JPS6089967A - 光電変換素子 - Google Patents

光電変換素子

Info

Publication number
JPS6089967A
JPS6089967A JP58198711A JP19871183A JPS6089967A JP S6089967 A JPS6089967 A JP S6089967A JP 58198711 A JP58198711 A JP 58198711A JP 19871183 A JP19871183 A JP 19871183A JP S6089967 A JPS6089967 A JP S6089967A
Authority
JP
Japan
Prior art keywords
film
layer
light
photoelectric conversion
silicon substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58198711A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0449787B2 (enrdf_load_stackoverflow
Inventor
Tetsuo Kumezawa
粂沢　哲郎
Takashi Noguchi
隆 野口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP58198711A priority Critical patent/JPS6089967A/ja
Publication of JPS6089967A publication Critical patent/JPS6089967A/ja
Publication of JPH0449787B2 publication Critical patent/JPH0449787B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP58198711A 1983-10-24 1983-10-24 光電変換素子 Granted JPS6089967A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58198711A JPS6089967A (ja) 1983-10-24 1983-10-24 光電変換素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58198711A JPS6089967A (ja) 1983-10-24 1983-10-24 光電変換素子

Publications (2)

Publication Number Publication Date
JPS6089967A true JPS6089967A (ja) 1985-05-20
JPH0449787B2 JPH0449787B2 (enrdf_load_stackoverflow) 1992-08-12

Family

ID=16395736

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58198711A Granted JPS6089967A (ja) 1983-10-24 1983-10-24 光電変換素子

Country Status (1)

Country Link
JP (1) JPS6089967A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62239575A (ja) * 1986-04-11 1987-10-20 Fujitsu Ltd 固体撮像装置
JPS6420654A (en) * 1987-07-15 1989-01-24 Toshiba Corp Solid-state image sensing device and manufacture thereof
JPH01143345A (ja) * 1987-11-30 1989-06-05 Hamamatsu Photonics Kk 半導体集積回路装置
JPH06244400A (ja) * 1993-02-15 1994-09-02 Nec Corp 固体撮像装置
US5349216A (en) * 1992-06-12 1994-09-20 Gold Star Electron Co., Ltd. Charge coupled device image sensor
FR2705495A1 (fr) * 1993-05-18 1994-11-25 Samsung Electronics Co Ltd Dispositif de prise d'image à semiconducteur de type CCD ayant une structure à drain de débordement.

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62239575A (ja) * 1986-04-11 1987-10-20 Fujitsu Ltd 固体撮像装置
JPS6420654A (en) * 1987-07-15 1989-01-24 Toshiba Corp Solid-state image sensing device and manufacture thereof
JPH01143345A (ja) * 1987-11-30 1989-06-05 Hamamatsu Photonics Kk 半導体集積回路装置
US5349216A (en) * 1992-06-12 1994-09-20 Gold Star Electron Co., Ltd. Charge coupled device image sensor
US5371033A (en) * 1992-06-12 1994-12-06 Gold Star Electron Co. Method of making charge coupled device image sensor
JPH06244400A (ja) * 1993-02-15 1994-09-02 Nec Corp 固体撮像装置
FR2705495A1 (fr) * 1993-05-18 1994-11-25 Samsung Electronics Co Ltd Dispositif de prise d'image à semiconducteur de type CCD ayant une structure à drain de débordement.

Also Published As

Publication number Publication date
JPH0449787B2 (enrdf_load_stackoverflow) 1992-08-12

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