-31 2015-05-14 インフィネオン テクノロジーズ ドレスデン ゲーエムベーハー アクティブドリフトゾーンを有する半導体配置
US10615682B2 (en) 2015-09-18 2020-04-07 Aisin Aw Co., Ltd. Electrically driven vehicle inverter device
JP2021078106A (ja) * 2019-10-31 2021-05-20 パナソニックIpマネジメント株式会社 スイッチ回路および撮像装置

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01321723A (ja) * 1988-06-23 1989-12-27 Mitsubishi Electric Corp Fet直列回路
JPH06169242A (ja) * 1992-11-30 1994-06-14 Toshiba Corp ドライバ回路
JPH07115000A (ja) * 1993-10-14 1995-05-02 Agency Of Ind Science & Technol 荷電粒子パルスビーム発生装置
DE102006037336B3 (de) * 2006-08-10 2008-02-07 Semikron Elektronik Gmbh & Co. Kg Levelshifter für eine Ansteuerschaltung für Leistungshalbleiterbauelemente
JP2015513782A (ja) * 2012-01-31 2015-05-14 インフィネオン テクノロジーズ ドレスデン ゲーエムベーハー アクティブドリフトゾーンを有する半導体配置
JP2016201547A (ja) * 2012-01-31 2016-12-01 インフィネオン テクノロジーズ ドレスデン ゲーエムベーハー アクティブドリフトゾーンを有する半導体配置
US9530764B2 (en) 2012-01-31 2016-12-27 Infineon Technologies Dresden Gmbh Semiconductor arrangement with active drift zone
WO2013151011A1 (ja) * 2012-04-04 2013-10-10 株式会社 日立ハイテクノロジーズ スイッチ回路、質量分析装置及びスイッチ回路の制御方法
JP2013219428A (ja) * 2012-04-04 2013-10-24 Hitachi High-Technologies Corp スイッチ回路、質量分析装置及びスイッチ回路の制御方法
US9337822B2 (en) 2012-04-04 2016-05-10 Hitachi High-Technologies Corporation Switch circuit, mass spectrometer, and control method for switch circuit
US10615682B2 (en) 2015-09-18 2020-04-07 Aisin Aw Co., Ltd. Electrically driven vehicle inverter device
JP2021078106A (ja) * 2019-10-31 2021-05-20 パナソニックIpマネジメント株式会社 スイッチ回路および撮像装置

Also Published As

Publication number Publication date
JPH0256856B2 (enrdf_load_stackoverflow) 1990-12-03

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