JPS6090893A - 単結晶性酸化物薄膜の製造方法 - Google Patents
単結晶性酸化物薄膜の製造方法Info
- Publication number
- JPS6090893A JPS6090893A JP58197517A JP19751783A JPS6090893A JP S6090893 A JPS6090893 A JP S6090893A JP 58197517 A JP58197517 A JP 58197517A JP 19751783 A JP19751783 A JP 19751783A JP S6090893 A JPS6090893 A JP S6090893A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- oxide
- target
- sputtering
- single crystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/32—Titanates; Germanates; Molybdates; Tungstates
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58197517A JPS6090893A (ja) | 1983-10-24 | 1983-10-24 | 単結晶性酸化物薄膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58197517A JPS6090893A (ja) | 1983-10-24 | 1983-10-24 | 単結晶性酸化物薄膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6090893A true JPS6090893A (ja) | 1985-05-22 |
| JPS6253480B2 JPS6253480B2 (OSRAM) | 1987-11-10 |
Family
ID=16375777
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58197517A Granted JPS6090893A (ja) | 1983-10-24 | 1983-10-24 | 単結晶性酸化物薄膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6090893A (OSRAM) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63296001A (ja) * | 1987-05-28 | 1988-12-02 | Toshinori Takagi | 光学結晶性膜 |
| JP2003045527A (ja) * | 2001-07-26 | 2003-02-14 | Kyocera Elco Corp | Fpc/ffc用コネクタ |
-
1983
- 1983-10-24 JP JP58197517A patent/JPS6090893A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63296001A (ja) * | 1987-05-28 | 1988-12-02 | Toshinori Takagi | 光学結晶性膜 |
| JP2003045527A (ja) * | 2001-07-26 | 2003-02-14 | Kyocera Elco Corp | Fpc/ffc用コネクタ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6253480B2 (OSRAM) | 1987-11-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH08253324A (ja) | 強誘電体薄膜構成体 | |
| JPS6090893A (ja) | 単結晶性酸化物薄膜の製造方法 | |
| JPS6096599A (ja) | 酸化物超伝導体薄膜の製造方法 | |
| JP2834355B2 (ja) | 強誘電体薄膜構成体の製造方法 | |
| JP3500787B2 (ja) | ビスマス化合物の製造方法とビスマス化合物の誘電体物質 | |
| JP3164849B2 (ja) | ジルコン酸チタン酸鉛薄膜の製造方法 | |
| JPH09208394A (ja) | 強誘電体薄膜及び強誘電体薄膜コンデンサの製造方法 | |
| JPH053439B2 (OSRAM) | ||
| JP2583882B2 (ja) | 配向性ペロブスカイト型化合物積層膜 | |
| JPS6091504A (ja) | 導電性酸化物薄膜の製造方法 | |
| JPH05147933A (ja) | アモルフアス強誘電体酸化物材料及びその製造方法 | |
| JPH0517139A (ja) | アモルフアス強誘電体酸化物材料及びその製造方法 | |
| JPH0781183B2 (ja) | 配向性金属薄膜の製造方法 | |
| JPH02124717A (ja) | 酸化物超伝導体 | |
| JPH05139730A (ja) | アモルフアス強誘電体酸化物材料及びその製造方法 | |
| JPH02196006A (ja) | 超伝導薄膜の作成方法 | |
| JPH05105431A (ja) | アモルフアス強誘電体酸化物材料及びその製造方法 | |
| JPH0647519B2 (ja) | 配向膜の製造方法 | |
| JPH05114309A (ja) | アモルフアス強誘電体酸化物材料及びその製造方法 | |
| WO2004059753A1 (ja) | 酸化物超電導薄膜 | |
| JPH05105430A (ja) | アモルフアス強誘電体酸化物材料及びその製造方法 | |
| JPH05105446A (ja) | アモルフアス強誘電体酸化物材料及びその製造方法 | |
| JPH05105432A (ja) | アモルフアス強誘電体酸化物材料及びその製造方法 | |
| JPH05132314A (ja) | アモルフアス強誘電体酸化物材料及びその製造方法 | |
| JPH05147936A (ja) | アモルフアス強誘電体酸化物材料及びその製造方法 |